中文
English
STF21NM60N-VB Product details
Back to previous pageProduct introduction：
Product Introduction
**STF21NM60N-VB** is a single N-channel power MOSFET based on SJ_Multi-EPI technology and uses a TO220F package. This product has a drain-source voltage (VDS) of 650V and a maximum drain current (ID) of 20A, and is suitable for high-voltage power conversion and control systems. Its on-resistance (RDS(ON)) is 160mΩ (at VGS=10V), and the low on-resistance gives it low power loss and excellent thermal performance in high-current applications. **STF21NM60N-VB** is designed for applications that require high voltage, high current and high-efficiency switching, and is widely used in switching power supplies, motor drives, battery management systems (BMS), uninterruptible power supplies (UPS) and other power electronic systems.
---
**STF21NM60N-VB** is a single N-channel power MOSFET based on SJ_Multi-EPI technology and uses a TO220F package. This product has a drain-source voltage (VDS) of 650V and a maximum drain current (ID) of 20A, and is suitable for high-voltage power conversion and control systems. Its on-resistance (RDS(ON)) is 160mΩ (at VGS=10V), and the low on-resistance gives it low power loss and excellent thermal performance in high-current applications. **STF21NM60N-VB** is designed for applications that require high voltage, high current and high-efficiency switching, and is widely used in switching power supplies, motor drives, battery management systems (BMS), uninterruptible power supplies (UPS) and other power electronic systems.
---
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
| Parameter | Value | Unit | Description|
|---------------------|----------------------------------|------------|-----------------------------------------|
| **Package Type** | TO220F | — | High power package, suitable for applications with high current and high heat dissipation requirements. |
| **Channel Type** | Single N-channel| — | Provides efficient switching performance and low on-resistance. |
| **Drain-Source Voltage (VDS)** | 650V | V | Maximum drain-source voltage, suitable for high voltage power management systems. |
| **Gate-Source Voltage (VGS)** | ±30V | V | Supports gate-source voltage of ±30V to ensure stable switching performance. |
| **Threshold Voltage (Vth)** | 3.5V | V | The starting voltage of the MOSFET from off to on, ensuring fast turn-on. |
| **On-resistance (RDS(ON))** | 160mΩ@VGS=10V | Ω | On-resistance at VGS=10V, low RDS(ON) means low power loss. |
| **Drain current (ID)** | 20A | A | Maximum continuous drain current, suitable for medium and high power supply applications. |
| **Technology** | SJ_Multi-EPI | — | Adopt SJ_Multi-EPI technology, providing better switching performance and low on-resistance. |
| **Operating temperature range** | -55 ~ 150°C | °C | Withstands operating temperature range to adapt to various working environments. |
---
| Parameter | Value | Unit | Description|
|---------------------|----------------------------------|------------|-----------------------------------------|
| **Package Type** | TO220F | — | High power package, suitable for applications with high current and high heat dissipation requirements. |
| **Channel Type** | Single N-channel| — | Provides efficient switching performance and low on-resistance. |
| **Drain-Source Voltage (VDS)** | 650V | V | Maximum drain-source voltage, suitable for high voltage power management systems. |
| **Gate-Source Voltage (VGS)** | ±30V | V | Supports gate-source voltage of ±30V to ensure stable switching performance. |
| **Threshold Voltage (Vth)** | 3.5V | V | The starting voltage of the MOSFET from off to on, ensuring fast turn-on. |
| **On-resistance (RDS(ON))** | 160mΩ@VGS=10V | Ω | On-resistance at VGS=10V, low RDS(ON) means low power loss. |
| **Drain current (ID)** | 20A | A | Maximum continuous drain current, suitable for medium and high power supply applications. |
| **Technology** | SJ_Multi-EPI | — | Adopt SJ_Multi-EPI technology, providing better switching performance and low on-resistance. |
| **Operating temperature range** | -55 ~ 150°C | °C | Withstands operating temperature range to adapt to various working environments. |
---
Domain and module applications：
Application fields and module examples
**STF21NM60N-VB** is a 650V, 20A high-performance power MOSFET, which is widely used in a variety of high-voltage power electronic systems. The following are typical application fields of this product:
1. **Switching Power Supply (SMPS)**
**STF21NM60N-VB** plays an important role as a switching element in the switching power supply, and is suitable for high-voltage AC-DC or DC-DC conversion. Its 650V withstand voltage capability and 160mΩ low on-resistance enable it to have low power consumption and high-efficiency conversion in high-efficiency power supply applications, and is widely used in computer power supplies, TV power supplies, LED drive power supplies, etc.
