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STD86N3LH5-VB Product details
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Product Introduction
**STD86N3LH5-VB** is a high-efficiency single N-channel power MOSFET in TO252 package. This product adopts Trench technology, with its low on-resistance (RDS(ON)) and high drain current (ID) characteristics, it is widely used in power management and drive circuits that require high current and low power loss. It has a drain-source voltage (VDS) of 30V and a maximum drain current (ID) of 100A, suitable for high-efficiency power conversion and high-speed switching applications.
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**STD86N3LH5-VB** is a high-efficiency single N-channel power MOSFET in TO252 package. This product adopts Trench technology, with its low on-resistance (RDS(ON)) and high drain current (ID) characteristics, it is widely used in power management and drive circuits that require high current and low power loss. It has a drain-source voltage (VDS) of 30V and a maximum drain current (ID) of 100A, suitable for high-efficiency power conversion and high-speed switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
The following are the key parameters and performance indicators of **STD86N3LH5-VB**:
| Parameter | Value | Unit | Description|
|------------------|-------------------------------|--------------|--------------------------------------|
| **Package Type** | TO252 | — | Compact package suitable for surface mounting and suitable for high-power applications. |
| **Channel Type** | Single N-channel| — | Provides efficient turn-on and turn-off performance. |
| **Drain-Source Voltage (VDS)** | 30 | V | Maximum drain-source voltage, suitable for low-voltage applications. |
| **Gate-Source Voltage (VGS)** | ±20 | V | Gate voltage tolerance range, providing good control characteristics. |
| **Threshold Voltage (Vth)** | 1.7 | V | Gate-source voltage required to start conduction, low threshold voltage ensures fast turn-on. |
| **On-resistance (RDS(ON))** | 3 | mΩ | Maximum on-resistance at VGS=4.5V, low on-resistance ensures low loss. |
| **On-resistance (RDS(ON))** | 2 | mΩ | Maximum on-resistance at VGS=10V, ensuring excellent switching efficiency. |
| **Drain current (ID)** | 100 | A | Maximum continuous drain current, suitable for high current loads. |
| **Technology** | Trench | — | Using Trench technology, providing lower on-resistance and higher switching frequency. |
| **Operating temperature range** | -55 ~ 150 | ℃ | Withstands operating temperature range to adapt to harsh environmental conditions. |
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The following are the key parameters and performance indicators of **STD86N3LH5-VB**:
| Parameter | Value | Unit | Description|
|------------------|-------------------------------|--------------|--------------------------------------|
| **Package Type** | TO252 | — | Compact package suitable for surface mounting and suitable for high-power applications. |
| **Channel Type** | Single N-channel| — | Provides efficient turn-on and turn-off performance. |
| **Drain-Source Voltage (VDS)** | 30 | V | Maximum drain-source voltage, suitable for low-voltage applications. |
| **Gate-Source Voltage (VGS)** | ±20 | V | Gate voltage tolerance range, providing good control characteristics. |
| **Threshold Voltage (Vth)** | 1.7 | V | Gate-source voltage required to start conduction, low threshold voltage ensures fast turn-on. |
| **On-resistance (RDS(ON))** | 3 | mΩ | Maximum on-resistance at VGS=4.5V, low on-resistance ensures low loss. |
| **On-resistance (RDS(ON))** | 2 | mΩ | Maximum on-resistance at VGS=10V, ensuring excellent switching efficiency. |
| **Drain current (ID)** | 100 | A | Maximum continuous drain current, suitable for high current loads. |
| **Technology** | Trench | — | Using Trench technology, providing lower on-resistance and higher switching frequency. |
| **Operating temperature range** | -55 ~ 150 | ℃ | Withstands operating temperature range to adapt to harsh environmental conditions. |
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Domain and module applications：
Application fields and module examples
**STD86N3LH5-VB** is a high-performance MOSFET suitable for multiple fields and modules. The following are typical application scenarios:
1. **DC-DC converter**
Due to its low on-resistance and high current carrying capacity, this MOSFET is widely used in high-efficiency DC-DC power converters, which can provide efficient power conversion at low voltage input, especially in consumer electronics, embedded systems and chargers.
2. **Power tool drive circuit**
In power tools, STD86N3LH5-VB can be used as a power switch in the drive circuit, carrying high current and maintaining low loss, providing excellent current control, and ensuring the smooth operation of the power tool.
3. **Battery Management System (BMS)**
Due to its low RDS(ON) and high current handling capability, this MOSFET is suitable for battery protection and balancing circuits in battery management systems, which can efficiently control the charging and discharging process and improve battery life and efficiency.
4. **DC Motor Control**
In DC motor control, this MOSFET can be used as a switch for a half-bridge driver or full-bridge circuit. It can quickly respond to high current switching and is suitable for motor drive applications such as robots and automation equipment.
5. **LED Driver Power**
In LED driver power, the high current carrying capacity and low conduction loss of STD86N3LH5-VB make it very suitable for use as an efficient switching element, supporting high-power LED lighting applications and ensuring long-term stable operation of the system.
From the above applications, it can be seen that **STD86N3LH5-VB** performs well in low-voltage, high-current, high-efficiency power conversion, drive circuits and other fields, and is an ideal choice for high-efficiency power management systems.
**STD86N3LH5-VB** is a high-performance MOSFET suitable for multiple fields and modules. The following are typical application scenarios:
1. **DC-DC converter**
Due to its low on-resistance and high current carrying capacity, this MOSFET is widely used in high-efficiency DC-DC power converters, which can provide efficient power conversion at low voltage input, especially in consumer electronics, embedded systems and chargers.
2. **Power tool drive circuit**
In power tools, STD86N3LH5-VB can be used as a power switch in the drive circuit, carrying high current and maintaining low loss, providing excellent current control, and ensuring the smooth operation of the power tool.
3. **Battery Management System (BMS)**
Due to its low RDS(ON) and high current handling capability, this MOSFET is suitable for battery protection and balancing circuits in battery management systems, which can efficiently control the charging and discharging process and improve battery life and efficiency.
4. **DC Motor Control**
In DC motor control, this MOSFET can be used as a switch for a half-bridge driver or full-bridge circuit. It can quickly respond to high current switching and is suitable for motor drive applications such as robots and automation equipment.
5. **LED Driver Power**
In LED driver power, the high current carrying capacity and low conduction loss of STD86N3LH5-VB make it very suitable for use as an efficient switching element, supporting high-power LED lighting applications and ensuring long-term stable operation of the system.
From the above applications, it can be seen that **STD86N3LH5-VB** performs well in low-voltage, high-current, high-efficiency power conversion, drive circuits and other fields, and is an ideal choice for high-efficiency power management systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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