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STH200N55F3-2-VB Product details
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Product Introduction
**STH200N55F3-2-VB** is a **Single-N-Channel** power MOSFET in **TO263** package, designed for high current and low voltage applications. This model has a very low **on-resistance** (RDS(ON)). When **VGS=10V**, RDS(ON) reaches **2.5mΩ**, and when **VGS=4.5V**, it is **7mΩ**, which greatly reduces power loss and improves system efficiency. Its **VDS** (maximum drain-source voltage) is **60V**, supporting a higher current carrying capacity of **270A**, which is very suitable for occasions requiring high current and low loss. This MOSFET adopts **Trench** technology, with good switching performance and low conduction loss, making it excel in applications such as power management and industrial drives.
**STH200N55F3-2-VB** is a **Single-N-Channel** power MOSFET in **TO263** package, designed for high current and low voltage applications. This model has a very low **on-resistance** (RDS(ON)). When **VGS=10V**, RDS(ON) reaches **2.5mΩ**, and when **VGS=4.5V**, it is **7mΩ**, which greatly reduces power loss and improves system efficiency. Its **VDS** (maximum drain-source voltage) is **60V**, supporting a higher current carrying capacity of **270A**, which is very suitable for occasions requiring high current and low loss. This MOSFET adopts **Trench** technology, with good switching performance and low conduction loss, making it excel in applications such as power management and industrial drives.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | 2.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
| **Parameter** | **Value** | **Unit** | **Description** |
|--------------------|-----------------------------------|---------|--------------------------------------------------------|
| **Package Type** | TO263 | — | Compact package for applications with high power and low space requirements. |
| **Configuration** | Single-N-Channel | — | Single N-channel MOSFET for high-efficiency switch control and power management. |
| **Drain-Source Voltage (VDS)** | 60V | V | Maximum drain-source voltage for low voltage control and power management applications. |
| **Gate-Source Voltage (VGS)** | ±20V | V | Supports gate voltages of ±20V to accommodate different drive voltage requirements. |
| **Threshold Voltage (Vth)** | 3V | V | Turn-on threshold voltage, at which the MOSFET begins to turn on. |
| **On-resistance (RDS(ON))** | 7mΩ@VGS=4.5V | Ω | On-resistance at **VGS=4.5V**, providing low power consumption and high efficiency. |
| | 2.5mΩ@VGS=10V | Ω | On-resistance at **VGS=10V**, ensuring low conduction loss and high efficiency. |
| **Drain current (ID)** | 270A | A | Maximum drain current, suitable for applications with high current load. |
| **Technology** | Trench | — | Adopts Trench technology to provide low on-resistance and high efficiency switching performance. |
| **Operating temperature range** | -55 ~ 150°C | °C | Wide temperature range, suitable for various industrial and high temperature environment applications. |
---
| **Parameter** | **Value** | **Unit** | **Description** |
|--------------------|-----------------------------------|---------|--------------------------------------------------------|
| **Package Type** | TO263 | — | Compact package for applications with high power and low space requirements. |
| **Configuration** | Single-N-Channel | — | Single N-channel MOSFET for high-efficiency switch control and power management. |
| **Drain-Source Voltage (VDS)** | 60V | V | Maximum drain-source voltage for low voltage control and power management applications. |
| **Gate-Source Voltage (VGS)** | ±20V | V | Supports gate voltages of ±20V to accommodate different drive voltage requirements. |
| **Threshold Voltage (Vth)** | 3V | V | Turn-on threshold voltage, at which the MOSFET begins to turn on. |
| **On-resistance (RDS(ON))** | 7mΩ@VGS=4.5V | Ω | On-resistance at **VGS=4.5V**, providing low power consumption and high efficiency. |
| | 2.5mΩ@VGS=10V | Ω | On-resistance at **VGS=10V**, ensuring low conduction loss and high efficiency. |
| **Drain current (ID)** | 270A | A | Maximum drain current, suitable for applications with high current load. |
| **Technology** | Trench | — | Adopts Trench technology to provide low on-resistance and high efficiency switching performance. |
| **Operating temperature range** | -55 ~ 150°C | °C | Wide temperature range, suitable for various industrial and high temperature environment applications. |
---
Domain and module applications：
Applications and module examples
**STH200N55F3-2-VB** is a high-efficiency **Single-N-Channel** MOSFET suitable for power management and power control fields that require **high current and low loss**. The following are typical application scenarios of this model:
1. **Electric Vehicle (EV) Battery Management System (BMS)**
**STH200N55F3-2-VB** can be widely used in **electric vehicle** battery management systems. Due to its **270A** high current carrying capacity, it can effectively control the battery charging and discharging process, ensuring that the battery works stably under high load conditions. In addition, the low **RDS(ON)** makes the battery system low loss during charging, which can improve the overall system efficiency and reduce heat generation.
