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STF11NM80-VB Product details

Product introduction:

STF11NM80-VB Product Introduction

STF11NM80-VB is an N-channel power MOSFET using SJ_Multi-EPI technology, packaged in TO220F. This MOSFET provides a drain-source voltage (VDS) of 800V and a gate-source voltage limit (VGS) of 30V, suitable for high-voltage, high-efficiency power conversion and switch control applications. Its maximum drain current (ID) is 15A, and its on-resistance (RDS(ON)) is 370mΩ, showing low switching losses and heat accumulation at VGS=10V. With high voltage resistance and good thermal management characteristics, STF11NM80-VB is an ideal choice for industrial applications such as high-voltage power supplies, inverters, motor drives, etc., to ensure efficient operation and reliability of the system.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 800V 3.5V 15A 370mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 800V 3.5V 15A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 800V 3.5V 15A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
STF11NM80-VB Detailed Parameter Description

| **Parameter** | **Value** | **Description** |
|-------------------------|-----------------------------|--------------------------------------------------|
| **Package Type** | TO220F | TO220F package provides good heat dissipation and is suitable for high power applications. |
| **Channel Type** | Single N-channel | Suitable for high voltage, high current switch control, with excellent switching characteristics. |
| **Drain-Source Voltage (VDS)** | 800V | High voltage tolerance, suitable for high voltage power conversion and control applications. |
| **Gate-Source Voltage (VGS)** | ±30V | Supports ±30V gate-source voltage, widely used in a variety of control circuits. |
| **Threshold Voltage (Vth)** | 3.5V | Low threshold voltage is suitable for precise control and low voltage startup. |
| **On-resistance (RDS(ON))** | 370mΩ @ VGS=10V | At VGS=10V, the on-resistance is 370mΩ, suitable for medium and high current switching applications. |
| **Drain current (ID)** | 15A | Maximum drain current is 15A, suitable for high current transmission. |
| **Technology type** | SJ_Multi-EPI | Using SJ_Multi-EPI technology, with lower on-resistance and high performance. |

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Domain and module applications:

Applications and module examples

1. **High-voltage power converter**
The 800V drain-source voltage of STF11NM80-VB makes it very suitable for high-voltage power converters, especially in power systems that require high voltage tolerance and high efficiency. It can be widely used in AC/DC converters, DC/DC converters, switching power supplies (SMPS) and other fields, providing low-loss and efficient switching performance during power transmission and conversion.

2. **Solar inverter**
In solar photovoltaic inverters, STF11NM80-VB is suitable for key components of DC/AC conversion due to its high voltage tolerance and high current carrying capacity. This MOSFET can effectively realize the conversion of direct current (DC) to alternating current (AC), ensuring efficient operation and stability of the system.

3. **Motor drive system**
STF11NM80-VB is suitable for industrial motor control systems, especially for variable frequency drives and electric vehicle (EV) motor drive systems. Its high voltage resistance and low on-resistance help provide efficient and precise motor control while reducing power loss and improving the overall efficiency of the system.

4. **Power inverter**
STF11NM80-VB is an ideal switching element in power inverters (VFDs), especially in applications that require high voltage and high current control, such as industrial drives, HVAC systems, etc. Its efficient switching performance and low on-resistance can improve the efficiency of the inverter, reduce energy loss, and ensure long-term stable operation.

5. **High-voltage switching power supply**
STF11NM80-VB is widely used in high-voltage switching power supplies (such as computer power supplies, communication power supplies, and server power supplies). Its 800V drain-source voltage and low on-resistance can ensure that the power supply system operates at high efficiency and high stability, especially in demanding high-voltage power management.

6. **Battery Management System (BMS)**
In electric vehicles (EV) and renewable energy storage systems, STF11NM80-VB can be used as a switching device in the battery management system. Its high voltage capability and high current carrying capacity enable it to efficiently manage the battery charging and discharging process, ensure the safety of the battery and extend its service life.

7. **Reactive Power Compensation System**
In the reactive power compensation system, STF11NM80-VB can be used as a switching element for high-voltage reactive compensation modules. Its excellent withstand voltage characteristics and high switching frequency are suitable for optimizing grid stability and power factor control, improving the overall efficiency of the power system.

Through its powerful performance characteristics, STF11NM80-VB has been widely used in multiple high-voltage and high-efficiency fields. It can effectively improve system efficiency, reduce energy loss, and ensure high stability and long-term reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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