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STF8NM60N-VB Product details
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1. STF8NM60N-VB Product Introduction
STF8NM60N-VB is a high-voltage N-channel MOSFET in TO220F package, suitable for a variety of high-voltage applications. The maximum drain-source voltage (VDS) of this MOSFET is 650V, which can withstand medium and high voltage power and control applications. Its maximum drain current (ID) is 12A, which is suitable for higher current load applications. The on-resistance (RDS(ON)) is 680mΩ @ VGS=10V. The lower on-resistance helps reduce power loss and improve the overall efficiency of the system. Using Plannar technology, it has excellent switching performance, thermal stability and long service life. STF8NM60N-VB is a common high-voltage switching element in power electronic equipment, and is widely used in power management, motor control, solar inverters and other industrial applications.
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STF8NM60N-VB is a high-voltage N-channel MOSFET in TO220F package, suitable for a variety of high-voltage applications. The maximum drain-source voltage (VDS) of this MOSFET is 650V, which can withstand medium and high voltage power and control applications. Its maximum drain current (ID) is 12A, which is suitable for higher current load applications. The on-resistance (RDS(ON)) is 680mΩ @ VGS=10V. The lower on-resistance helps reduce power loss and improve the overall efficiency of the system. Using Plannar technology, it has excellent switching performance, thermal stability and long service life. STF8NM60N-VB is a common high-voltage switching element in power electronic equipment, and is widely used in power management, motor control, solar inverters and other industrial applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | 680mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. STF8NM60N-VB Detailed parameter description
| **Parameter category** | **Parameter value** | **Description** |
|---------------------|---------------------------|--------------------------------------|
| **Package** | TO220F | High power package, suitable for applications requiring heat dissipation|
| **Configuration** | Single N-channel | High voltage, high current switch applications|
| **Drain-source voltage (VDS)** | 650V | High voltage carrying capacity, suitable for high voltage power supply system|
| **Gate-source voltage (VGS)** | ±30V | Supports a wide range of gate drive voltages, suitable for various control circuits|
| **Turning voltage (Vth)** | 3.5V | Standard turning voltage, suitable for conventional gate drive requirements|
| **On-resistance (RDS(ON))** | 680mΩ @ VGS=10V | Lower on-resistance, suitable for high voltage current applications|
| **Maximum Drain Current (ID)** | 12A | Suitable for applications with higher current loads|
| **Technology** | Plannar | Provides better switching performance and thermal stability|
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| **Parameter category** | **Parameter value** | **Description** |
|---------------------|---------------------------|--------------------------------------|
| **Package** | TO220F | High power package, suitable for applications requiring heat dissipation|
| **Configuration** | Single N-channel | High voltage, high current switch applications|
| **Drain-source voltage (VDS)** | 650V | High voltage carrying capacity, suitable for high voltage power supply system|
| **Gate-source voltage (VGS)** | ±30V | Supports a wide range of gate drive voltages, suitable for various control circuits|
| **Turning voltage (Vth)** | 3.5V | Standard turning voltage, suitable for conventional gate drive requirements|
| **On-resistance (RDS(ON))** | 680mΩ @ VGS=10V | Lower on-resistance, suitable for high voltage current applications|
| **Maximum Drain Current (ID)** | 12A | Suitable for applications with higher current loads|
| **Technology** | Plannar | Provides better switching performance and thermal stability|
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Domain and module applications：
### 3. Application fields and modules
#### 1. **Power management and power conversion**
STF8NM60N-VB has a wide range of applications in power management and power conversion. Its drain-source voltage is 650V, which can effectively manage the flow of power in high-voltage environments and is suitable for use as a switching element in various power modules, such as DC-DC converters, AC-DC converters, and voltage-regulated power supply systems. Its low on-resistance (680mΩ @ VGS=10V) can reduce power loss, improve system efficiency, and reduce heat generation, making it particularly suitable for power management applications that require high efficiency and long-term stable operation.
#### 2. **Motor drive system**
The maximum drain current of STF8NM60N-VB is 12A, which is suitable for medium-power motor drive systems. In applications such as power tools, electric fans, air conditioning compressors, and industrial equipment drives, STF8NM60N-VB can be used as a switching element to control motor start-up, speed regulation, and direction control. Its lower on-resistance can reduce power loss, improve the overall efficiency of the motor drive system, and extend the service life of the motor.
#### 3. **Solar Inverter**
In solar power generation systems, STF8NM60N-VB is widely used in solar inverters as a high-voltage MOSFET. It can withstand drain-source voltages up to 650V and is suitable for the process of converting direct current (DC) generated by photovoltaic panels into alternating current (AC) output. Low on-resistance enables more efficient conversion of electrical energy during the inversion process, improves overall energy efficiency, and ensures system stability under long-term high loads.
#### 4. **Uninterruptible Power Supply (UPS)**
STF8NM60N-VB is suitable for switches and power conversion modules in UPS (Uninterruptible Power Supply) systems. As a medium- and high-voltage MOSFET, it can withstand voltages up to 650V and has a lower on-resistance, which can effectively improve the energy efficiency of UPS systems. UPS systems can provide stable power to critical loads when the main power is off, and the STF8NM60N-VB plays an important role in the power conversion process to ensure the efficiency and reliability of power conversion.
#### 5. **Industrial Automation and High-Voltage Control Circuits**
STF8NM60N-VB is suitable for high-voltage control circuits and power control modules in industrial automation systems. As a high-voltage switching element, it can control the start and stop, operation mode and power transmission of various industrial equipment. For example, in applications such as power transmission control, high-voltage electrical equipment control, and heavy-duty motor drive, the STF8NM60N-VB can provide stable and reliable control capabilities to meet the requirements of high efficiency and long-term stable operation.
### Summary
STF8NM60N-VB is an efficient and reliable high-voltage N-channel MOSFET suitable for a variety of high-voltage power management and control applications. Its low on-resistance (680mΩ) ensures high efficiency of power conversion, while its high drain-source voltage of 650V enables it to be widely used in industrial power equipment, motor control, solar inverters and UPS systems. The Plannar technology of this MOSFET also gives it excellent switching performance and good thermal stability, suitable for long-term and efficient operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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