中文
English
STF3N62K3-VB Product details
Back to previous pageProduct introduction：
STF3N62K3-VB Product Introduction
STF3N62K3-VB is a high-voltage single N-channel power MOSFET in TO220F package, designed for high voltage applications. The maximum drain-source voltage (VDS) of this MOSFET is 650V, which is suitable for power supplies and load switches that require high voltage tolerance. Its maximum drain current (ID) is 4A, which is suitable for applications with small and medium power currents. The threshold voltage (Vth) is 3.5V, ensuring stable switching characteristics. The on-resistance (RDS(ON)) of STF3N62K3-VB is 2560mΩ@VGS=10V. Although its on-resistance is relatively high, its lower current carrying capacity makes it more suitable for low-power and high-voltage applications. This MOSFET uses planar technology (Plannar), has good stability and reliability, and is suitable for use in a variety of electronic systems.
STF3N62K3-VB is a high-voltage single N-channel power MOSFET in TO220F package, designed for high voltage applications. The maximum drain-source voltage (VDS) of this MOSFET is 650V, which is suitable for power supplies and load switches that require high voltage tolerance. Its maximum drain current (ID) is 4A, which is suitable for applications with small and medium power currents. The threshold voltage (Vth) is 3.5V, ensuring stable switching characteristics. The on-resistance (RDS(ON)) of STF3N62K3-VB is 2560mΩ@VGS=10V. Although its on-resistance is relatively high, its lower current carrying capacity makes it more suitable for low-power and high-voltage applications. This MOSFET uses planar technology (Plannar), has good stability and reliability, and is suitable for use in a variety of electronic systems.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | 2560mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
STF3N62K3-VB Detailed parameter description
| **Parameter** | **Specification** | **Description** |
|------------------------|------------------------|-----------------------------------------------------------|
| **Package** | TO220F | TO220F package, provides excellent heat dissipation performance, suitable for high power applications|
| **Configuration** | Single N-channel | Single N-channel configuration, suitable for high voltage and low power current applications|
| **Drain-source voltage (VDS)** | 650V | Maximum drain-source voltage 650V, suitable for high voltage applications such as switching power supplies, power regulation systems|
| **Gate-source voltage (VGS)** | ±30V | Maximum gate-source voltage is ±30V, able to withstand higher drive voltages|
| **Threshold voltage (Vth)** | 3.5V | Minimum gate-source voltage to start conduction, ensuring stable MOSFET switching|
| **On-resistance (RDS(ON))** | 2560mΩ @ VGS=10V | Higher on-resistance, suitable for low power, low current applications|
| **Drain current (ID)** | 4A | Maximum drain current is 4A, suitable for circuits with lower current requirements|
| **Technology type** | Plannar | Uses planar technology (Plannar), providing better reliability and stability|
| **Parameter** | **Specification** | **Description** |
|------------------------|------------------------|-----------------------------------------------------------|
| **Package** | TO220F | TO220F package, provides excellent heat dissipation performance, suitable for high power applications|
| **Configuration** | Single N-channel | Single N-channel configuration, suitable for high voltage and low power current applications|
| **Drain-source voltage (VDS)** | 650V | Maximum drain-source voltage 650V, suitable for high voltage applications such as switching power supplies, power regulation systems|
| **Gate-source voltage (VGS)** | ±30V | Maximum gate-source voltage is ±30V, able to withstand higher drive voltages|
| **Threshold voltage (Vth)** | 3.5V | Minimum gate-source voltage to start conduction, ensuring stable MOSFET switching|
| **On-resistance (RDS(ON))** | 2560mΩ @ VGS=10V | Higher on-resistance, suitable for low power, low current applications|
| **Drain current (ID)** | 4A | Maximum drain current is 4A, suitable for circuits with lower current requirements|
| **Technology type** | Plannar | Uses planar technology (Plannar), providing better reliability and stability|
Domain and module applications：
Typical Applications and Modules
1. **Low Power Switch**
STF3N62K3-VB is suitable for low power power switch applications. Its higher on-resistance makes it more suitable for low current power regulation and switch control circuits. With a maximum drain current of 4A, it is very suitable for small and medium power systems, such as power switches in TV power modules, adapters, battery chargers and other devices. Due to its high voltage capability of 650V, this MOSFET can effectively handle current loads in high voltage application scenarios.
2. **Battery Management System (BMS)**
In the battery management system, STF3N62K3-VB can be used as a power switch controller to manage the battery charging and discharging process. Its lower drain current capability makes it suitable for smaller current battery pack management, while its higher voltage capability (650V) can adapt to the requirements of different types of batteries. It helps to efficiently control the battery charging current while ensuring stable system operation.
3. **Control modules in home appliances**
This MOSFET can be used in power control modules in home appliances, especially low-power demand devices such as small home appliances, control circuit boards and power modules. Due to its high voltage resistance and stable switching characteristics, the STF3N62K3-VB can effectively manage the power supply of small home appliances and ensure their safe and reliable operation.
4. **Automotive electronics applications**
In automotive electronics systems, the STF3N62K3-VB is suitable for battery voltage management, on-board power systems, and low-power control circuits. Its maximum voltage of 650V and low current requirements make it particularly suitable for low-power switch control and power management modules in electric vehicles or hybrid vehicles.
5. **Power management in communication equipment**
STF3N62K3-VB is also widely used in communication equipment, such as base station power supplies, router power modules, etc. Due to its high drain-source voltage (650V) and low current carrying capacity, it can effectively manage the power supply current in communication equipment and provide stable operating performance.
1. **Low Power Switch**
STF3N62K3-VB is suitable for low power power switch applications. Its higher on-resistance makes it more suitable for low current power regulation and switch control circuits. With a maximum drain current of 4A, it is very suitable for small and medium power systems, such as power switches in TV power modules, adapters, battery chargers and other devices. Due to its high voltage capability of 650V, this MOSFET can effectively handle current loads in high voltage application scenarios.
2. **Battery Management System (BMS)**
In the battery management system, STF3N62K3-VB can be used as a power switch controller to manage the battery charging and discharging process. Its lower drain current capability makes it suitable for smaller current battery pack management, while its higher voltage capability (650V) can adapt to the requirements of different types of batteries. It helps to efficiently control the battery charging current while ensuring stable system operation.
3. **Control modules in home appliances**
This MOSFET can be used in power control modules in home appliances, especially low-power demand devices such as small home appliances, control circuit boards and power modules. Due to its high voltage resistance and stable switching characteristics, the STF3N62K3-VB can effectively manage the power supply of small home appliances and ensure their safe and reliable operation.
4. **Automotive electronics applications**
In automotive electronics systems, the STF3N62K3-VB is suitable for battery voltage management, on-board power systems, and low-power control circuits. Its maximum voltage of 650V and low current requirements make it particularly suitable for low-power switch control and power management modules in electric vehicles or hybrid vehicles.
5. **Power management in communication equipment**
STF3N62K3-VB is also widely used in communication equipment, such as base station power supplies, router power modules, etc. Due to its high drain-source voltage (650V) and low current carrying capacity, it can effectively manage the power supply current in communication equipment and provide stable operating performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
