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STF9N65M2-VB Product details

Product introduction:

1. Product Introduction:

**STF9N65M2-VB** is a single N-channel MOSFET in a TO220F package. It uses Plannar technology and has a drain-source withstand voltage (VDS) of 650V. It is suitable for medium and high voltage power conversion and power management systems. This MOSFET has a maximum drain current (ID) of 10A and a low on-resistance (RDS(ON) @ VGS = 10V) of 830mΩ, showing excellent switching characteristics in high voltage environments. Its threshold voltage (Vth) is 3.5V, which is suitable for a variety of high-efficiency power conversion and control applications. **STF9N65M2-VB** is particularly suitable for high-efficiency power modules, inverters, motor drive systems, and power factor correction (PFC) circuits, meeting industrial and consumer high voltage requirements.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 650V 3.5V 10A 830mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 650V 3.5V 10A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 650V 3.5V 10A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
2. Detailed parameter description:

- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source withstand voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 830mΩ (at VGS=10V)
- **Maximum drain current (ID)**: 10A
- **Technology**: Plannar
- **Maximum power loss**: 75W (under proper heat dissipation conditions)
- **Operating temperature range**: -55°C to +150°C
- **Maximum gate-source voltage (VGS(max))**: ±30V
- **Gate charge**: 23nC (VDS = 100V, ID = 10A, VGS = 10V)
- **Switching time**: Typical switching time 18ns (for high frequency switching applications)

Domain and module applications:

3. Application fields and modules:

The design features of **STF9N65M2-VB** make it very suitable for medium and high voltage power conversion, control and drive systems. The following are typical application fields of this MOSFET:

- **Switching Power Supply (SMPS)**:
**STF9N65M2-VB** has a high withstand voltage of 650V and a low on-resistance, which is suitable for various switching power supply (SMPS) systems, especially AC/DC converters, DC/DC converters and power factor correction (PFC) circuits. This MOSFET can effectively control the conversion of electric energy in a high voltage and high current environment, and is widely used in computer power supplies, industrial power supplies and high-power home appliances.

- **Power Inverters**:
In solar inverters, wind power inverters and other renewable energy power generation systems, **STF9N65M2-VB** can provide stable support for the efficient conversion of electric energy with its 650V withstand voltage and low on-resistance. This MOSFET is suitable for the inverter process of DC to AC and is widely used in the fields of energy management and smart grid.

- **Motor drive system**:
In the motor drive system, **STF9N65M2-VB** can achieve precise control of high-power motors, especially in automation control, home appliance drive, stepper motor control and industrial robot systems, which can improve the stability and power conversion efficiency of the drive system. This MOSFET can effectively reduce switching losses and improve the response speed of the system.

- **Battery Management System (BMS)**:
In battery management systems, especially electric vehicles and energy storage systems, **STF9N65M2-VB** provides efficient charging control and battery protection. This MOSFET effectively controls the battery charging and discharging process, prevents overcharging or over-discharging, and improves the battery life and safety. It is widely used in electric vehicles, energy storage equipment and portable electronic devices.

- **Power Factor Correction (PFC) Circuit**:
**STF9N65M2-VB** is suitable for PFC circuits, and its high voltage tolerance and low on-resistance characteristics make it an ideal choice. In the power factor correction circuit, the switching characteristics of the MOSFET directly affect the efficiency of the system. This MOSFET can help reduce power loss and optimize power conversion, and is widely used in industrial power management, home appliance power modules and other fields.

- **LED Driver Power Supply**:
In high-power LED driver power supplies, **STF9N65M2-VB** can achieve efficient current control and voltage stability, suitable for high-brightness LED lighting and other lighting control systems. MOSFET can provide precise current regulation, reduce heat generation, and ensure stable operation of LEDs, and is widely used in urban lighting, industrial lighting, and large display screens.

- **High Voltage Power Module**:
Due to its 650V drain-source withstand voltage, **STF9N65M2-VB** is suitable for various high voltage power modules, especially for high power supply, UPS power supply, power distribution system and other applications. In these modules, it can provide high efficiency and high reliability power conversion, and is widely used in important fields such as data centers, power facilities and communication base stations.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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