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STH4N90-VB Product details
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1. STH4N90-VB Product Introduction
STH4N90-VB is a single N-channel MOSFET in TO247 package, designed for high-voltage power switching and power management. The maximum drain-source voltage (VDS) of the device is 900V, which is suitable for medium and high voltage power applications. Its maximum drain current (ID) is 5A, which is suitable for carrying moderate current loads. The on-resistance (RDS(ON)) of STH4N90-VB is 1500mΩ @ VGS=10V. Although the on-resistance is relatively high, the device can still meet general power switching requirements. The use of SJ_Multi-EPI technology ensures good performance and low switching losses. It is widely used in high-voltage power management systems, inverters, power converters and other fields, providing reliable performance and efficiency.
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STH4N90-VB is a single N-channel MOSFET in TO247 package, designed for high-voltage power switching and power management. The maximum drain-source voltage (VDS) of the device is 900V, which is suitable for medium and high voltage power applications. Its maximum drain current (ID) is 5A, which is suitable for carrying moderate current loads. The on-resistance (RDS(ON)) of STH4N90-VB is 1500mΩ @ VGS=10V. Although the on-resistance is relatively high, the device can still meet general power switching requirements. The use of SJ_Multi-EPI technology ensures good performance and low switching losses. It is widely used in high-voltage power management systems, inverters, power converters and other fields, providing reliable performance and efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 5A | 1500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. STH4N90-VB Detailed Parameter Description
| **Parameter Category** | **Parameter Value** | **Description** |
|---------------------|---------------------------|--------------------------------------------|
| **Package** | TO247 | Package is suitable for high power applications and has good heat dissipation capability|
| **Configuration** | Single-N-Channel | Single N-channel MOSFET, suitable for power switching and power management|
| **Drain-Source Voltage (VDS)** | 900V | Suitable for high voltage applications and can withstand large voltage pressure|
| **Gate-Source Voltage (VGS)** | ±30V | Supports a wider gate drive voltage range and provides higher flexibility|
| **Turning Voltage (Vth)** | 3.5V | Moderate turning voltage, suitable for conventional gate drive circuits|
| **On-Resistance (RDS(ON))** | 1500mΩ @ VGS=10V | Higher on-resistance, suitable for some medium current power applications|
| **Maximum drain current (ID)** | 5A | Supports moderate current load, suitable for medium power applications|
| **Technology** | SJ_Multi-EPI | Adopts Multi-EPI technology to ensure low loss and high efficiency|
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| **Parameter Category** | **Parameter Value** | **Description** |
|---------------------|---------------------------|--------------------------------------------|
| **Package** | TO247 | Package is suitable for high power applications and has good heat dissipation capability|
| **Configuration** | Single-N-Channel | Single N-channel MOSFET, suitable for power switching and power management|
| **Drain-Source Voltage (VDS)** | 900V | Suitable for high voltage applications and can withstand large voltage pressure|
| **Gate-Source Voltage (VGS)** | ±30V | Supports a wider gate drive voltage range and provides higher flexibility|
| **Turning Voltage (Vth)** | 3.5V | Moderate turning voltage, suitable for conventional gate drive circuits|
| **On-Resistance (RDS(ON))** | 1500mΩ @ VGS=10V | Higher on-resistance, suitable for some medium current power applications|
| **Maximum drain current (ID)** | 5A | Supports moderate current load, suitable for medium power applications|
| **Technology** | SJ_Multi-EPI | Adopts Multi-EPI technology to ensure low loss and high efficiency|
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Domain and module applications：
3. Application fields and modules
#### 1. **Power converter (AC-DC, DC-DC)**
STH4N90-VB is widely used in power converters, especially for AC-DC and DC-DC converters. Its 900V drain-source voltage enables it to withstand high voltage input and is suitable for power conversion design in the industrial and power electronics fields. Although its on-resistance is relatively high (1500mΩ), it can still provide sufficient performance for some lower power applications where efficiency requirements are not particularly demanding. For example, STH4N90-VB can be used in low-power solar inverters or small UPS systems to meet the current and voltage requirements in these systems.
#### 2. **Power management for power tools and home appliances**
STH4N90-VB is also suitable for power management of power tools and home appliances. Its maximum drain current is 5A, which is suitable for handling low to medium power supply requirements. Due to its high on-resistance, it may not be suitable for ultra-efficient power supply designs, but for applications such as low- and medium-power power tools and home appliance power systems, it can provide reliable switching control and meet general performance requirements.
