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STG8209-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction:
**STG8209-VB** is a dual N-channel MOSFET in TSSOP8 package with common source configuration and low on-resistance, using Trench technology. This product has low on-resistance (RDS(ON)) and high current carrying capacity (maximum 6.6A), suitable for applications such as low-voltage power switches, load switches and battery management systems. Its drain-source withstand voltage (VDS) is 20V, gate-source voltage (VGS) is ±20V, and threshold voltage (Vth) is between 0.5V and 1.5V, which makes its switching performance under low-voltage control very good. **STG8209-VB** can provide efficient and low-loss current conduction under low voltage conditions, suitable for a variety of applications such as portable devices, load switching, high-speed switching and power management.
**STG8209-VB** is a dual N-channel MOSFET in TSSOP8 package with common source configuration and low on-resistance, using Trench technology. This product has low on-resistance (RDS(ON)) and high current carrying capacity (maximum 6.6A), suitable for applications such as low-voltage power switches, load switches and battery management systems. Its drain-source withstand voltage (VDS) is 20V, gate-source voltage (VGS) is ±20V, and threshold voltage (Vth) is between 0.5V and 1.5V, which makes its switching performance under low-voltage control very good. **STG8209-VB** can provide efficient and low-loss current conduction under low voltage conditions, suitable for a variety of applications such as portable devices, load switching, high-speed switching and power management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
2. Detailed parameter description:
- **Package type**: TSSOP8
- **Configuration**: Common source configuration, dual N-channel MOSFET
- **Drain-source withstand voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 32mΩ (at VGS=2.5V)
- 22mΩ (at VGS=4.5V)
- **Maximum drain current (ID)**: 6.6A
- **Technology**: Trench
- **Maximum power loss**: Approx. 1.3W (depending on application and operating environment)
- **Operating temperature range**: -55°C to +150°C
- **Maximum gate-source voltage (VGS(max))**: ±20V
- **Switching time**: Typical switching time is in nanoseconds, suitable for high-frequency switching applications
- **Gate charge**: Typical gate charge is 10nC (VDS = 10V, ID = 6A, VGS = 4.5V)
- **Package type**: TSSOP8
- **Configuration**: Common source configuration, dual N-channel MOSFET
- **Drain-source withstand voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 32mΩ (at VGS=2.5V)
- 22mΩ (at VGS=4.5V)
- **Maximum drain current (ID)**: 6.6A
- **Technology**: Trench
- **Maximum power loss**: Approx. 1.3W (depending on application and operating environment)
- **Operating temperature range**: -55°C to +150°C
- **Maximum gate-source voltage (VGS(max))**: ±20V
- **Switching time**: Typical switching time is in nanoseconds, suitable for high-frequency switching applications
- **Gate charge**: Typical gate charge is 10nC (VDS = 10V, ID = 6A, VGS = 4.5V)
Domain and module applications：
3. Applications and modules:
**STG8209-VB**'s low drain-source withstand voltage and low on-resistance make it an ideal choice for a variety of low-voltage, high-efficiency switching applications. The following are typical applications of this type of MOSFET:
- **Load switch**:
**STG8209-VB** is particularly suitable for load switch applications, where the flow of current needs to be controlled by a switch, and can efficiently control the load switch in a low-voltage power supply. This MOSFET can be operated with a low gate voltage while ensuring low conduction losses at higher currents, and is widely used in mobile devices, consumer electronics, and portable battery-powered devices.
- **Battery Management System (BMS)**:
In a battery management system, **STG8209-VB** can effectively control the battery charging and discharging process, especially in a low-voltage working environment. Its low on-resistance and high current carrying capacity (maximum 6.6A) make it an ideal choice to optimize battery charging and discharging efficiency, and is used in power tools, portable equipment, UPS battery-powered systems and other fields.
- **Low Voltage Switching Power Supply (LDO, DC-DC Converter)**:
In low voltage environments (such as below 5V), **STG8209-VB** can be used as a switching element in a DC-DC converter, or as a switching control element in a low voltage LDO (linear regulator). Due to its low on-resistance, it can operate efficiently under low voltage and high current conditions, making it ideal for power management modules in smartphones, tablets, and other portable devices.
