中文
English
STH7NA80-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction:
**STH7NA80-VB** is a single N-channel MOSFET in TO247 package with a high drain-source withstand voltage (VDS) of 850V, suitable for high voltage and high current switching applications. Its maximum drain current (ID) is 10A, and it has a high on-resistance (RDS(ON)) of 1150mΩ@VGS=10V, suitable for use in power switches, inverters, power management and other fields. **STH7NA80-VB** is manufactured using **Plannar** technology, can operate under high voltage and high current conditions, and has good switching performance. This MOSFET is particularly suitable for application scenarios that require high withstand voltage, stability and high on-current capability.
**STH7NA80-VB** is a single N-channel MOSFET in TO247 package with a high drain-source withstand voltage (VDS) of 850V, suitable for high voltage and high current switching applications. Its maximum drain current (ID) is 10A, and it has a high on-resistance (RDS(ON)) of 1150mΩ@VGS=10V, suitable for use in power switches, inverters, power management and other fields. **STH7NA80-VB** is manufactured using **Plannar** technology, can operate under high voltage and high current conditions, and has good switching performance. This MOSFET is particularly suitable for application scenarios that require high withstand voltage, stability and high on-current capability.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 850V | 3.3V | 10A | 1150mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 850V | 3.3V | 10A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 850V | 3.3V | 10A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. Detailed parameter description:
- **Package type**: TO247
- **Configuration**: Single N-channel MOSFET
- **Drain-source withstand voltage (VDS)**: 850V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.3V
- **On-resistance (RDS(ON))**:
- 1150mΩ (at VGS = 10V)
- **Maximum drain current (ID)**: 10A
- **Maximum power loss**: Approx. 50W (depending on application and operating conditions)
- **Technology**: Plannar
- **Maximum gate-source voltage (VGS(max))**: ±30V
- **Operating temperature range**: -55°C to +150°C
- **Typical switching time**: Slow, suitable for medium and low frequency switching applications
- **Gate charge**: Typical gate charge is about 160nC (VDS = 400V, ID = 10A, VGS = 10V)
- **Package type**: TO247
- **Configuration**: Single N-channel MOSFET
- **Drain-source withstand voltage (VDS)**: 850V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.3V
- **On-resistance (RDS(ON))**:
- 1150mΩ (at VGS = 10V)
- **Maximum drain current (ID)**: 10A
- **Maximum power loss**: Approx. 50W (depending on application and operating conditions)
- **Technology**: Plannar
- **Maximum gate-source voltage (VGS(max))**: ±30V
- **Operating temperature range**: -55°C to +150°C
- **Typical switching time**: Slow, suitable for medium and low frequency switching applications
- **Gate charge**: Typical gate charge is about 160nC (VDS = 400V, ID = 10A, VGS = 10V)
Domain and module applications：
3. Applications and modules:
The high withstand voltage, high on-resistance and medium current carrying capacity of the **STH7NA80-VB** make it suitable for applications requiring medium to high voltage and medium power. The following are typical applications of this MOSFET:
- **Power conversion applications**:
Due to its high withstand voltage of 850V, the **STH7NA80-VB** is particularly suitable for AC-DC and DC-DC power converters. In these applications, MOSFETs are used as high-voltage switching elements to effectively convert voltage and regulate current to ensure high efficiency and reliability of the system. It is widely used in power adapters, DC power supplies and power conversion modules.
- **Industrial power supplies and inverters**:
This MOSFET is very suitable for use in industrial inverters and power management modules, especially in high voltage output applications. It can provide efficient power conversion in inverter applications and is particularly suitable for medium voltage inverter systems that require 850V withstand voltage.
- **Power Tools and Battery Management Systems (BMS)**:
In power tools or battery management systems (BMS), **STH7NA80-VB** can be used as a battery charging and discharging control switch. Due to its good thermal stability and high current carrying capacity, this MOSFET can effectively control the battery charging process and ensure the safety and service life of the battery.
- **LED Lighting Driver**:
Due to its good switching performance, **STH7NA80-VB** is also very useful in LED driver power supplies. It can be used as a high-voltage switching element to stably control the LED drive current and ensure that the light source emits light stably, which is particularly suitable for commercial and industrial lighting fields.
- **Power Factor Correction (PFC) Circuit**:
In the power factor correction circuit (PFC), **STH7NA80-VB** is used as a switching element to improve power efficiency and reduce harmonic distortion. In PFC circuits that require high voltage tolerance, MOSFET can effectively improve the quality of the power grid and the efficiency of power use, and is particularly suitable for large UPS and power electrical equipment.
- **Welding and Power Electronics Modules**:
In power electronics modules, **STH7NA80-VB** is used for high power conversion, suitable for welding equipment and high power modules. It can provide reliable switching operation in the power circuit, help the equipment achieve efficient power control, reduce losses and improve electrical performance.
The high withstand voltage, high on-resistance and medium current carrying capacity of the **STH7NA80-VB** make it suitable for applications requiring medium to high voltage and medium power. The following are typical applications of this MOSFET:
- **Power conversion applications**:
Due to its high withstand voltage of 850V, the **STH7NA80-VB** is particularly suitable for AC-DC and DC-DC power converters. In these applications, MOSFETs are used as high-voltage switching elements to effectively convert voltage and regulate current to ensure high efficiency and reliability of the system. It is widely used in power adapters, DC power supplies and power conversion modules.
- **Industrial power supplies and inverters**:
This MOSFET is very suitable for use in industrial inverters and power management modules, especially in high voltage output applications. It can provide efficient power conversion in inverter applications and is particularly suitable for medium voltage inverter systems that require 850V withstand voltage.
- **Power Tools and Battery Management Systems (BMS)**:
In power tools or battery management systems (BMS), **STH7NA80-VB** can be used as a battery charging and discharging control switch. Due to its good thermal stability and high current carrying capacity, this MOSFET can effectively control the battery charging process and ensure the safety and service life of the battery.
- **LED Lighting Driver**:
Due to its good switching performance, **STH7NA80-VB** is also very useful in LED driver power supplies. It can be used as a high-voltage switching element to stably control the LED drive current and ensure that the light source emits light stably, which is particularly suitable for commercial and industrial lighting fields.
- **Power Factor Correction (PFC) Circuit**:
In the power factor correction circuit (PFC), **STH7NA80-VB** is used as a switching element to improve power efficiency and reduce harmonic distortion. In PFC circuits that require high voltage tolerance, MOSFET can effectively improve the quality of the power grid and the efficiency of power use, and is particularly suitable for large UPS and power electrical equipment.
- **Welding and Power Electronics Modules**:
In power electronics modules, **STH7NA80-VB** is used for high power conversion, suitable for welding equipment and high power modules. It can provide reliable switching operation in the power circuit, help the equipment achieve efficient power control, reduce losses and improve electrical performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
