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STG8210-VB Product details
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Product Introduction
**STG8210-VB** is a **Common Drain-N+N-Channel** dual MOSFET in **TSSOP8** package, designed for low-voltage and high-performance applications. The device has a maximum drain-source voltage (VDS) of **20V**, suitable for low-voltage control and drive systems. This type of MOSFET adopts **Trench** technology and has low on-resistance (**RDS(ON)**) and high drain current (**7.6A**). By integrating two N-channel MOSFETs in the same package, it provides an efficient and space-saving solution suitable for power management and switch control applications with high requirements on volume, power consumption and performance.
**STG8210-VB** is a **Common Drain-N+N-Channel** dual MOSFET in **TSSOP8** package, designed for low-voltage and high-performance applications. The device has a maximum drain-source voltage (VDS) of **20V**, suitable for low-voltage control and drive systems. This type of MOSFET adopts **Trench** technology and has low on-resistance (**RDS(ON)**) and high drain current (**7.6A**). By integrating two N-channel MOSFETs in the same package, it provides an efficient and space-saving solution suitable for power management and switch control applications with high requirements on volume, power consumption and performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 7.6A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 7.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 7.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
Detailed parameter description
| **Parameter** | **Value** | **Unit** | **Description** |
|--------------------|-----------------------------------|---------|--------------------------------------------------------|
| **Package Type** | TSSOP8 | — | Compact package for space-constrained applications such as portable devices, battery-driven devices, etc. |
| **Configuration** | Common Drain-N+N-Channel | — | Dual N-channel configuration for switch-mode power supplies, drivers, and power management circuits. |
| **Drain-Source Voltage (VDS)** | 20V | V | Maximum drain-source voltage for high-efficiency power and switching applications in the low voltage range. |
| **Gate-Source Voltage (VGS)** | ±12V | V | Supports gate voltage of ±12V to meet different drive voltage requirements. |
| **Threshold voltage (Vth)** | 0.5~1.5V | V | Turn-on threshold voltage, providing fast response and efficient switching performance. |
| **On-resistance (RDS(ON))** | 18mΩ@VGS=2.5V | Ω | On-resistance at **VGS=2.5V**, suitable for low voltage drive applications. |
| | 14mΩ@VGS=4.5V | Ω | On-resistance at **VGS=4.5V**, ensuring low conduction loss and high efficiency. |
| **Drain current (ID)** | 7.6A | A | Maximum drain current of each N-channel MOSFET, suitable for high current load applications. |
| **Technology** | Trench | — | Adopts Trench technology to provide lower on-resistance and efficient switching performance. |
| **Operating Temperature Range** | -40 ~ 125°C | °C | Wide temperature range, suitable for various industrial and consumer applications. |
---
| **Parameter** | **Value** | **Unit** | **Description** |
|--------------------|-----------------------------------|---------|--------------------------------------------------------|
| **Package Type** | TSSOP8 | — | Compact package for space-constrained applications such as portable devices, battery-driven devices, etc. |
| **Configuration** | Common Drain-N+N-Channel | — | Dual N-channel configuration for switch-mode power supplies, drivers, and power management circuits. |
| **Drain-Source Voltage (VDS)** | 20V | V | Maximum drain-source voltage for high-efficiency power and switching applications in the low voltage range. |
| **Gate-Source Voltage (VGS)** | ±12V | V | Supports gate voltage of ±12V to meet different drive voltage requirements. |
| **Threshold voltage (Vth)** | 0.5~1.5V | V | Turn-on threshold voltage, providing fast response and efficient switching performance. |
| **On-resistance (RDS(ON))** | 18mΩ@VGS=2.5V | Ω | On-resistance at **VGS=2.5V**, suitable for low voltage drive applications. |
| | 14mΩ@VGS=4.5V | Ω | On-resistance at **VGS=4.5V**, ensuring low conduction loss and high efficiency. |
| **Drain current (ID)** | 7.6A | A | Maximum drain current of each N-channel MOSFET, suitable for high current load applications. |
| **Technology** | Trench | — | Adopts Trench technology to provide lower on-resistance and efficient switching performance. |
| **Operating Temperature Range** | -40 ~ 125°C | °C | Wide temperature range, suitable for various industrial and consumer applications. |
---
Domain and module applications：
Applications and module examples
**STG8210-VB** is a **Common Drain-N+N-Channel** MOSFET suitable for **low voltage and high efficiency applications**. Its low on-resistance and high current carrying capacity make it an ideal choice for many modern power management systems and high-efficiency switching applications. Here are some typical applications of this MOSFET:
1. **Battery Management System (BMS)**
**STG8210-VB** is suitable for **Battery Management System** (BMS), especially in **portable electronic devices** (such as smartphones, laptops) and **power tools**. Due to its low on-resistance and high current carrying capacity, this MOSFET can efficiently control the charging and discharging process of the battery, extend battery life and improve efficiency.
