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STD9N10T4-VB Product details
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Product Introduction
**STD9N10T4-VB** is a single N-channel power MOSFET in TO252 package and uses Trench technology. This model has a drain-source voltage (VDS) of 100V and a maximum drain current (ID) of 15A, suitable for low to medium power switching power supplies and drive circuits. Its maximum on-resistance (RDS(ON)) is 114mΩ@VGS=10V, which can provide higher conduction efficiency, especially suitable for application scenarios requiring lower losses. This MOSFET is designed for high-efficiency power management, switching power supplies, LED drivers and other fields.
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**STD9N10T4-VB** is a single N-channel power MOSFET in TO252 package and uses Trench technology. This model has a drain-source voltage (VDS) of 100V and a maximum drain current (ID) of 15A, suitable for low to medium power switching power supplies and drive circuits. Its maximum on-resistance (RDS(ON)) is 114mΩ@VGS=10V, which can provide higher conduction efficiency, especially suitable for application scenarios requiring lower losses. This MOSFET is designed for high-efficiency power management, switching power supplies, LED drivers and other fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
The following are the detailed technical parameters of **STD9N10T4-VB**:
| Parameter | Value | Unit | Description|
|------------------|-------------------------------|--------------|--------------------------------------|
| **Package Type** | TO252 | — | Compact package suitable for surface mounting and supporting medium power applications. |
| **Channel Type** | Single N-channel| — | Provides efficient switching characteristics and good conduction performance. |
| **Drain-Source Voltage (VDS)** | 100 | V | Maximum drain-source voltage, suitable for medium voltage control and drive systems. |
| **Gate-Source Voltage (VGS)** | ±20 | V | Supports gate voltage of ±20V, suitable for various gate control applications. |
| **Threshold Voltage (Vth)** | 1.8 | V | Gate-source voltage required to initiate conduction, ensuring fast turn-on. |
| **On-resistance (RDS(ON))** | 114 | mΩ | Maximum on-resistance at VGS=10V, suitable for high-efficiency switching applications. |
| **Drain Current (ID)** | 15 | A | Maximum continuous drain current, suitable for small to medium power loads. |
| **Technology** | Trench | — | Uses Trench technology to provide low on-resistance and good switching characteristics. |
| **Operating Temperature Range** | -55 ~ 150 | ℃ | Withstands operating temperature range to accommodate harsh environmental conditions. |
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The following are the detailed technical parameters of **STD9N10T4-VB**:
| Parameter | Value | Unit | Description|
|------------------|-------------------------------|--------------|--------------------------------------|
| **Package Type** | TO252 | — | Compact package suitable for surface mounting and supporting medium power applications. |
| **Channel Type** | Single N-channel| — | Provides efficient switching characteristics and good conduction performance. |
| **Drain-Source Voltage (VDS)** | 100 | V | Maximum drain-source voltage, suitable for medium voltage control and drive systems. |
| **Gate-Source Voltage (VGS)** | ±20 | V | Supports gate voltage of ±20V, suitable for various gate control applications. |
| **Threshold Voltage (Vth)** | 1.8 | V | Gate-source voltage required to initiate conduction, ensuring fast turn-on. |
| **On-resistance (RDS(ON))** | 114 | mΩ | Maximum on-resistance at VGS=10V, suitable for high-efficiency switching applications. |
| **Drain Current (ID)** | 15 | A | Maximum continuous drain current, suitable for small to medium power loads. |
| **Technology** | Trench | — | Uses Trench technology to provide low on-resistance and good switching characteristics. |
| **Operating Temperature Range** | -55 ~ 150 | ℃ | Withstands operating temperature range to accommodate harsh environmental conditions. |
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Domain and module applications：
Application fields and module examples
**STD9N10T4-VB** As a medium voltage and current MOSFET, it has a wide range of application potential, especially suitable for medium power, high efficiency power management and drive circuits. Here are several typical application areas:
1. **DC-DC converter**
In DC-DC converters, the low on-resistance and high current carrying capacity of STD9N10T4-VB make it an ideal choice for improving power efficiency. It is particularly suitable for medium and low power electronic devices such as portable devices, communication modules and small home appliance power supplies.
2. **Battery Management System (BMS)**
Due to its low on-resistance and high current carrying capacity, this MOSFET is widely used in battery management systems, especially in battery protection and charging circuits, to ensure the high efficiency and safety of the system.
3. **LED driver**
In LED driver, STD9N10T4-VB's low power loss and high switching efficiency enable it to provide continuous and stable current for LED lighting systems, suitable for a variety of high-efficiency lighting applications.
4. **Power tool power management**
The high current carrying capacity and low on-resistance of this MOSFET make it suitable for the drive circuit of power tools, maintaining low power loss under high load conditions, thereby improving the overall performance and service life of power tools.
5. **Motor control system**
In motor control, STD9N10T4-VB can be used as a switching element to control the start, speed regulation and stop of the motor. Its low on-resistance and high current capability make it an indispensable component in the motor drive system.
In summary, **STD9N10T4-VB** is suitable for medium voltage, low power loss switching power supplies, LED driver power supplies, power tool power supplies and motor control systems. It is a MOSFET that performs well in a variety of power management and drive applications.
**STD9N10T4-VB** As a medium voltage and current MOSFET, it has a wide range of application potential, especially suitable for medium power, high efficiency power management and drive circuits. Here are several typical application areas:
1. **DC-DC converter**
In DC-DC converters, the low on-resistance and high current carrying capacity of STD9N10T4-VB make it an ideal choice for improving power efficiency. It is particularly suitable for medium and low power electronic devices such as portable devices, communication modules and small home appliance power supplies.
2. **Battery Management System (BMS)**
Due to its low on-resistance and high current carrying capacity, this MOSFET is widely used in battery management systems, especially in battery protection and charging circuits, to ensure the high efficiency and safety of the system.
3. **LED driver**
In LED driver, STD9N10T4-VB's low power loss and high switching efficiency enable it to provide continuous and stable current for LED lighting systems, suitable for a variety of high-efficiency lighting applications.
4. **Power tool power management**
The high current carrying capacity and low on-resistance of this MOSFET make it suitable for the drive circuit of power tools, maintaining low power loss under high load conditions, thereby improving the overall performance and service life of power tools.
5. **Motor control system**
In motor control, STD9N10T4-VB can be used as a switching element to control the start, speed regulation and stop of the motor. Its low on-resistance and high current capability make it an indispensable component in the motor drive system.
In summary, **STD9N10T4-VB** is suitable for medium voltage, low power loss switching power supplies, LED driver power supplies, power tool power supplies and motor control systems. It is a MOSFET that performs well in a variety of power management and drive applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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