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STF10NM65N-VB Product details

Product introduction:

STF10NM65N-VB Product Introduction

STF10NM65N-VB is a high-performance N-type MOSFET in a **TO220F** package with high voltage tolerance and excellent switching characteristics. Its **maximum drain-source voltage (VDS)** can reach **650V**, which is suitable for high voltage applications; its **maximum drain current (ID)** is **20A**, which can handle high current loads. The device has a low **on-resistance (RDS(ON) = 320mΩ @ VGS = 10V)**, which can effectively reduce power loss and provide good current transfer efficiency. STF10NM65N-VB uses **Plannar technology**, which enables it to maintain stable switching performance and low power consumption at higher voltages and currents. This MOSFET is widely used in switching power supplies, power amplifiers, industrial power supplies and other fields.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 650V 3.5V 20A 320mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 650V 3.5V 20A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 650V 3.5V 20A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
STF10NM65N-VB Detailed parameter description

| **Parameter** | **Value** | **Description** |
|------------------------|-------------------------------------|-------------------------------------------------|
| **Package type** | TO220F | Provides higher power heat dissipation capability, suitable for high-power switching applications. |
| **Channel type** | Single-N | Single channel design, suitable for common power switching applications. |
| **Drain-source voltage (VDS)** | 650V | Suitable for high-voltage working environment, ensuring safety in high-voltage applications. |
| **Gate-source voltage (VGS)** | ±30V | Maximum gate drive voltage, providing strong gate drive capability. |
| **Throw-on voltage (Vth)** | 3.5V | The turn-on voltage is low, ensuring that the MOSFET can still switch normally under low gate voltage. |
| **On-resistance (RDS(ON))** | 320mΩ @ VGS = 10V | Low on-resistance reduces power loss during switching and improves system efficiency. |
| **Drain current (ID)** | 20A | Maximum drain current, suitable for high current load applications. |
| **Technology type** | Plannar | Planar technology with higher switching speed and lower switching loss. |

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Domain and module applications:

Application fields and module examples of STF10NM65N-VB

1. **Switching Power Supplies**
STF10NM65N-VB can be widely used in switching power supplies (SMPS), especially high voltage and high current power supply systems. Its high voltage tolerance and low on-resistance make it very suitable for use as a switching element in power conversion modules, providing efficient voltage conversion and reducing energy loss.

2. **Inverters**
In inverter applications, STF10NM65N-VB, as a switching device, can handle higher voltages and high currents, and is suitable for inverters of renewable energy such as solar energy and wind energy. Due to its high voltage resistance, it can work stably in a high voltage environment and ensure the high efficiency and long life of the inverter.

3. **Electric Vehicle Power Systems**
STF10NM65N-VB can be used as a switch component in the battery management system of electric vehicles. Its high current and high voltage carrying capacity makes it suitable for driving the electric motor of electric vehicles and controlling the battery charging and discharging process, ensuring the stability and efficiency of battery charging.

4. **Industrial Power Modules**
In industrial applications, STF10NM65N-VB can be used in various power modules and equipment, such as welding machines, AC motor drive systems, etc. Its high voltage tolerance and high current handling capabilities enable it to maintain stability in high-load working environments, improving the performance and reliability of industrial equipment.

5. **Power Amplifiers**
In power amplifier design, STF10NM65N-VB is suitable for high-power RF amplifiers due to its low on-resistance and high voltage tolerance, especially in applications requiring high power output, such as wireless communications and broadcasting equipment. It can ensure stable operation at high power and high frequency, ensuring system efficiency and signal quality.

6. **Battery Chargers**
STF10NM65N-VB can be used in battery chargers, especially for fast charging systems. Its high current carrying capacity enables it to work effectively in high-power charging environments, ensuring fast and safe battery charging, and is suitable for consumer electronics, medical equipment and other fields.

7. **High-efficiency Power Conversion**
Due to the high voltage tolerance and low on-resistance of STF10NM65N-VB, it is particularly suitable for fields that require high-efficiency power conversion, such as data center power systems, high-efficiency lighting systems, etc. Its excellent performance can reduce system power loss and improve overall energy efficiency.

Through its high voltage resistance, low on-resistance and strong current carrying capacity, STF10NM65N-VB performs well in multiple high-efficiency and high-power density power and switch applications, especially for power management, industrial control, electric vehicles and other systems that require high reliability and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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