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STF12N50U-VB Product details
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1. STF12N50U-VB Product Introduction
STF12N50U-VB is a single N-channel power MOSFET in TO220F package, designed for high voltage and high current applications. It has a drain-source withstand voltage (VDS) of 650V and a maximum drain current (ID) of 12A, suitable for power electronic systems that require efficient switching and current control. The on-resistance of this MOSFET is 680mΩ (VGS=10V), which can ensure low power loss and high-efficiency operation. Its turn-on voltage (Vth) is 3.5V, which is suitable for use in systems with high gate drive voltage. STF12N50U-VB uses Plannar technology to ensure its high performance and stability. This device is widely used in industrial power supplies, power tools, inverters and other high-voltage and high-efficiency power electronic equipment.
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STF12N50U-VB is a single N-channel power MOSFET in TO220F package, designed for high voltage and high current applications. It has a drain-source withstand voltage (VDS) of 650V and a maximum drain current (ID) of 12A, suitable for power electronic systems that require efficient switching and current control. The on-resistance of this MOSFET is 680mΩ (VGS=10V), which can ensure low power loss and high-efficiency operation. Its turn-on voltage (Vth) is 3.5V, which is suitable for use in systems with high gate drive voltage. STF12N50U-VB uses Plannar technology to ensure its high performance and stability. This device is widely used in industrial power supplies, power tools, inverters and other high-voltage and high-efficiency power electronic equipment.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | 680mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. STF12N50U-VB Detailed parameter description
| **Parameter category** | **Parameter value** | **Description** |
|-------------------|-------------------------|---------------------------------|
| **Package** | TO220F | Standard TO220F package, suitable for high power applications|
| **Configuration** | Single N-channel | Suitable for unipolar design of conventional power circuits|
| **Drain-source voltage (VDS)** | 650V | High voltage carrying capacity, suitable for high voltage power supply system|
| **Gate-source voltage (VGS)** | ±30V | Wide gate drive voltage range, suitable for various control methods|
| **Turning voltage (Vth)** | 3.5V | Higher turning voltage, suitable for applications requiring higher driving voltage|
| **On-resistance (RDS(ON))** | 680mΩ @ VGS=10V | Low on-resistance for higher efficiency and lower power loss|
| **Maximum drain current (ID)** | 12A | High current carrying capability for high power loads|
| **Technology** | Plannar | Excellent current control performance and low loss using Plannar technology|
| **Operating frequency** | High frequency | Supports high frequency switching operation for fast switching applications|
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| **Parameter category** | **Parameter value** | **Description** |
|-------------------|-------------------------|---------------------------------|
| **Package** | TO220F | Standard TO220F package, suitable for high power applications|
| **Configuration** | Single N-channel | Suitable for unipolar design of conventional power circuits|
| **Drain-source voltage (VDS)** | 650V | High voltage carrying capacity, suitable for high voltage power supply system|
| **Gate-source voltage (VGS)** | ±30V | Wide gate drive voltage range, suitable for various control methods|
| **Turning voltage (Vth)** | 3.5V | Higher turning voltage, suitable for applications requiring higher driving voltage|
| **On-resistance (RDS(ON))** | 680mΩ @ VGS=10V | Low on-resistance for higher efficiency and lower power loss|
| **Maximum drain current (ID)** | 12A | High current carrying capability for high power loads|
| **Technology** | Plannar | Excellent current control performance and low loss using Plannar technology|
| **Operating frequency** | High frequency | Supports high frequency switching operation for fast switching applications|
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Domain and module applications：
### 3. Application fields and modules
#### 1. **High voltage power converter**
STF12N50U-VB is suitable for various high voltage power conversion applications, such as AC-DC converters, DC-DC converters, etc. This MOSFET can stably handle high voltage (650V) and has low on-resistance and high switching efficiency, which can significantly reduce power loss in the power conversion process and improve the overall efficiency of the system.
#### 2. **Motor drive control**
In the motor drive modules of power tools, home appliances and industrial equipment, STF12N50U-VB can be used as an efficient switching element for the motor. Its 12A maximum drain current carrying capacity and low on-resistance make it very suitable for use in motor drive circuits, especially for scenarios with high-efficiency motor control and low power consumption operation.
#### 3. **Inverter and Solar System**
Since the STF12N50U-VB has a drain-source withstand voltage of 650V, it is suitable for power conversion in photovoltaic inverters and other renewable energy systems. Its excellent switching performance and low on-resistance enable it to efficiently perform DC to AC power conversion and is widely used in inverters and power conditioning modules in solar power generation systems.
#### 4. **Power Factor Correction (PFC) Circuit**
In the power factor correction circuit, the STF12N50U-VB, as an efficient switching element, can help the power system achieve a higher power factor, reduce energy waste, and improve power efficiency. The high voltage withstand capability and low on-resistance of this MOSFET make it particularly suitable for power factor correction applications.
#### 5. **Power Electronics System**
In various high-voltage power electronic systems, such as power protection circuits, inverters, etc., STF12N50U-VB can provide stable current switching functions to ensure stable system operation and reduce power loss. Especially in situations where high voltage and high current are required, this MOSFET provides good performance support.
#### 6. **Power Adapter and Charging Equipment**
This MOSFET is also very suitable for high-power power adapters and charging equipment, especially those that require high voltage handling and low power consumption. Its high efficiency and low on-resistance make it perform well in charging systems and can provide fast and stable charging current.
From the above application areas, it can be seen that STF12N50U-VB is a high-efficiency MOSFET with high voltage, high current handling capability and low power loss, which is widely used in power systems, power tools, motor drives, power electronic equipment and other high-demand application areas.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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