中文
English
STD8NM60ND-VB Product details
Back to previous pageProduct introduction：
STD8NM60ND-VB Product Introduction
STD8NM60ND-VB is an N-channel power MOSFET based on SJ_Multi-EPI technology, using TO252 package, with 650V drain-source breakdown voltage (VDS), 30V gate-source voltage limit (VGS), and 7A maximum drain current (ID). Its on-resistance (RDS(ON)) is 700mΩ (at VGS=10V), and the threshold voltage (Vth) is 3.5V, which is suitable for use in high-voltage, high-efficiency power management applications. The device has excellent switching characteristics, low conduction loss and high voltage resistance, and is widely used in circuits that require high voltage tolerance and low on-resistance.
---
STD8NM60ND-VB is an N-channel power MOSFET based on SJ_Multi-EPI technology, using TO252 package, with 650V drain-source breakdown voltage (VDS), 30V gate-source voltage limit (VGS), and 7A maximum drain current (ID). Its on-resistance (RDS(ON)) is 700mΩ (at VGS=10V), and the threshold voltage (Vth) is 3.5V, which is suitable for use in high-voltage, high-efficiency power management applications. The device has excellent switching characteristics, low conduction loss and high voltage resistance, and is widely used in circuits that require high voltage tolerance and low on-resistance.
---
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
STD8NM60ND-VB Detailed Parameter Description
| **Parameter** | **Value** | **Description** |
|-------------------------|---------------------------|---------------------------------------------------|
| **Package Type** | TO252 | The TO252 package is suitable for power-intensive applications and has good thermal management performance. |
| **Channel Type** | Single N-channel | A common high-efficiency power switch configuration suitable for high-voltage power conversion. |
| **Drain-Source Voltage (VDS)** | 650V | High voltage tolerance, suitable for high-voltage power supplies and industrial circuits. |
| **Gate-Source Voltage (VGS)** | ±30V | Suitable for high-voltage drive systems to ensure stable gate control. |
| **Threshold Voltage (Vth)** | 3.5V | The startup voltage is 3.5V, suitable for a variety of low-voltage control systems. |
| **On-resistance (RDS(ON))** | 700mΩ @ VGS=10V | High on-resistance in the on state, suitable for lower current applications. |
| **Drain current (ID)** | 7A | Supports medium current applications, suitable for a variety of loads. |
| **Technology type** | SJ_Multi-EPI | Uses advanced multi-junction EPI technology to optimize switching characteristics and power efficiency. |
---
| **Parameter** | **Value** | **Description** |
|-------------------------|---------------------------|---------------------------------------------------|
| **Package Type** | TO252 | The TO252 package is suitable for power-intensive applications and has good thermal management performance. |
| **Channel Type** | Single N-channel | A common high-efficiency power switch configuration suitable for high-voltage power conversion. |
| **Drain-Source Voltage (VDS)** | 650V | High voltage tolerance, suitable for high-voltage power supplies and industrial circuits. |
| **Gate-Source Voltage (VGS)** | ±30V | Suitable for high-voltage drive systems to ensure stable gate control. |
| **Threshold Voltage (Vth)** | 3.5V | The startup voltage is 3.5V, suitable for a variety of low-voltage control systems. |
| **On-resistance (RDS(ON))** | 700mΩ @ VGS=10V | High on-resistance in the on state, suitable for lower current applications. |
| **Drain current (ID)** | 7A | Supports medium current applications, suitable for a variety of loads. |
| **Technology type** | SJ_Multi-EPI | Uses advanced multi-junction EPI technology to optimize switching characteristics and power efficiency. |
---
Domain and module applications：
Application fields and module examples
1. **High-voltage power converter**
STD8NM60ND-VB is very suitable for high-voltage power converters, such as industrial power supply equipment, AC/DC power modules, and switching power supplies, due to its 650V withstand voltage capability. Its higher drain current and lower on-resistance help improve conversion efficiency and reduce energy loss, and is suitable for power conversion needs below 650V.
2. **Motor drive system**
In the field of motor drive, STD8NM60ND-VB can play a key role in high-voltage motor control systems. Whether it is a motor drive in household appliances or a higher-power industrial motor drive, the use of this MOSFET can optimize current control and switching losses, and improve the response speed and efficiency of the system.
3. **Inverter system**
Due to its high withstand voltage and efficient switching characteristics, this MOSFET is very suitable for inverter modules, especially for DC/AC converters used in photovoltaic systems or wind power generation systems. Its high voltage withstand capability enables it to handle higher input voltages, ensuring stable and reliable power conversion.
4. **Battery Management System (BMS)**
In a battery management system, the STD8NM60ND-VB can be used to control the battery charge and discharge process. Its high voltage withstand characteristics enable it to be used in higher voltage battery packs, optimize battery charging efficiency and management, and ensure safe and stable system operation.
5. **Power Electronics Modules**
This MOSFET is also widely used in power electronics modules, especially in scenarios that require high power conversion and efficient switching, such as power regulation, industrial control systems, and current switches in electrical equipment. With low on-resistance and excellent switching performance, the STD8NM60ND-VB can significantly improve the efficiency and reliability of power electronics systems.
The STD8NM60ND-VB is an excellent high-voltage power MOSFET suitable for a wide range of power management, industrial control, renewable energy systems and other fields. Its high voltage withstand capability and low on-resistance make it of great application value in complex electrical environments.
1. **High-voltage power converter**
STD8NM60ND-VB is very suitable for high-voltage power converters, such as industrial power supply equipment, AC/DC power modules, and switching power supplies, due to its 650V withstand voltage capability. Its higher drain current and lower on-resistance help improve conversion efficiency and reduce energy loss, and is suitable for power conversion needs below 650V.
2. **Motor drive system**
In the field of motor drive, STD8NM60ND-VB can play a key role in high-voltage motor control systems. Whether it is a motor drive in household appliances or a higher-power industrial motor drive, the use of this MOSFET can optimize current control and switching losses, and improve the response speed and efficiency of the system.
3. **Inverter system**
Due to its high withstand voltage and efficient switching characteristics, this MOSFET is very suitable for inverter modules, especially for DC/AC converters used in photovoltaic systems or wind power generation systems. Its high voltage withstand capability enables it to handle higher input voltages, ensuring stable and reliable power conversion.
4. **Battery Management System (BMS)**
In a battery management system, the STD8NM60ND-VB can be used to control the battery charge and discharge process. Its high voltage withstand characteristics enable it to be used in higher voltage battery packs, optimize battery charging efficiency and management, and ensure safe and stable system operation.
5. **Power Electronics Modules**
This MOSFET is also widely used in power electronics modules, especially in scenarios that require high power conversion and efficient switching, such as power regulation, industrial control systems, and current switches in electrical equipment. With low on-resistance and excellent switching performance, the STD8NM60ND-VB can significantly improve the efficiency and reliability of power electronics systems.
The STD8NM60ND-VB is an excellent high-voltage power MOSFET suitable for a wide range of power management, industrial control, renewable energy systems and other fields. Its high voltage withstand capability and low on-resistance make it of great application value in complex electrical environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