2. **Motor drive system**
In the motor drive system, **STF21NM60N-VB** can be used to control the drive current of medium and high power motors. Its high withstand voltage and high current capability make it particularly suitable for power tools, electric vehicle drives, inverters and elevator drive systems, etc.
3. **Battery Management System (BMS)**
**STF21NM60N-VB** can be widely used in battery management systems, especially in electric vehicles (EV) and energy storage systems for efficient battery charge and discharge management. Its low on-resistance characteristics help reduce power losses and improve the overall efficiency of the system.
4. **Uninterruptible Power Supply (UPS)**
In UPS (Uninterruptible Power Supply) systems, **STF21NM60N-VB** is an ideal switching element that can quickly provide backup power when power is interrupted. Its 650V withstand voltage and high current carrying capacity ensure the reliability of UPS systems in various applications.
5. **Solar Inverter**
**STF21NM60N-VB** is suitable for solar inverters, which are responsible for converting the DC power generated by solar cells into AC power. Due to its high voltage tolerance and efficient switching performance, this MOSFET can significantly improve the overall efficiency of solar power generation systems.
6. **High-power power electronic modules**
Due to its good high-voltage characteristics and switching performance, **STF21NM60N-VB** can play a key role in power conversion and power management applications. Especially in power electronic modules, high-voltage and high-current conversion devices are required. This MOSFET provides stable performance and is suitable for various power conversion systems.
In summary, **STF21NM60N-VB** is a 650V, 20A high-performance MOSFET suitable for switching power supplies, motor drives, battery management, solar inverters, uninterruptible power supplies and other high-voltage power electronics fields. Its low on-resistance, efficient switching and high voltage withstand characteristics enable it to provide excellent performance in a variety of applications to meet the needs of industrial and commercial power electronic systems.
**STF21NM60N-VB** is a 650V, 20A high-performance power MOSFET, which is widely used in a variety of high-voltage power electronic systems. The following are typical application fields of this product:
1. **Switching Power Supply (SMPS)**
**STF21NM60N-VB** plays an important role as a switching element in the switching power supply, and is suitable for high-voltage AC-DC or DC-DC conversion. Its 650V withstand voltage capability and 160mΩ low on-resistance enable it to have low power consumption and high-efficiency conversion in high-efficiency power supply applications, and is widely used in computer power supplies, TV power supplies, LED drive power supplies, etc.
2. **Motor drive system**
In the motor drive system, **STF21NM60N-VB** can be used to control the drive current of medium and high power motors. Its high withstand voltage and high current capability make it particularly suitable for power tools, electric vehicle drives, inverters and elevator drive systems, etc.
3. **Battery Management System (BMS)**
**STF21NM60N-VB** can be widely used in battery management systems, especially in electric vehicles (EV) and energy storage systems for efficient battery charge and discharge management. Its low on-resistance characteristics help reduce power losses and improve the overall efficiency of the system.
4. **Uninterruptible Power Supply (UPS)**
In UPS (Uninterruptible Power Supply) systems, **STF21NM60N-VB** is an ideal switching element that can quickly provide backup power when power is interrupted. Its 650V withstand voltage and high current carrying capacity ensure the reliability of UPS systems in various applications.
5. **Solar Inverter**
**STF21NM60N-VB** is suitable for solar inverters, which are responsible for converting the DC power generated by solar cells into AC power. Due to its high voltage tolerance and efficient switching performance, this MOSFET can significantly improve the overall efficiency of solar power generation systems.
6. **High-power power electronic modules**
Due to its good high-voltage characteristics and switching performance, **STF21NM60N-VB** can play a key role in power conversion and power management applications. Especially in power electronic modules, high-voltage and high-current conversion devices are required. This MOSFET provides stable performance and is suitable for various power conversion systems.
In summary, **STF21NM60N-VB** is a 650V, 20A high-performance MOSFET suitable for switching power supplies, motor drives, battery management, solar inverters, uninterruptible power supplies and other high-voltage power electronics fields. Its low on-resistance, efficient switching and high voltage withstand characteristics enable it to provide excellent performance in a variety of applications to meet the needs of industrial and commercial power electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
