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STH60N10-VB Product details
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STH60N10-VB MOSFET Product Introduction
**STH60N10-VB** is a high-performance single N-channel MOSFET in a TO-247 package, suitable for applications requiring high current drive and low on-resistance. Its operating voltage (VDS) is 100V and its maximum gate-source voltage (VGS) is ±20V. This MOSFET uses advanced Trench technology, has extremely low on-resistance (RDS(ON) = 18mΩ@VGS=10V), and has a high continuous leakage current (ID = 72A), which makes it perform well in high-efficiency and high-power applications. Its efficient switching performance and low conduction loss make it widely used in various high-efficiency power supplies, power conversion and electric vehicle applications.
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**STH60N10-VB** is a high-performance single N-channel MOSFET in a TO-247 package, suitable for applications requiring high current drive and low on-resistance. Its operating voltage (VDS) is 100V and its maximum gate-source voltage (VGS) is ±20V. This MOSFET uses advanced Trench technology, has extremely low on-resistance (RDS(ON) = 18mΩ@VGS=10V), and has a high continuous leakage current (ID = 72A), which makes it perform well in high-efficiency and high-power applications. Its efficient switching performance and low conduction loss make it widely used in various high-efficiency power supplies, power conversion and electric vehicle applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 1.8V | 72A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 1.8V | 72A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 1.8V | 72A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: STH60N10-VB
- **Package**: TO-247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 18mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 72A
- **Switch technology**: Trench technology
- **Maximum power dissipation**: 150W
- **Gate charge (Qg)**: 85nC
- **Switching time (tR/tF)**: 50ns / 40ns
- **Maximum junction temperature (TJ)**: 150°C
The low on-resistance and high current carrying capability of this MOSFET make it an excellent performer in high-efficiency power conversion, which can significantly reduce energy losses and is suitable for applications requiring stringent power management and high power density.
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- **Model**: STH60N10-VB
- **Package**: TO-247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 18mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 72A
- **Switch technology**: Trench technology
- **Maximum power dissipation**: 150W
- **Gate charge (Qg)**: 85nC
- **Switching time (tR/tF)**: 50ns / 40ns
- **Maximum junction temperature (TJ)**: 150°C
The low on-resistance and high current carrying capability of this MOSFET make it an excellent performer in high-efficiency power conversion, which can significantly reduce energy losses and is suitable for applications requiring stringent power management and high power density.
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Domain and module applications：
Applications and module examples
1. **DC-DC converter**:
The low on-resistance of the STH60N10-VB makes it ideal in DC-DC converters, significantly reducing energy losses and improving conversion efficiency. It can be used as a main switching element to support high-efficiency power conversion, especially in communication equipment and industrial power modules.
2. **Electric Vehicle (EV) Battery Management System**:
Due to its high current carrying capacity (72A), the STH60N10-VB is well suited for battery management systems (BMS) in electric vehicles (EVs), where it provides efficient current transfer during battery charging and discharging, and good switching performance in battery protection circuits.
3. **High-frequency switching power supply (SMPS)**:
In a switching power supply (SMPS), the STH60N10-VB provides efficient switching performance for applications that require fast switching and low conduction losses. This MOSFET performs well in AC-DC conversion modules and is suitable for use in TVs, power adapters, computer power supplies, and power factor correction (PFC) modules.
4. **Motor Drive and Control**:
In motor control systems, the STH60N10-VB is able to provide smooth current output and is particularly suitable for high-power switching applications in motor drives. Its high current carrying capacity and low switching losses can improve drive efficiency and extend the life of the motor.
5. **Inverter and Renewable Energy Systems**:
The STH60N10-VB is also suitable for inverters and solar power generation systems, especially when converting DC to AC power. The high efficiency of the MOSFET can reduce energy losses in the system, improve overall system efficiency, and extend service life.
Through these applications, the STH60N10-VB is able to perform well in multiple fields and modules, and is particularly suitable for use in modern applications such as efficient power conversion, energy management, and electric vehicles.
1. **DC-DC converter**:
The low on-resistance of the STH60N10-VB makes it ideal in DC-DC converters, significantly reducing energy losses and improving conversion efficiency. It can be used as a main switching element to support high-efficiency power conversion, especially in communication equipment and industrial power modules.
2. **Electric Vehicle (EV) Battery Management System**:
Due to its high current carrying capacity (72A), the STH60N10-VB is well suited for battery management systems (BMS) in electric vehicles (EVs), where it provides efficient current transfer during battery charging and discharging, and good switching performance in battery protection circuits.
3. **High-frequency switching power supply (SMPS)**:
In a switching power supply (SMPS), the STH60N10-VB provides efficient switching performance for applications that require fast switching and low conduction losses. This MOSFET performs well in AC-DC conversion modules and is suitable for use in TVs, power adapters, computer power supplies, and power factor correction (PFC) modules.
4. **Motor Drive and Control**:
In motor control systems, the STH60N10-VB is able to provide smooth current output and is particularly suitable for high-power switching applications in motor drives. Its high current carrying capacity and low switching losses can improve drive efficiency and extend the life of the motor.
5. **Inverter and Renewable Energy Systems**:
The STH60N10-VB is also suitable for inverters and solar power generation systems, especially when converting DC to AC power. The high efficiency of the MOSFET can reduce energy losses in the system, improve overall system efficiency, and extend service life.
Through these applications, the STH60N10-VB is able to perform well in multiple fields and modules, and is particularly suitable for use in modern applications such as efficient power conversion, energy management, and electric vehicles.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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