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STD9N60M2-VB Product details
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STD9N60M2-VB Product Introduction
STD9N60M2-VB is a high-performance N-channel power MOSFET in TO252 package, suitable for switching applications requiring high voltage and high efficiency. This MOSFET uses SJ_Multi-EPI technology and has excellent voltage resistance and low on-resistance. It has a rated drain-source voltage of 650V, suitable for high-voltage power management applications, and can handle a drain current of up to 7A. It is widely used in high-efficiency systems such as industrial control, inverters, and power modules. The low on-resistance design improves the power conversion efficiency and reduces heat loss, ensuring its stable operation in harsh working environments.
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STD9N60M2-VB is a high-performance N-channel power MOSFET in TO252 package, suitable for switching applications requiring high voltage and high efficiency. This MOSFET uses SJ_Multi-EPI technology and has excellent voltage resistance and low on-resistance. It has a rated drain-source voltage of 650V, suitable for high-voltage power management applications, and can handle a drain current of up to 7A. It is widely used in high-efficiency systems such as industrial control, inverters, and power modules. The low on-resistance design improves the power conversion efficiency and reduces heat loss, ensuring its stable operation in harsh working environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed product parameter description
| **Parameter** | **Value** | **Description** |
|----------------------|---------------------------------|-------------------------------------------------------------|
| **Package Type** | TO252 | Suitable for space-constrained and demanding power conversion applications, with good heat dissipation performance. |
| **Configuration** | Single N-channel | Single N-channel structure, suitable for standard power switching applications. |
| **Drain-Source Voltage (VDS)** | 650V | High withstand voltage design, suitable for high voltage power management and power switching systems. |
| **Gate-Source Voltage (VGS)** | ±30V | Supports a wide gate-source voltage range, compatible with a variety of drive circuits. |
| **Turning Voltage (Vth)** | 3.5V | Ensures that the MOSFET is turned on at a lower gate-source voltage, providing reliable switching control. |
| **On-resistance (RDS(ON))** | 700mΩ @ VGS=10V | Provides lower on-resistance at higher gate voltages, reducing power loss during switching. |
| **Maximum drain current (ID)** | 7A | Suitable for medium power loads, capable of effectively handling 7A current requirements. |
| **Technology** | SJ_Multi-EPI | Super junction multi-layer EPI technology provides excellent voltage resistance and low on-resistance, improving switching efficiency and reliability. |
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| **Parameter** | **Value** | **Description** |
|----------------------|---------------------------------|-------------------------------------------------------------|
| **Package Type** | TO252 | Suitable for space-constrained and demanding power conversion applications, with good heat dissipation performance. |
| **Configuration** | Single N-channel | Single N-channel structure, suitable for standard power switching applications. |
| **Drain-Source Voltage (VDS)** | 650V | High withstand voltage design, suitable for high voltage power management and power switching systems. |
| **Gate-Source Voltage (VGS)** | ±30V | Supports a wide gate-source voltage range, compatible with a variety of drive circuits. |
| **Turning Voltage (Vth)** | 3.5V | Ensures that the MOSFET is turned on at a lower gate-source voltage, providing reliable switching control. |
| **On-resistance (RDS(ON))** | 700mΩ @ VGS=10V | Provides lower on-resistance at higher gate voltages, reducing power loss during switching. |
| **Maximum drain current (ID)** | 7A | Suitable for medium power loads, capable of effectively handling 7A current requirements. |
| **Technology** | SJ_Multi-EPI | Super junction multi-layer EPI technology provides excellent voltage resistance and low on-resistance, improving switching efficiency and reliability. |
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Domain and module applications：
Application fields and module examples
1. **Power management system**
- STD9N60M2-VB performs well in high-efficiency power conversion systems (such as DC-DC converters, AC-DC adapters, etc.). Due to its high withstand voltage and low on-resistance, it can provide efficient power conversion and stable current output in the power system, and is widely used in data centers, telecommunications equipment and other fields.
2. **Industrial control system**
- This MOSFET is suitable for various industrial control applications, including motor drives, temperature control equipment and industrial automation systems. In these applications, the high withstand voltage and low on-resistance provided by STD9N60M2-VB can ensure the high efficiency and stability of the system, especially suitable for use in high-load and high-frequency control occasions.
3. **Inverter and uninterruptible power supply (UPS)**
- In inverter and UPS systems, STD9N60M2-VB can provide efficient power switches, especially suitable for solar inverters, wind power systems, etc. Its high withstand voltage capability enables it to withstand voltage fluctuations in the system, while its low on-resistance reduces overall power loss and improves the overall efficiency of the system.
4. **Battery Management System (BMS)**
- In the battery management system of electric vehicles and energy storage systems, the STD9N60M2-VB is used for efficient battery charge and discharge management. Because it can withstand higher voltages and provide low power consumption, it can effectively improve system stability and extend battery life in battery protection, load control and other links.
5. **LED Driver**
- This MOSFET is widely used in LED driver power supplies, especially in situations where high power and high efficiency are required. The high voltage and low on-resistance performance provided by the STD9N60M2-VB ensures the stability and high efficiency of the LED system, suitable for commercial, industrial and street lighting.
6. **Consumer Electronics Devices**
- In the field of consumer electronics, STD9N60M2-VB can be used in devices such as mobile phone chargers and tablet adapters to provide efficient current conversion and stable power supply. Its low on-resistance and high withstand voltage characteristics ensure that these devices can operate at higher efficiency and reduce power loss.
Through its excellent conductivity and efficient switching capabilities, STD9N60M2-VB has become an ideal choice for high-power, high-efficiency applications, and can meet the power management needs in a wide range of application scenarios.
1. **Power management system**
- STD9N60M2-VB performs well in high-efficiency power conversion systems (such as DC-DC converters, AC-DC adapters, etc.). Due to its high withstand voltage and low on-resistance, it can provide efficient power conversion and stable current output in the power system, and is widely used in data centers, telecommunications equipment and other fields.
2. **Industrial control system**
- This MOSFET is suitable for various industrial control applications, including motor drives, temperature control equipment and industrial automation systems. In these applications, the high withstand voltage and low on-resistance provided by STD9N60M2-VB can ensure the high efficiency and stability of the system, especially suitable for use in high-load and high-frequency control occasions.
3. **Inverter and uninterruptible power supply (UPS)**
- In inverter and UPS systems, STD9N60M2-VB can provide efficient power switches, especially suitable for solar inverters, wind power systems, etc. Its high withstand voltage capability enables it to withstand voltage fluctuations in the system, while its low on-resistance reduces overall power loss and improves the overall efficiency of the system.
4. **Battery Management System (BMS)**
- In the battery management system of electric vehicles and energy storage systems, the STD9N60M2-VB is used for efficient battery charge and discharge management. Because it can withstand higher voltages and provide low power consumption, it can effectively improve system stability and extend battery life in battery protection, load control and other links.
5. **LED Driver**
- This MOSFET is widely used in LED driver power supplies, especially in situations where high power and high efficiency are required. The high voltage and low on-resistance performance provided by the STD9N60M2-VB ensures the stability and high efficiency of the LED system, suitable for commercial, industrial and street lighting.
6. **Consumer Electronics Devices**
- In the field of consumer electronics, STD9N60M2-VB can be used in devices such as mobile phone chargers and tablet adapters to provide efficient current conversion and stable power supply. Its low on-resistance and high withstand voltage characteristics ensure that these devices can operate at higher efficiency and reduce power loss.
Through its excellent conductivity and efficient switching capabilities, STD9N60M2-VB has become an ideal choice for high-power, high-efficiency applications, and can meet the power management needs in a wide range of application scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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