- **Motor Drive Control**:
In motor drive systems, especially in low-power and medium-power applications, **STG8209-VB** can be used as a switching control element to improve the efficiency of the motor drive through its low on-resistance. This MOSFET is widely used in micro motor drives, fan controls, automation equipment, and small household appliances.
- **LED Driver**:
Due to its low on-resistance and high current carrying capacity, **STG8209-VB** can effectively control the current flow in LED driver power, suitable for high-efficiency LED lighting systems and small display devices. This MOSFET helps reduce power consumption and maintain a stable current output, extending the service life of the LED.
- **Intelligent Power Module**:
**STG8209-VB** is suitable for various intelligent power modules (such as adaptive power management, overvoltage protection, overcurrent protection and other power modules), especially in power management systems that require low power consumption and fast response. It is able to switch quickly at low gate voltages, suitable for devices that require miniaturization and compact design, such as smart watches, wireless sensors and portable medical devices.
- **Current Monitoring and Power Protection Circuits**:
**STG8209-VB** is suitable for current monitoring circuits and overcurrent protection modules, and its excellent switching performance and low on-resistance enable it to provide efficient current control in power protection applications. By effectively monitoring and regulating current flow, it ensures system stability when the load changes. It is widely used in mobile devices, chargers, smart power supplies and battery protection circuits.
**STG8209-VB**'s low drain-source withstand voltage and low on-resistance make it an ideal choice for a variety of low-voltage, high-efficiency switching applications. The following are typical applications of this type of MOSFET:
- **Load switch**:
**STG8209-VB** is particularly suitable for load switch applications, where the flow of current needs to be controlled by a switch, and can efficiently control the load switch in a low-voltage power supply. This MOSFET can be operated with a low gate voltage while ensuring low conduction losses at higher currents, and is widely used in mobile devices, consumer electronics, and portable battery-powered devices.
- **Battery Management System (BMS)**:
In a battery management system, **STG8209-VB** can effectively control the battery charging and discharging process, especially in a low-voltage working environment. Its low on-resistance and high current carrying capacity (maximum 6.6A) make it an ideal choice to optimize battery charging and discharging efficiency, and is used in power tools, portable equipment, UPS battery-powered systems and other fields.
- **Low Voltage Switching Power Supply (LDO, DC-DC Converter)**:
In low voltage environments (such as below 5V), **STG8209-VB** can be used as a switching element in a DC-DC converter, or as a switching control element in a low voltage LDO (linear regulator). Due to its low on-resistance, it can operate efficiently under low voltage and high current conditions, making it ideal for power management modules in smartphones, tablets, and other portable devices.
- **Motor Drive Control**:
In motor drive systems, especially in low-power and medium-power applications, **STG8209-VB** can be used as a switching control element to improve the efficiency of the motor drive through its low on-resistance. This MOSFET is widely used in micro motor drives, fan controls, automation equipment, and small household appliances.
- **LED Driver**:
Due to its low on-resistance and high current carrying capacity, **STG8209-VB** can effectively control the current flow in LED driver power, suitable for high-efficiency LED lighting systems and small display devices. This MOSFET helps reduce power consumption and maintain a stable current output, extending the service life of the LED.
- **Intelligent Power Module**:
**STG8209-VB** is suitable for various intelligent power modules (such as adaptive power management, overvoltage protection, overcurrent protection and other power modules), especially in power management systems that require low power consumption and fast response. It is able to switch quickly at low gate voltages, suitable for devices that require miniaturization and compact design, such as smart watches, wireless sensors and portable medical devices.
- **Current Monitoring and Power Protection Circuits**:
**STG8209-VB** is suitable for current monitoring circuits and overcurrent protection modules, and its excellent switching performance and low on-resistance enable it to provide efficient current control in power protection applications. By effectively monitoring and regulating current flow, it ensures system stability when the load changes. It is widely used in mobile devices, chargers, smart power supplies and battery protection circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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