中文
English
STD9NM60N-VB Product details
Back to previous pageProduct introduction：
STD9NM60N-VB Product Introduction
STD9NM60N-VB is an N-channel power MOSFET using SJ_Multi-EPI technology, packaged in TO252. It has a drain-source breakdown voltage (VDS) of 650V, a gate-source voltage limit (VGS) of 30V, and a maximum drain current (ID) of 7A. The on-resistance (RDS(ON)) of this MOSFET is 700mΩ (at VGS=10V) and a lower threshold voltage (Vth) of 3.5V, making it ideal for high-voltage, high-current power management and switching power applications. The STD9NM60N-VB provides excellent switching performance and low conduction losses through advanced SJ_Multi-EPI technology, making it outstanding in applications requiring high efficiency and high voltage tolerance.
---
STD9NM60N-VB is an N-channel power MOSFET using SJ_Multi-EPI technology, packaged in TO252. It has a drain-source breakdown voltage (VDS) of 650V, a gate-source voltage limit (VGS) of 30V, and a maximum drain current (ID) of 7A. The on-resistance (RDS(ON)) of this MOSFET is 700mΩ (at VGS=10V) and a lower threshold voltage (Vth) of 3.5V, making it ideal for high-voltage, high-current power management and switching power applications. The STD9NM60N-VB provides excellent switching performance and low conduction losses through advanced SJ_Multi-EPI technology, making it outstanding in applications requiring high efficiency and high voltage tolerance.
---
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
STD9NM60N-VB Detailed Parameter Description
| **Parameter** | **Value** | **Description** |
|-------------------------|----------------------------|---------------------------------------------------|
| **Package Type** | TO252 | TO252 package is suitable for power applications and has good thermal management performance. |
| **Channel Type** | Single N-channel | Efficient N-channel design, suitable for high voltage, high current switching applications. |
| **Drain-Source Voltage (VDS)** | 650V | High voltage tolerance, suitable for applications such as high voltage power conversion and motor control. |
| **Gate-Source Voltage (VGS)** | ±30V | Suitable for high voltage gate drive control to ensure stable operation. |
| **Threshold Voltage (Vth)** | 3.5V | Lower threshold voltage, suitable for control systems with low voltage startup. |
| **On-resistance (RDS(ON))** | 700mΩ @ VGS=10V | At VGS=10V, it has a higher on-resistance for medium current applications. |
| **Drain current (ID)** | 7A | Maximum drain current is 7A, suitable for medium current applications. |
| **Technology type** | SJ_Multi-EPI | Adopts multi-junction EPI technology to optimize switching performance and power efficiency. |
---
| **Parameter** | **Value** | **Description** |
|-------------------------|----------------------------|---------------------------------------------------|
| **Package Type** | TO252 | TO252 package is suitable for power applications and has good thermal management performance. |
| **Channel Type** | Single N-channel | Efficient N-channel design, suitable for high voltage, high current switching applications. |
| **Drain-Source Voltage (VDS)** | 650V | High voltage tolerance, suitable for applications such as high voltage power conversion and motor control. |
| **Gate-Source Voltage (VGS)** | ±30V | Suitable for high voltage gate drive control to ensure stable operation. |
| **Threshold Voltage (Vth)** | 3.5V | Lower threshold voltage, suitable for control systems with low voltage startup. |
| **On-resistance (RDS(ON))** | 700mΩ @ VGS=10V | At VGS=10V, it has a higher on-resistance for medium current applications. |
| **Drain current (ID)** | 7A | Maximum drain current is 7A, suitable for medium current applications. |
| **Technology type** | SJ_Multi-EPI | Adopts multi-junction EPI technology to optimize switching performance and power efficiency. |
---
Domain and module applications：
Application areas and module examples
1. **High-voltage power converter**
The 650V drain-source voltage of STD9NM60N-VB makes it very suitable for high-voltage power converters, such as AC/DC power supplies, DC/DC converters, UPS (uninterruptible power supply systems), etc. Due to its high-voltage tolerance and low on-resistance, it can provide efficient power conversion, reduce energy loss and improve overall system performance.
2. **Motor drive system**
In the motor drive system, STD9NM60N-VB provides efficient switching and control capabilities. It can efficiently regulate the drive current of the motor, and is particularly suitable for industrial motors, household appliance motor drives, and automotive motor drive systems that require high voltage input and high current output.
3. **Inverter system**
Due to its 650V withstand voltage characteristics, the STD9NM60N-VB is very suitable for inverter systems, especially for DC/AC conversion in photovoltaic systems, wind power generation systems, etc. Its low on-resistance and fast switching performance help improve the efficiency and reliability of the inverter, and adapt to the needs of high-voltage conversion and stable output.
4. **Battery Management System (BMS)**
In the battery management system, the STD9NM60N-VB can be used to control the charging and discharging process of the battery, especially in electric vehicles and energy storage systems. Its high-voltage withstand capability and low conduction loss help improve the efficiency of battery management, reduce power loss, and ensure the safety and long-term stability of the system.
5. **Industrial control system**
This MOSFET can be widely used in fields such as industrial power supplies, inverters and servo motor control, especially in power conversion and precision current control systems. Its high voltage and high current carrying capacity ensures stable operation in harsh industrial environments and is suitable for applications with high performance requirements such as factory automation and robot control.
With its 650V high voltage tolerance, low on-resistance and efficient switching performance, the STD9NM60N-VB is widely used in high voltage and high current applications such as power management, motor drive, inverter system, battery management and industrial automation.
1. **High-voltage power converter**
The 650V drain-source voltage of STD9NM60N-VB makes it very suitable for high-voltage power converters, such as AC/DC power supplies, DC/DC converters, UPS (uninterruptible power supply systems), etc. Due to its high-voltage tolerance and low on-resistance, it can provide efficient power conversion, reduce energy loss and improve overall system performance.
2. **Motor drive system**
In the motor drive system, STD9NM60N-VB provides efficient switching and control capabilities. It can efficiently regulate the drive current of the motor, and is particularly suitable for industrial motors, household appliance motor drives, and automotive motor drive systems that require high voltage input and high current output.
3. **Inverter system**
Due to its 650V withstand voltage characteristics, the STD9NM60N-VB is very suitable for inverter systems, especially for DC/AC conversion in photovoltaic systems, wind power generation systems, etc. Its low on-resistance and fast switching performance help improve the efficiency and reliability of the inverter, and adapt to the needs of high-voltage conversion and stable output.
4. **Battery Management System (BMS)**
In the battery management system, the STD9NM60N-VB can be used to control the charging and discharging process of the battery, especially in electric vehicles and energy storage systems. Its high-voltage withstand capability and low conduction loss help improve the efficiency of battery management, reduce power loss, and ensure the safety and long-term stability of the system.
5. **Industrial control system**
This MOSFET can be widely used in fields such as industrial power supplies, inverters and servo motor control, especially in power conversion and precision current control systems. Its high voltage and high current carrying capacity ensures stable operation in harsh industrial environments and is suitable for applications with high performance requirements such as factory automation and robot control.
With its 650V high voltage tolerance, low on-resistance and efficient switching performance, the STD9NM60N-VB is widely used in high voltage and high current applications such as power management, motor drive, inverter system, battery management and industrial automation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