#### 3. **Lighting Power Supply and Battery Charger**
In lighting power supply and battery charger designs, STH4N90-VB can be used as a high-voltage power switch. Its 900V voltage and 5A current capability make it suitable for low-power LED driver power supplies, chargers, and other battery management systems. Especially for some systems that do not require extremely low on-resistance, STH4N90-VB can provide sufficient performance while maintaining a relatively reasonable cost.
#### 4. **Inverter and Power Electronics**
The 900V maximum drain-source voltage of STH4N90-VB makes it suitable for inverters and power electronics, especially those applications with higher voltage requirements but lower power requirements. The power switch components in the inverter usually need to withstand higher voltages and require relatively low on-resistance to reduce power losses. Although the on-resistance of the STN4N90-VB is higher, it still provides a good compromise between cost and efficiency.
#### 5. **High-voltage power supply protection**
Due to its high drain-source voltage of 900V, the STH4N90-VB can be used for protection and switch control of high-voltage power supplies. It can be used as a protection switch in some high-voltage power supply systems, or in overvoltage/overcurrent protection modules. Its moderate current capability (5A) enables it to meet the needs of medium-voltage power supply protection.
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### Summary
The STH4N90-VB is an N-channel MOSFET for medium and high voltage applications with a drain-source voltage of 900V and a drain current capability of 5A. Although its on-resistance is relatively high, it is still suitable for some low-to-medium power switch control applications, such as AC-DC and DC-DC converters, power tools, lighting power supplies, inverters, and high-voltage power supply protection. Using SJ_Multi-EPI technology, the STH4N90-VB provides a certain efficiency and performance, suitable for those medium-power applications that are cost-sensitive and require a certain current and voltage range.
#### 1. **Power converter (AC-DC, DC-DC)**
STH4N90-VB is widely used in power converters, especially for AC-DC and DC-DC converters. Its 900V drain-source voltage enables it to withstand high voltage input and is suitable for power conversion design in the industrial and power electronics fields. Although its on-resistance is relatively high (1500mΩ), it can still provide sufficient performance for some lower power applications where efficiency requirements are not particularly demanding. For example, STH4N90-VB can be used in low-power solar inverters or small UPS systems to meet the current and voltage requirements in these systems.
#### 2. **Power management for power tools and home appliances**
STH4N90-VB is also suitable for power management of power tools and home appliances. Its maximum drain current is 5A, which is suitable for handling low to medium power supply requirements. Due to its high on-resistance, it may not be suitable for ultra-efficient power supply designs, but for applications such as low- and medium-power power tools and home appliance power systems, it can provide reliable switching control and meet general performance requirements.
#### 3. **Lighting Power Supply and Battery Charger**
In lighting power supply and battery charger designs, STH4N90-VB can be used as a high-voltage power switch. Its 900V voltage and 5A current capability make it suitable for low-power LED driver power supplies, chargers, and other battery management systems. Especially for some systems that do not require extremely low on-resistance, STH4N90-VB can provide sufficient performance while maintaining a relatively reasonable cost.
#### 4. **Inverter and Power Electronics**
The 900V maximum drain-source voltage of STH4N90-VB makes it suitable for inverters and power electronics, especially those applications with higher voltage requirements but lower power requirements. The power switch components in the inverter usually need to withstand higher voltages and require relatively low on-resistance to reduce power losses. Although the on-resistance of the STN4N90-VB is higher, it still provides a good compromise between cost and efficiency.
#### 5. **High-voltage power supply protection**
Due to its high drain-source voltage of 900V, the STH4N90-VB can be used for protection and switch control of high-voltage power supplies. It can be used as a protection switch in some high-voltage power supply systems, or in overvoltage/overcurrent protection modules. Its moderate current capability (5A) enables it to meet the needs of medium-voltage power supply protection.
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### Summary
The STH4N90-VB is an N-channel MOSFET for medium and high voltage applications with a drain-source voltage of 900V and a drain current capability of 5A. Although its on-resistance is relatively high, it is still suitable for some low-to-medium power switch control applications, such as AC-DC and DC-DC converters, power tools, lighting power supplies, inverters, and high-voltage power supply protection. Using SJ_Multi-EPI technology, the STH4N90-VB provides a certain efficiency and performance, suitable for those medium-power applications that are cost-sensitive and require a certain current and voltage range.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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