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STD8N65M5-VB Product details
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STD8N65M5-VB Product Introduction
STD8N65M5-VB is a high-efficiency N-channel power MOSFET in TO252 package, suitable for various high-voltage and high-current switching applications. It adopts super junction multi-layer EPI technology (SJ_Multi-EPI) to provide high withstand voltage while maintaining low on-resistance to reduce power loss. The MOSFET has a rated voltage of 700V, suitable for high-voltage systems, and a maximum drain current of 10A. It has a wide range of applications and can provide reliable performance in high-efficiency power management, industrial control and battery management.
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STD8N65M5-VB is a high-efficiency N-channel power MOSFET in TO252 package, suitable for various high-voltage and high-current switching applications. It adopts super junction multi-layer EPI technology (SJ_Multi-EPI) to provide high withstand voltage while maintaining low on-resistance to reduce power loss. The MOSFET has a rated voltage of 700V, suitable for high-voltage systems, and a maximum drain current of 10A. It has a wide range of applications and can provide reliable performance in high-efficiency power management, industrial control and battery management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 10A | 600mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 10A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 10A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed product parameter description
| **Parameter** | **Value** | **Description** |
|----------------------|---------------------------------|-------------------------------------------------------------|
| **Package type** | TO252 | Compact surface mount package, suitable for space-constrained applications with high efficiency requirements. |
| **Configuration** | Single N-channel | Uses a single N-channel structure, suitable for standard power transmission applications. |
| **Drain-source voltage (VDS)** | 700V | Adapts to high-voltage working environment and ensures system safety and stability. |
| **Gate-source voltage (VGS)** | ±30V | Supports a wider gate voltage control range, suitable for various drive circuits. |
| **Turning on voltage (Vth)** | 3.5V | Ensures that the MOSFET is reliably turned on at a lower gate-source voltage. |
| **On-resistance (RDS(ON))** | 600mΩ @ VGS=10V | Provides low conduction loss, reduces system power loss, and improves overall efficiency. |
| **Maximum drain current (ID)** | 10A | Can handle medium to high current loads, suitable for applications requiring higher current. |
| **Technology** | SJ_Multi-EPI | Super junction technology combined with multi-layer EPI process provides high breakdown voltage and low on-resistance, suitable for high-performance switching applications. |
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| **Parameter** | **Value** | **Description** |
|----------------------|---------------------------------|-------------------------------------------------------------|
| **Package type** | TO252 | Compact surface mount package, suitable for space-constrained applications with high efficiency requirements. |
| **Configuration** | Single N-channel | Uses a single N-channel structure, suitable for standard power transmission applications. |
| **Drain-source voltage (VDS)** | 700V | Adapts to high-voltage working environment and ensures system safety and stability. |
| **Gate-source voltage (VGS)** | ±30V | Supports a wider gate voltage control range, suitable for various drive circuits. |
| **Turning on voltage (Vth)** | 3.5V | Ensures that the MOSFET is reliably turned on at a lower gate-source voltage. |
| **On-resistance (RDS(ON))** | 600mΩ @ VGS=10V | Provides low conduction loss, reduces system power loss, and improves overall efficiency. |
| **Maximum drain current (ID)** | 10A | Can handle medium to high current loads, suitable for applications requiring higher current. |
| **Technology** | SJ_Multi-EPI | Super junction technology combined with multi-layer EPI process provides high breakdown voltage and low on-resistance, suitable for high-performance switching applications. |
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Domain and module applications：
Applications and module examples
1. **Power management system**
- In high-efficiency power conversion equipment (such as DC-DC converters, UPS systems, inverters, etc.), the high voltage and low on-resistance characteristics of this MOSFET ensure that the power system can operate efficiently and stably. Especially in high-power power supply designs, it can reduce losses and improve conversion efficiency.
2. **Industrial control system**
- In motor drives, temperature control equipment, and other industrial control systems, the STD8N65M5-VB provides reliable switching performance. Due to its high voltage withstand capability and medium current handling capability, it is suitable for efficient control circuits that drive large loads.
3. **Battery management system (BMS)**
- This MOSFET can be effectively used for battery charge and discharge management, especially in electric vehicles or energy storage systems, for battery protection and efficient charging control. The high voltage and low on-resistance characteristics make it very suitable for use in these environments that require efficiency and stability.
4. **LED lighting power supply**
- This MOSFET can be applied to LED driver power modules to provide stable current regulation and high-efficiency power conversion, ensuring that no excessive heat is generated during long-term operation and improving the energy efficiency of lamps.
5. **Consumer electronic devices**
- In various chargers and adapters, the STD8N65M5-VB can effectively handle voltage and current changes, ensuring that charging equipment has high working efficiency while extending the service life of electronic equipment.
6. **High-voltage DC motor drive**
- Used in high-voltage motor drive circuits to provide low power consumption and high-efficiency solutions. It can handle high voltages and has a low on-resistance, allowing the motor to operate with lower energy consumption, suitable for drive control of industrial equipment such as fans, elevators, and pumps.
1. **Power management system**
- In high-efficiency power conversion equipment (such as DC-DC converters, UPS systems, inverters, etc.), the high voltage and low on-resistance characteristics of this MOSFET ensure that the power system can operate efficiently and stably. Especially in high-power power supply designs, it can reduce losses and improve conversion efficiency.
2. **Industrial control system**
- In motor drives, temperature control equipment, and other industrial control systems, the STD8N65M5-VB provides reliable switching performance. Due to its high voltage withstand capability and medium current handling capability, it is suitable for efficient control circuits that drive large loads.
3. **Battery management system (BMS)**
- This MOSFET can be effectively used for battery charge and discharge management, especially in electric vehicles or energy storage systems, for battery protection and efficient charging control. The high voltage and low on-resistance characteristics make it very suitable for use in these environments that require efficiency and stability.
4. **LED lighting power supply**
- This MOSFET can be applied to LED driver power modules to provide stable current regulation and high-efficiency power conversion, ensuring that no excessive heat is generated during long-term operation and improving the energy efficiency of lamps.
5. **Consumer electronic devices**
- In various chargers and adapters, the STD8N65M5-VB can effectively handle voltage and current changes, ensuring that charging equipment has high working efficiency while extending the service life of electronic equipment.
6. **High-voltage DC motor drive**
- Used in high-voltage motor drive circuits to provide low power consumption and high-efficiency solutions. It can handle high voltages and has a low on-resistance, allowing the motor to operate with lower energy consumption, suitable for drive control of industrial equipment such as fans, elevators, and pumps.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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