中文
English
STF6N80K5-VB Product details
Back to previous pageProduct introduction：
STF6N80K5-VB Product Introduction
STF6N80K5-VB is an N-channel power MOSFET using SJ_Multi-EPI technology, packaged in TO220F, designed for high-voltage switching and power control applications. The maximum drain-source voltage (VDS) of this MOSFET is 800V, which can cope with higher voltage requirements. The maximum drain current (ID) is 5A, suitable for low-power applications. Its on-resistance (RDS(ON)) is 1100mΩ at VGS = 10V, which is suitable for scenarios requiring moderate on-resistance and high voltage tolerance. STF6N80K5-VB is mainly used in power management, power conversion equipment and industrial control systems, with high reliability and excellent switching characteristics.
---
STF6N80K5-VB is an N-channel power MOSFET using SJ_Multi-EPI technology, packaged in TO220F, designed for high-voltage switching and power control applications. The maximum drain-source voltage (VDS) of this MOSFET is 800V, which can cope with higher voltage requirements. The maximum drain current (ID) is 5A, suitable for low-power applications. Its on-resistance (RDS(ON)) is 1100mΩ at VGS = 10V, which is suitable for scenarios requiring moderate on-resistance and high voltage tolerance. STF6N80K5-VB is mainly used in power management, power conversion equipment and industrial control systems, with high reliability and excellent switching characteristics.
---
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 5A | 1100mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
STF6N80K5-VB Detailed Parameter Description
| **Parameter** | **Value** | **Description** |
|-------------------------|-----------------------------|--------------------------------------------------|
| **Package Type** | TO220F | TO220F package, suitable for high power applications, with good heat dissipation performance. |
| **Channel Type** | Single N-channel | Single N-channel configuration is suitable for high-efficiency switching power supplies and control current applications. |
| **Drain-Source Voltage (VDS)** | 800V | Up to 800V drain-source voltage, suitable for high-voltage switching applications. |
| **Gate-Source Voltage (VGS)** | ±30V | Maximum gate-source voltage is ±30V, suitable for a variety of drive circuit designs. |
| **Threshold Voltage (Vth)** | 3.5V | Higher threshold voltage ensures stable operation of MOSFET under appropriate conditions. |
| **On-resistance (RDS(ON))** | 1100mΩ @ VGS=10V | The on-resistance is 1100mΩ at VGS=10V, suitable for medium current switching applications. |
| **Drain current (ID)** | 5A | Maximum drain current is 5A, suitable for low power or medium power applications. |
| **Technology type** | SJ_Multi-EPI | Use SJ_Multi-EPI technology to improve switching performance and reduce on-resistance. |
---
| **Parameter** | **Value** | **Description** |
|-------------------------|-----------------------------|--------------------------------------------------|
| **Package Type** | TO220F | TO220F package, suitable for high power applications, with good heat dissipation performance. |
| **Channel Type** | Single N-channel | Single N-channel configuration is suitable for high-efficiency switching power supplies and control current applications. |
| **Drain-Source Voltage (VDS)** | 800V | Up to 800V drain-source voltage, suitable for high-voltage switching applications. |
| **Gate-Source Voltage (VGS)** | ±30V | Maximum gate-source voltage is ±30V, suitable for a variety of drive circuit designs. |
| **Threshold Voltage (Vth)** | 3.5V | Higher threshold voltage ensures stable operation of MOSFET under appropriate conditions. |
| **On-resistance (RDS(ON))** | 1100mΩ @ VGS=10V | The on-resistance is 1100mΩ at VGS=10V, suitable for medium current switching applications. |
| **Drain current (ID)** | 5A | Maximum drain current is 5A, suitable for low power or medium power applications. |
| **Technology type** | SJ_Multi-EPI | Use SJ_Multi-EPI technology to improve switching performance and reduce on-resistance. |
---
Domain and module applications：
Application fields and module examples
1. **High-voltage power conversion and management**
STF6N80K5-VB is very suitable for high-voltage power conversion and power management applications such as power adapters, switching power supplies (SMPS) and uninterruptible power supplies (UPS) due to its high drain-source voltage of up to 800V. In these applications, the high-voltage withstand capability of MOSFET ensures the safety and stability of the power supply when handling high power.