2. **High-efficiency Switching Power Supply (SMPS)**
In **Switching Power Supply** (SMPS), **STH200N55F3-2-VB** can be used as an efficient power switching device. Its low **RDS(ON)** value and high current capability enable it to efficiently convert input voltage while minimizing energy loss, making it ideal for applications such as **DC-DC converters** and **AC-DC adapters**.
3. **Industrial Drive Control Systems**
**STH200N55F3-2-VB** can be used in drive systems in the field of industrial automation, such as motor control, servo drives, etc. Due to its high current carrying capacity, it can handle higher power requirements, ensuring high efficiency and long-term stable operation of the drive system.
4. **Solar Inverter**
In **Solar Inverter**, **STH200N55F3-2-VB** is suitable for applications that convert direct current generated by solar energy into alternating current. The low on-resistance and high switching speed of this MOSFET can effectively reduce energy loss and improve inverter efficiency. It is widely used in **photovoltaic power generation** and **home solar systems**.
5. **UPS (Uninterruptible Power Supply) System**
In the **Uninterruptible Power Supply System** (UPS), **STH200N55F3-2-VB** can be used for efficient power conversion and stable current supply. Its high current carrying capacity can ensure that in the event of a power outage, the UPS system provides stable power to the load and ensures uninterrupted power supply. It is particularly suitable for **data center** and **industrial control** applications.
6. **Portable Power Equipment**
Due to its high current capability and low power consumption, **STH200N55F3-2-VB** is also suitable for **portable power equipment**, such as battery-powered power tools, outdoor power modules, etc. It can provide stable power conversion to ensure that the equipment can run for a long time without generating excessive heat.
### Summary
The **STH200N55F3-2-VB** is a high-efficiency **Single-N-Channel** MOSFET in **TO263** package, suitable for high current and low voltage power control applications. Its **270A** maximum drain current and ultra-low **RDS(ON)** value (**2.5mΩ** at **VGS=10V**) make it very effective in **electric vehicle battery management systems, switching power supplies, industrial drive systems, solar inverters, UPS systems** and other fields. The low conduction loss and high current carrying capability of this device make it an ideal choice for high-efficiency power management, low-loss applications.
**STH200N55F3-2-VB** is a high-efficiency **Single-N-Channel** MOSFET suitable for power management and power control fields that require **high current and low loss**. The following are typical application scenarios of this model:
1. **Electric Vehicle (EV) Battery Management System (BMS)**
**STH200N55F3-2-VB** can be widely used in **electric vehicle** battery management systems. Due to its **270A** high current carrying capacity, it can effectively control the battery charging and discharging process, ensuring that the battery works stably under high load conditions. In addition, the low **RDS(ON)** makes the battery system low loss during charging, which can improve the overall system efficiency and reduce heat generation.
2. **High-efficiency Switching Power Supply (SMPS)**
In **Switching Power Supply** (SMPS), **STH200N55F3-2-VB** can be used as an efficient power switching device. Its low **RDS(ON)** value and high current capability enable it to efficiently convert input voltage while minimizing energy loss, making it ideal for applications such as **DC-DC converters** and **AC-DC adapters**.
3. **Industrial Drive Control Systems**
**STH200N55F3-2-VB** can be used in drive systems in the field of industrial automation, such as motor control, servo drives, etc. Due to its high current carrying capacity, it can handle higher power requirements, ensuring high efficiency and long-term stable operation of the drive system.
4. **Solar Inverter**
In **Solar Inverter**, **STH200N55F3-2-VB** is suitable for applications that convert direct current generated by solar energy into alternating current. The low on-resistance and high switching speed of this MOSFET can effectively reduce energy loss and improve inverter efficiency. It is widely used in **photovoltaic power generation** and **home solar systems**.
5. **UPS (Uninterruptible Power Supply) System**
In the **Uninterruptible Power Supply System** (UPS), **STH200N55F3-2-VB** can be used for efficient power conversion and stable current supply. Its high current carrying capacity can ensure that in the event of a power outage, the UPS system provides stable power to the load and ensures uninterrupted power supply. It is particularly suitable for **data center** and **industrial control** applications.
6. **Portable Power Equipment**
Due to its high current capability and low power consumption, **STH200N55F3-2-VB** is also suitable for **portable power equipment**, such as battery-powered power tools, outdoor power modules, etc. It can provide stable power conversion to ensure that the equipment can run for a long time without generating excessive heat.
### Summary
The **STH200N55F3-2-VB** is a high-efficiency **Single-N-Channel** MOSFET in **TO263** package, suitable for high current and low voltage power control applications. Its **270A** maximum drain current and ultra-low **RDS(ON)** value (**2.5mΩ** at **VGS=10V**) make it very effective in **electric vehicle battery management systems, switching power supplies, industrial drive systems, solar inverters, UPS systems** and other fields. The low conduction loss and high current carrying capability of this device make it an ideal choice for high-efficiency power management, low-loss applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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