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STH18NB40-VB Product details
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1. Product Introduction:
**STH18NB40-VB** is a single N-channel MOSFET in TO247 package with a high drain-source withstand voltage (VDS) of 500V, suitable for high voltage and high current switching applications. Its maximum drain current (ID) is 40A, and it has a low on-resistance (RDS(ON)) of 80mΩ@VGS=10V, which can effectively reduce switching loss and power loss. This MOSFET adopts **SJ_Multi-EPI** technology, has strong heat resistance, and is suitable for high temperature and high power applications. Its higher threshold voltage (Vth) is 3.8V, which enables stable switching performance even at standard driving voltage. **STH18NB40-VB** is widely used in high-efficiency power control modules such as power conversion, inverters, and power management.
**STH18NB40-VB** is a single N-channel MOSFET in TO247 package with a high drain-source withstand voltage (VDS) of 500V, suitable for high voltage and high current switching applications. Its maximum drain current (ID) is 40A, and it has a low on-resistance (RDS(ON)) of 80mΩ@VGS=10V, which can effectively reduce switching loss and power loss. This MOSFET adopts **SJ_Multi-EPI** technology, has strong heat resistance, and is suitable for high temperature and high power applications. Its higher threshold voltage (Vth) is 3.8V, which enables stable switching performance even at standard driving voltage. **STH18NB40-VB** is widely used in high-efficiency power control modules such as power conversion, inverters, and power management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. Detailed parameter description:
- **Package type**: TO247
- **Configuration**: Single N-channel MOSFET
- **Drain-source withstand voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**:
- 80mΩ (at VGS = 10V)
- **Maximum drain current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
- **Maximum power loss**: Approx. 200W (depending on application and operating conditions)
- **Operating temperature range**: -55°C to +150°C
- **Maximum gate-source voltage (VGS(max))**: ±30V
- **Typical switching time**: nanosecond level, suitable for high frequency switching applications
- **Gate charge**: Typical gate charge is about 85nC (VDS = 400V, ID = 40A, VGS = 10V)
- **Package type**: TO247
- **Configuration**: Single N-channel MOSFET
- **Drain-source withstand voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**:
- 80mΩ (at VGS = 10V)
- **Maximum drain current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
- **Maximum power loss**: Approx. 200W (depending on application and operating conditions)
- **Operating temperature range**: -55°C to +150°C
- **Maximum gate-source voltage (VGS(max))**: ±30V
- **Typical switching time**: nanosecond level, suitable for high frequency switching applications
- **Gate charge**: Typical gate charge is about 85nC (VDS = 400V, ID = 40A, VGS = 10V)
Domain and module applications：
3. Applications and modules:
**STH18NB40-VB**'s high withstand voltage, low on-resistance and high current carrying capacity make it particularly suitable for high-power, high-efficiency power management and conversion modules. The following are typical applications of this type of MOSFET:
- **Power conversion applications**:
**STH18NB40-VB** has a high withstand voltage of 500V and is suitable for AC-DC and DC-DC power converters. It can be used in inverters, adapters and power supply modules, especially in industrial power supplies that require high efficiency and low energy consumption, providing stable switching performance and low power loss.
- **Uninterruptible power supply (UPS)**:
In an uninterruptible power supply system (UPS), **STH18NB40-VB** is used as a switch control element to efficiently convert input power and provide stable current to the load. Due to its good thermal management and high current carrying capacity, it is particularly suitable for use in high-power UPS power supplies to ensure continued stable power supply during power outages.
- **Power Tools and Battery Management Systems (BMS)**:
Due to its high drain-source withstand voltage and low on-resistance, **STH18NB40-VB** can be used as the main switch for current regulation in the battery management system of power tools. It can effectively control the charging and discharging of the battery, optimize battery performance and increase battery life.
- **Inverter and Solar Power System**:
**STH18NB40-VB** is particularly suitable for use in solar inverters, capable of withstanding voltages up to 500V, converting the DC voltage of solar cells into AC power. Its high switching speed and low loss characteristics are very suitable for photovoltaic inverter systems to improve energy conversion efficiency.
- **Electric Vehicle Charging System**:
In the charging system of electric vehicles, **STH18NB40-VB** can be used as a switching element in the DC-DC converter to efficiently convert power to the voltage required by the electric vehicle battery. Its high withstand voltage and high current capabilities make it suitable for fast charging and high-power battery management applications.
- **Power Factor Correction (PFC) Circuit**:
This MOSFET can be used in PFC circuits to improve power supply efficiency and reduce harmonic distortion. In power factor correction circuits, the use of **STH18NB40-VB** can improve the quality of power input current, reduce the impact on the power grid, and ensure efficient transmission of electrical energy.
- **LED Lighting Driver Power Supply**:
Due to its low on-resistance and high current carrying capacity, **STH18NB40-VB** can be used as a switching element in LED lighting power supplies. It can improve the efficiency of the driver power supply, provide stable current, and extend the service life of LED lamps. It is widely used in commercial lighting, intelligent lighting systems and other fields.
**STH18NB40-VB**'s high withstand voltage, low on-resistance and high current carrying capacity make it particularly suitable for high-power, high-efficiency power management and conversion modules. The following are typical applications of this type of MOSFET:
- **Power conversion applications**:
**STH18NB40-VB** has a high withstand voltage of 500V and is suitable for AC-DC and DC-DC power converters. It can be used in inverters, adapters and power supply modules, especially in industrial power supplies that require high efficiency and low energy consumption, providing stable switching performance and low power loss.
- **Uninterruptible power supply (UPS)**:
In an uninterruptible power supply system (UPS), **STH18NB40-VB** is used as a switch control element to efficiently convert input power and provide stable current to the load. Due to its good thermal management and high current carrying capacity, it is particularly suitable for use in high-power UPS power supplies to ensure continued stable power supply during power outages.
- **Power Tools and Battery Management Systems (BMS)**:
Due to its high drain-source withstand voltage and low on-resistance, **STH18NB40-VB** can be used as the main switch for current regulation in the battery management system of power tools. It can effectively control the charging and discharging of the battery, optimize battery performance and increase battery life.
- **Inverter and Solar Power System**:
**STH18NB40-VB** is particularly suitable for use in solar inverters, capable of withstanding voltages up to 500V, converting the DC voltage of solar cells into AC power. Its high switching speed and low loss characteristics are very suitable for photovoltaic inverter systems to improve energy conversion efficiency.
- **Electric Vehicle Charging System**:
In the charging system of electric vehicles, **STH18NB40-VB** can be used as a switching element in the DC-DC converter to efficiently convert power to the voltage required by the electric vehicle battery. Its high withstand voltage and high current capabilities make it suitable for fast charging and high-power battery management applications.
- **Power Factor Correction (PFC) Circuit**:
This MOSFET can be used in PFC circuits to improve power supply efficiency and reduce harmonic distortion. In power factor correction circuits, the use of **STH18NB40-VB** can improve the quality of power input current, reduce the impact on the power grid, and ensure efficient transmission of electrical energy.
- **LED Lighting Driver Power Supply**:
Due to its low on-resistance and high current carrying capacity, **STH18NB40-VB** can be used as a switching element in LED lighting power supplies. It can improve the efficiency of the driver power supply, provide stable current, and extend the service life of LED lamps. It is widely used in commercial lighting, intelligent lighting systems and other fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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