2. **Industrial power converter**
In industrial power conversion systems, STF6N80K5-VB can be used in high-power conversion, DC to AC inverters and other equipment. Due to its high voltage and moderate current carrying capacity, it can provide stable power control in industrial environments and is suitable for fields such as wind power generation, solar power generation and electric vehicle charging systems.
3. **Electrical protection and high-voltage switch**
Due to its high-voltage tolerance, STF6N80K5-VB is also suitable for electrical protection equipment and high-voltage switch modules, such as overvoltage protection, leakage protection, etc. In the power system, it can be used to protect the switching elements in the circuit to prevent high-voltage current from damaging the equipment and provide stable and reliable protection functions.
4. **Home power system**
In the home power system, STF6N80K5-VB can be applied to the power management and control circuits of home appliances and smart home devices. Its high voltage capability and relatively low on-resistance make it very suitable for home power applications that require high safety standards to ensure the normal operation and safety of the equipment.
5. **Power module in the field of power electronics**
STF6N80K5-VB is suitable for switching power modules, voltage regulators and regulated power supplies in power electronic equipment. Due to its low on-resistance and stable switching performance, it can ensure high efficiency and long-term stable operation in high voltage environments. For example, power distribution systems, power amplifiers, power conversion modules, etc. can make full use of the excellent performance of this MOSFET.
6. **Automotive Electronics Applications**
In automotive electronics applications, STF6N80K5-VB can be used in battery management systems (BMS) and on-board power management units (PMU) of electric vehicles. Its high-voltage capability makes it suitable for controlling and managing the battery charging and discharging process under high-voltage environments to ensure the safety, stability and high efficiency of the battery.
Through its high voltage tolerance, stable conduction characteristics and low power consumption, STF6N80K5-VB MOSFET provides efficient and reliable power solutions in multiple fields and is widely used in high-voltage occasions such as power management, power conversion, industrial control and electrical protection.
1. **High-voltage power conversion and management**
STF6N80K5-VB is very suitable for high-voltage power conversion and power management applications such as power adapters, switching power supplies (SMPS) and uninterruptible power supplies (UPS) due to its high drain-source voltage of up to 800V. In these applications, the high-voltage withstand capability of MOSFET ensures the safety and stability of the power supply when handling high power.
2. **Industrial power converter**
In industrial power conversion systems, STF6N80K5-VB can be used in high-power conversion, DC to AC inverters and other equipment. Due to its high voltage and moderate current carrying capacity, it can provide stable power control in industrial environments and is suitable for fields such as wind power generation, solar power generation and electric vehicle charging systems.
3. **Electrical protection and high-voltage switch**
Due to its high-voltage tolerance, STF6N80K5-VB is also suitable for electrical protection equipment and high-voltage switch modules, such as overvoltage protection, leakage protection, etc. In the power system, it can be used to protect the switching elements in the circuit to prevent high-voltage current from damaging the equipment and provide stable and reliable protection functions.
4. **Home power system**
In the home power system, STF6N80K5-VB can be applied to the power management and control circuits of home appliances and smart home devices. Its high voltage capability and relatively low on-resistance make it very suitable for home power applications that require high safety standards to ensure the normal operation and safety of the equipment.
5. **Power module in the field of power electronics**
STF6N80K5-VB is suitable for switching power modules, voltage regulators and regulated power supplies in power electronic equipment. Due to its low on-resistance and stable switching performance, it can ensure high efficiency and long-term stable operation in high voltage environments. For example, power distribution systems, power amplifiers, power conversion modules, etc. can make full use of the excellent performance of this MOSFET.
6. **Automotive Electronics Applications**
In automotive electronics applications, STF6N80K5-VB can be used in battery management systems (BMS) and on-board power management units (PMU) of electric vehicles. Its high-voltage capability makes it suitable for controlling and managing the battery charging and discharging process under high-voltage environments to ensure the safety, stability and high efficiency of the battery.
Through its high voltage tolerance, stable conduction characteristics and low power consumption, STF6N80K5-VB MOSFET provides efficient and reliable power solutions in multiple fields and is widely used in high-voltage occasions such as power management, power conversion, industrial control and electrical protection.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