2. **DC-DC Converter**
In **DC-DC Converter**, **STG8210-VB** is used for low voltage and high efficiency power conversion. Due to its low on-resistance and high current capability, it is suitable for power modules that require high frequency, high efficiency and low losses, and is widely used in **switching power supply** and **inverter** systems.
3. **Electric drive system**
**STG8210-VB** In **electric drive systems**, such as **electric scooters** or **electric bicycles**, it provides low power consumption and efficient switching control. It can handle higher current loads, ensuring the stability and energy efficiency of the drive system.
4. **Photovoltaic system inverter**
In **photovoltaic inverter**, **STG8210-VB** is used for efficient power conversion and control. It converts the DC power generated by the photovoltaic panel into AC power while reducing energy losses. Due to its low on-resistance, it is essential to improve the efficiency of the system.
5. **Low-voltage power supply system**
In some **low-voltage power supply systems**, **STG8210-VB** is suitable for loads that require **20V** or less, such as some small power modules, chargers, etc. Its high efficiency and low power consumption make it an ideal choice, especially in battery-powered devices.
6. **Automation and consumer electronics devices**
**STG8210-VB** is also widely used in **automation control** and **consumer electronics devices**, such as power management modules for home appliances, power switch modules in TVs and audio systems. Its low on-resistance can improve the overall energy efficiency of the system and reduce heat generation.
**STG8210-VB** is a **Common Drain-N+N-Channel** MOSFET suitable for **low voltage and high efficiency applications**. Its low on-resistance and high current carrying capacity make it an ideal choice for many modern power management systems and high-efficiency switching applications. Here are some typical applications of this MOSFET:
1. **Battery Management System (BMS)**
**STG8210-VB** is suitable for **Battery Management System** (BMS), especially in **portable electronic devices** (such as smartphones, laptops) and **power tools**. Due to its low on-resistance and high current carrying capacity, this MOSFET can efficiently control the charging and discharging process of the battery, extend battery life and improve efficiency.
2. **DC-DC Converter**
In **DC-DC Converter**, **STG8210-VB** is used for low voltage and high efficiency power conversion. Due to its low on-resistance and high current capability, it is suitable for power modules that require high frequency, high efficiency and low losses, and is widely used in **switching power supply** and **inverter** systems.
3. **Electric drive system**
**STG8210-VB** In **electric drive systems**, such as **electric scooters** or **electric bicycles**, it provides low power consumption and efficient switching control. It can handle higher current loads, ensuring the stability and energy efficiency of the drive system.
4. **Photovoltaic system inverter**
In **photovoltaic inverter**, **STG8210-VB** is used for efficient power conversion and control. It converts the DC power generated by the photovoltaic panel into AC power while reducing energy losses. Due to its low on-resistance, it is essential to improve the efficiency of the system.
5. **Low-voltage power supply system**
In some **low-voltage power supply systems**, **STG8210-VB** is suitable for loads that require **20V** or less, such as some small power modules, chargers, etc. Its high efficiency and low power consumption make it an ideal choice, especially in battery-powered devices.
6. **Automation and consumer electronics devices**
**STG8210-VB** is also widely used in **automation control** and **consumer electronics devices**, such as power management modules for home appliances, power switch modules in TVs and audio systems. Its low on-resistance can improve the overall energy efficiency of the system and reduce heat generation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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