中文
English
STD8N80K5-VB Product details
Back to previous pageProduct introduction：
STD8N80K5-VB Product Introduction
STD8N80K5-VB is a single N-channel MOSFET packaged in TO252, designed for high-voltage, high-performance switching applications. The device uses advanced super junction (SJ) and multi-layer epitaxial (Multi-EPI) technology, with excellent electrical performance and low on-resistance, suitable for power electronics that require high efficiency, low power consumption and high voltage resistance. Its 800V drain-source voltage (VDS) and 7A maximum drain current (ID) make it particularly suitable for high-voltage applications such as power management, industrial electrical control and automotive electronics.
STD8N80K5-VB is a single N-channel MOSFET packaged in TO252, designed for high-voltage, high-performance switching applications. The device uses advanced super junction (SJ) and multi-layer epitaxial (Multi-EPI) technology, with excellent electrical performance and low on-resistance, suitable for power electronics that require high efficiency, low power consumption and high voltage resistance. Its 800V drain-source voltage (VDS) and 7A maximum drain current (ID) make it particularly suitable for high-voltage applications such as power management, industrial electrical control and automotive electronics.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 7A | 770mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
STD8N80K5-VB Detailed Parameters
| Parameters | Specifications | Description |
|--------------------|---------------------|--------------------------------------------------|
| **Package** | TO252 | Compact package for high-efficiency heat dissipation and high-current applications |
| **Channel Type** | Single N-channel | Provides efficient current control and switching speed |
| **Drain-Source Voltage (VDS)** | 800V | Suitable for high-voltage working environments, providing strong electrical isolation |
| **Gate-Source Voltage (VGS)** | ±30V | Wide gate drive voltage to ensure stable control |
| **Threshold Voltage (Vth)** | 3.5V | Minimum voltage required for gate turn-on |
| **On-resistance (RDS(ON))** | 770mΩ @ VGS=10V | Low on-resistance, reduced conduction loss, improved switching efficiency |
| **Drain Current (ID)** | 7A | Maximum continuous drain current for medium power loads |
| **Technology Type** | SJ_Multi-EPI | Multi-layer epitaxial technology reduces conduction losses and improves efficiency and reliability |
| Parameters | Specifications | Description |
|--------------------|---------------------|--------------------------------------------------|
| **Package** | TO252 | Compact package for high-efficiency heat dissipation and high-current applications |
| **Channel Type** | Single N-channel | Provides efficient current control and switching speed |
| **Drain-Source Voltage (VDS)** | 800V | Suitable for high-voltage working environments, providing strong electrical isolation |
| **Gate-Source Voltage (VGS)** | ±30V | Wide gate drive voltage to ensure stable control |
| **Threshold Voltage (Vth)** | 3.5V | Minimum voltage required for gate turn-on |
| **On-resistance (RDS(ON))** | 770mΩ @ VGS=10V | Low on-resistance, reduced conduction loss, improved switching efficiency |
| **Drain Current (ID)** | 7A | Maximum continuous drain current for medium power loads |
| **Technology Type** | SJ_Multi-EPI | Multi-layer epitaxial technology reduces conduction losses and improves efficiency and reliability |
Domain and module applications：
Typical Applications and Modules
1. **Power Management**
The STD8N80K5-VB is commonly used in high voltage power management modules such as switch mode power supplies (SMPS), DC-DC converters, etc. Its high withstand voltage capability and low on-resistance enable it to reduce energy loss in high-efficiency power conversion and improve the overall efficiency of the power supply.
2. **Power Tools and Motor Control**
In power tools and motor drive circuits, the STD8N80K5-VB can be used as a key switching device for motor drivers. Its high voltage tolerance enables it to provide better control accuracy and thermal stability when driving high-power motors.
3. **Industrial Electrical Equipment**
This MOSFET is widely used in industrial automation and control systems such as relay replacement, programmable logic controllers (PLCs), and battery management systems (BMS). Its high withstand voltage and low on-resistance characteristics enable it to maintain stable performance in environments with large voltage and current fluctuations.
4. **Automotive electronics**
In automotive electronic modules, especially in electric drive systems, charging equipment and inverters, the STD8N80K5-VB can provide efficient switching control. Its excellent thermal performance and high voltage tolerance make it widely used in electric vehicles and their charging infrastructure.
5. **Renewable energy systems**
The device is widely used in solar inverters and wind power conversion systems. By reducing conduction losses and increasing switching speeds, the STD8N80K5-VB helps improve the efficiency and reliability of the entire new energy system.
1. **Power Management**
The STD8N80K5-VB is commonly used in high voltage power management modules such as switch mode power supplies (SMPS), DC-DC converters, etc. Its high withstand voltage capability and low on-resistance enable it to reduce energy loss in high-efficiency power conversion and improve the overall efficiency of the power supply.
2. **Power Tools and Motor Control**
In power tools and motor drive circuits, the STD8N80K5-VB can be used as a key switching device for motor drivers. Its high voltage tolerance enables it to provide better control accuracy and thermal stability when driving high-power motors.
3. **Industrial Electrical Equipment**
This MOSFET is widely used in industrial automation and control systems such as relay replacement, programmable logic controllers (PLCs), and battery management systems (BMS). Its high withstand voltage and low on-resistance characteristics enable it to maintain stable performance in environments with large voltage and current fluctuations.
4. **Automotive electronics**
In automotive electronic modules, especially in electric drive systems, charging equipment and inverters, the STD8N80K5-VB can provide efficient switching control. Its excellent thermal performance and high voltage tolerance make it widely used in electric vehicles and their charging infrastructure.
5. **Renewable energy systems**
The device is widely used in solar inverters and wind power conversion systems. By reducing conduction losses and increasing switching speeds, the STD8N80K5-VB helps improve the efficiency and reliability of the entire new energy system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
