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STD8N10L-VB Product details

Product introduction:

1. STD8N10L-VB Product Introduction

STD8N10L-VB is a high-performance N-channel MOSFET in TO252 package, designed for medium and low power applications. It has a drain-source voltage (VDS) of 100V and can withstand a gate-source voltage (VGS) of ±20V. The on-resistance (RDS(ON)) of the device is 114mΩ at VGS=10V, and has a maximum drain current capability of 15A. This MOSFET uses Trench technology, has lower conduction losses and higher switching frequencies, and is very suitable for use in high-efficiency power conversion, battery management, and power regulation.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 100V 1.8V 15A 114mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 100V 1.8V 15A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 100V 1.8V 15A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
2. Detailed explanation of STD8N10L-VB parameters

| **Parameter** | **Description** |
|-----------------------|--------------------------------------------------------------|
| **Package type** | TO252 |
| **Polarity** | Single N-Channel |
| **Drain-source voltage (VDS)** | 100V |
| **Gate-source voltage (VGS)** | ±20V |
| **Throughput voltage (Vth)** | 1.8V |
| **On-resistance (RDS(ON))** | 114mΩ @ VGS=10V |
| **Drain current (ID)** | 15A |
| **Technology** | Trench |
| **Power consumption (Ptot)** | 50W (Typical value, depending on heat dissipation conditions) |
| **Operating temperature range** | -55°C to +150°C |
| **Package size** | TO252 package, compact and suitable for high density layout |

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Domain and module applications:

3. Application fields and module examples

1. **Power conversion module**
STD8N10L-VB can be widely used in AC-DC and DC-DC converters, especially in medium-power power modules that require high efficiency and low conduction loss. Its low RDS(ON) and high current carrying capacity make it suitable for high-frequency switching power supplies, optimizing energy efficiency and improving overall system reliability.

2. **Battery Management System (BMS)**
In the battery management system, STD8N10L-VB can be used for battery charging and discharging control, especially in 12V or 24V battery pack applications. Its low on-resistance helps reduce energy loss in the battery management process and ensures efficient power transmission.

3. **Motor drive and control**
This MOSFET can be used to drive and control small and medium-sized DC motors, such as fans in home appliances, power tools or automation equipment. Its low on-resistance and high current capability enable it to efficiently drive motors, reduce power losses and extend system life.

4. **Lighting driver module**
In LED lighting driver circuits, the STD8N10L-VB can be used to provide a constant current source, especially for low-power lighting systems. Its stable performance and low power consumption make it an ideal choice for controlling current and maintaining stable light output.

5. **Electric Vehicle (EV) Charger**
In electric vehicle chargers, the STD8N10L-VB can be used in power conversion and management modules, especially for 12V or 24V battery charging systems. Its efficient power conversion performance can improve charging speed and overall system energy efficiency.

6. **Smart power adapter**
In smart power adapters, the STD8N10L-VB can be used as a switching element to ensure efficient energy conversion and voltage regulation. Its high-frequency switching capability and low conduction loss make it widely used in power adapters for various consumer electronics and communication devices.

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STD8N10L-VB MOSFET is particularly suitable for medium and low power power supplies, drives and control modules that require high efficiency and high stability due to its superior performance. It provides a reliable power management solution in various applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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