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STD95NH02L-1-VB Product details
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Product Introduction
**STD95NH02L-1-VB** is a **single N-channel MOSFET** in **TO-251 package**, based on **Trench technology**. With **30V drain-source voltage (VDS)** and **100A maximum drain current (ID)**, this MOSFET is suitable for high-efficiency low-voltage applications. Its **ultra-low on-resistance** (RDS(ON) = 4.5mΩ @ VGS=4.5V and 3.5mΩ @ VGS=10V) and **1.7V threshold voltage (Vth)** ensure its efficient conduction characteristics under high current conditions. Due to its excellent current carrying capacity and low loss characteristics, the STD95NH02L-1-VB performs particularly well in applications requiring fast switching and efficient current control.
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**STD95NH02L-1-VB** is a **single N-channel MOSFET** in **TO-251 package**, based on **Trench technology**. With **30V drain-source voltage (VDS)** and **100A maximum drain current (ID)**, this MOSFET is suitable for high-efficiency low-voltage applications. Its **ultra-low on-resistance** (RDS(ON) = 4.5mΩ @ VGS=4.5V and 3.5mΩ @ VGS=10V) and **1.7V threshold voltage (Vth)** ensure its efficient conduction characteristics under high current conditions. Due to its excellent current carrying capacity and low loss characteristics, the STD95NH02L-1-VB performs particularly well in applications requiring fast switching and efficient current control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 100A | 3.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
| **Parameter category** | **Parameter value** | **Description** |
|----------------------|--------------------------------|--------------------------------------------------------------------------|
| **Package type** | TO-251 | Surface mount package, suitable for efficient heat dissipation and compact design|
| **Channel configuration** | Single N-channel | Provides efficient current conduction and switching capabilities|
| **Maximum drain-source voltage (VDS)** | 30V | Suitable for low-voltage power supply and current control applications|
| **Maximum gate drive voltage (VGS)** | ±20V | Supports a wide gate drive voltage range for flexible control design|
| **Threshold voltage (Vth)** | 1.7V | Lower threshold voltage ensures that MOSFET can be effectively turned on at low voltage|
| **On-resistance (RDS(ON))** | 4.5mΩ @ VGS=4.5V, 3.5mΩ @ VGS=10V | Ultra-low on-resistance, significantly reducing conduction loss and improving energy efficiency|
| **Maximum drain current (ID)** | 100A | Extremely high current carrying capacity, suitable for high current applications|
| **Technology type** | Trench | Optimized trench technology can effectively reduce on-resistance and improve switching efficiency|
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| **Parameter category** | **Parameter value** | **Description** |
|----------------------|--------------------------------|--------------------------------------------------------------------------|
| **Package type** | TO-251 | Surface mount package, suitable for efficient heat dissipation and compact design|
| **Channel configuration** | Single N-channel | Provides efficient current conduction and switching capabilities|
| **Maximum drain-source voltage (VDS)** | 30V | Suitable for low-voltage power supply and current control applications|
| **Maximum gate drive voltage (VGS)** | ±20V | Supports a wide gate drive voltage range for flexible control design|
| **Threshold voltage (Vth)** | 1.7V | Lower threshold voltage ensures that MOSFET can be effectively turned on at low voltage|
| **On-resistance (RDS(ON))** | 4.5mΩ @ VGS=4.5V, 3.5mΩ @ VGS=10V | Ultra-low on-resistance, significantly reducing conduction loss and improving energy efficiency|
| **Maximum drain current (ID)** | 100A | Extremely high current carrying capacity, suitable for high current applications|
| **Technology type** | Trench | Optimized trench technology can effectively reduce on-resistance and improve switching efficiency|
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Domain and module applications：
Application fields and module examples
1. **High-power DC-DC converter**
- **Application scenario**: Switching module for high-efficiency DC-DC converter.
- **Description**: The low on-resistance (RDS(ON)) and high current carrying capacity (100A) of STD95NH02L-1-VB make it highly efficient in power conversion, especially for high-efficiency voltage conversion applications that require frequent switching.
2. **Motor drive system**
- **Application scenario**: Used in power tools, fans, electric vehicle drive modules, etc.
- **Description**: This MOSFET has a very high current carrying capacity, can drive high-power motors and maintain low losses, and is suitable for high-current and high-efficiency motor drive scenarios.
3. **Battery Management System (BMS)**
- **Application scenario**: Used for battery charge and discharge control in battery management systems.
- **Description**: Its 30V withstand voltage range makes it suitable for management systems with lower battery voltages, while its ultra-low RDS(ON) helps reduce power loss during battery charging and discharging, improving system efficiency.
4. **Consumer Electronics**
- **Application Scenario**: Power management modules for portable electronic devices such as smartphones, laptops, etc.
- **Description**: The application of STD95NH02L-1-VB in consumer electronics ensures efficient power conversion and control, especially in areas with high requirements for volume and efficiency.
5. **Power Amplifier and RF Applications**
- **Application Scenario**: As a switching device in RF power amplifiers.
- **Description**: With its high current capability and fast switching performance, the STD95NH02L-1-VB is suitable for power regulation and switch control in RF applications, helping to improve the efficiency and performance of RF systems.
Through its excellent current carrying capability, low on-resistance and fast response characteristics, the STD95NH02L-1-VB is ideal for efficient power management and high power applications.
1. **High-power DC-DC converter**
- **Application scenario**: Switching module for high-efficiency DC-DC converter.
- **Description**: The low on-resistance (RDS(ON)) and high current carrying capacity (100A) of STD95NH02L-1-VB make it highly efficient in power conversion, especially for high-efficiency voltage conversion applications that require frequent switching.
2. **Motor drive system**
- **Application scenario**: Used in power tools, fans, electric vehicle drive modules, etc.
- **Description**: This MOSFET has a very high current carrying capacity, can drive high-power motors and maintain low losses, and is suitable for high-current and high-efficiency motor drive scenarios.
3. **Battery Management System (BMS)**
- **Application scenario**: Used for battery charge and discharge control in battery management systems.
- **Description**: Its 30V withstand voltage range makes it suitable for management systems with lower battery voltages, while its ultra-low RDS(ON) helps reduce power loss during battery charging and discharging, improving system efficiency.
4. **Consumer Electronics**
- **Application Scenario**: Power management modules for portable electronic devices such as smartphones, laptops, etc.
- **Description**: The application of STD95NH02L-1-VB in consumer electronics ensures efficient power conversion and control, especially in areas with high requirements for volume and efficiency.
5. **Power Amplifier and RF Applications**
- **Application Scenario**: As a switching device in RF power amplifiers.
- **Description**: With its high current capability and fast switching performance, the STD95NH02L-1-VB is suitable for power regulation and switch control in RF applications, helping to improve the efficiency and performance of RF systems.
Through its excellent current carrying capability, low on-resistance and fast response characteristics, the STD95NH02L-1-VB is ideal for efficient power management and high power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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