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STD8NM50N-VB Product details
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Product Introduction
**STD8NM50N-VB** is an **N-channel MOSFET** in **TO-252 package**, based on **Super Junction Multi-EPI technology**. It has **650V drain-source voltage (VDS)** and **7A maximum drain current (ID)**, which is particularly suitable for medium and high voltage applications. Its **low on-resistance** (RDS(ON) = 700mΩ @ VGS=10V) and **3.5V threshold voltage (Vth)** ensure its high efficiency in switching circuits. With its excellent voltage resistance and low conduction loss, STD8NM50N-VB is widely used in high-efficiency power supplies, motor drives and other medium and high voltage control fields.
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**STD8NM50N-VB** is an **N-channel MOSFET** in **TO-252 package**, based on **Super Junction Multi-EPI technology**. It has **650V drain-source voltage (VDS)** and **7A maximum drain current (ID)**, which is particularly suitable for medium and high voltage applications. Its **low on-resistance** (RDS(ON) = 700mΩ @ VGS=10V) and **3.5V threshold voltage (Vth)** ensure its high efficiency in switching circuits. With its excellent voltage resistance and low conduction loss, STD8NM50N-VB is widely used in high-efficiency power supplies, motor drives and other medium and high voltage control fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
| **Parameter category** | **Parameter value** | **Description** |
|----------------------|--------------------------------|--------------------------------------------------------------------------|
| **Package type** | TO-252 | Surface mount package, suitable for high-density circuit design, with good heat dissipation performance|
| **Channel configuration** | Single N-channel | Provides efficient current conduction and switching capabilities|
| **Maximum drain-source voltage (VDS)** | 650V | Supports medium and high voltage applications, suitable for environments that require higher voltage tolerance|
| **Maximum gate drive voltage (VGS)** | ±30V | Wide drive voltage range, enhanced control capability|
| **Threshold voltage (Vth)** | 3.5V | Lower threshold voltage to ensure that the gate voltage can effectively drive the MOSFET to turn on|
| **On-resistance (RDS(ON))** | 700mΩ @ VGS=10V | Low on-resistance, reduced conduction loss, improved power conversion efficiency|
| **Maximum drain current (ID)** | 7A | Suitable for medium current applications, ensuring good working performance under high load|
| **Technology type** | Super junction (SJ) multi-epitaxial (Multi-EPI) | The optimized super junction structure improves the switching efficiency and current carrying capacity of MOSFET|
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| **Parameter category** | **Parameter value** | **Description** |
|----------------------|--------------------------------|--------------------------------------------------------------------------|
| **Package type** | TO-252 | Surface mount package, suitable for high-density circuit design, with good heat dissipation performance|
| **Channel configuration** | Single N-channel | Provides efficient current conduction and switching capabilities|
| **Maximum drain-source voltage (VDS)** | 650V | Supports medium and high voltage applications, suitable for environments that require higher voltage tolerance|
| **Maximum gate drive voltage (VGS)** | ±30V | Wide drive voltage range, enhanced control capability|
| **Threshold voltage (Vth)** | 3.5V | Lower threshold voltage to ensure that the gate voltage can effectively drive the MOSFET to turn on|
| **On-resistance (RDS(ON))** | 700mΩ @ VGS=10V | Low on-resistance, reduced conduction loss, improved power conversion efficiency|
| **Maximum drain current (ID)** | 7A | Suitable for medium current applications, ensuring good working performance under high load|
| **Technology type** | Super junction (SJ) multi-epitaxial (Multi-EPI) | The optimized super junction structure improves the switching efficiency and current carrying capacity of MOSFET|
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Domain and module applications：
Application fields and module examples
1. **Power management**
- **Application scenario**: Main switch device for switch mode power supply (SMPS).
- **Description**: The high withstand voltage (650V) and low RDS(ON) characteristics of STD8NM50N-VB make it very suitable for high-frequency and high-efficiency power conversion systems, which can effectively reduce losses and improve efficiency.
2. **Motor drive**
- **Application scenario**: For medium-power motor drive modules such as fan drive, power tools, etc.
- **Description**: The high current carrying capacity (7A) of this device enables it to provide stable performance in motor control systems, especially suitable for medium and high-power motor drive applications.
3. **LED drive circuit**
- **Application scenario**: High-efficiency switching circuit for LED lighting power supply.
- **Description**: STD8NM50N-VB can effectively control current under high voltage, ensuring stable operation of LED driver power under various load conditions, reducing heat and improving system efficiency.
4. **Solar Photovoltaic Inverter**
- **Application Scenario**: Used in inverter switch circuits in solar photovoltaic systems.
- **Description**: The high withstand voltage characteristics and low on-resistance of this MOSFET make it very suitable for use in solar inverters, which can efficiently convert DC power into AC power and improve energy conversion efficiency.
5. **Home Appliances**
- **Application Scenario**: Used in home appliance frequency conversion control modules, such as inverter modules for air conditioners, refrigerators and other equipment.
- **Description**: In energy-efficient home appliances, STD8NM50N-VB can be used as the core switching element of the power management module to provide stable current control and efficient power conversion.
1. **Power management**
- **Application scenario**: Main switch device for switch mode power supply (SMPS).
- **Description**: The high withstand voltage (650V) and low RDS(ON) characteristics of STD8NM50N-VB make it very suitable for high-frequency and high-efficiency power conversion systems, which can effectively reduce losses and improve efficiency.
2. **Motor drive**
- **Application scenario**: For medium-power motor drive modules such as fan drive, power tools, etc.
- **Description**: The high current carrying capacity (7A) of this device enables it to provide stable performance in motor control systems, especially suitable for medium and high-power motor drive applications.
3. **LED drive circuit**
- **Application scenario**: High-efficiency switching circuit for LED lighting power supply.
- **Description**: STD8NM50N-VB can effectively control current under high voltage, ensuring stable operation of LED driver power under various load conditions, reducing heat and improving system efficiency.
4. **Solar Photovoltaic Inverter**
- **Application Scenario**: Used in inverter switch circuits in solar photovoltaic systems.
- **Description**: The high withstand voltage characteristics and low on-resistance of this MOSFET make it very suitable for use in solar inverters, which can efficiently convert DC power into AC power and improve energy conversion efficiency.
5. **Home Appliances**
- **Application Scenario**: Used in home appliance frequency conversion control modules, such as inverter modules for air conditioners, refrigerators and other equipment.
- **Description**: In energy-efficient home appliances, STD8NM50N-VB can be used as the core switching element of the power management module to provide stable current control and efficient power conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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