STD7NS20-1-VB Product details
Product introduction:
STD7NS20-1-VB is an N-channel power MOSFET based on advanced Trench technology, with a drain-source breakdown voltage (VDS) of 200V, a gate-source voltage limit (VGS) of 20V, and a maximum drain current (ID) of 8A. Its on-resistance (RDS(ON)) is 270mΩ (at VGS=10V), the threshold voltage (Vth) is 3V, and the package is TO251. The device is designed for efficient power management, with excellent switching performance and low conduction loss, and is suitable for key applications in various high-voltage circuits.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 200V | 3V | 8A | 270mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 200V | 3V | 8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 200V | 3V | 8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
| **Parameter** | **Value** | **Description** |
|-------------------------|---------------------------|---------------------------------------------------|
| **Package Type** | TO251 | Single in-line package for high power applications. |
| **Channel Type** | Single N-channel | Common configuration for efficient switching. |
| **Drain-Source Voltage (VDS)** | 200V | Supports high voltage applications for industrial and consumer devices. |
| **Gate-Source Voltage (VGS)** | ±20V | Provides a large drive range for increased control flexibility. |
| **Threshold Voltage (Vth)** | 3V | Minimum gate-source voltage at startup for standard control circuits. |
| **On-resistance (RDS(ON))** | 270mΩ @ VGS=10V | Ensures low losses during conduction and improves energy efficiency. |
| **Drain current (ID)** | 8A | Supports medium current applications and is suitable for a variety of load conditions. |
| **Technology type** | Trench | Provides low losses and fast switching characteristics, optimized for high-frequency operation. |
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Domain and module applications:
1. **Switching power supply (SMPS)**
STD7NS20-1-VB can be used in efficient switching power supply circuits, especially for input voltage scenarios below 200V. For example, AC/DC converters for industrial equipment, telecommunication power modules, etc., achieve lower energy loss and higher conversion efficiency through its low on-resistance and fast switching capability.
2. **Motor drive module**
This device can play a key high-frequency switching role in motor drive. Its 200V withstand voltage makes it suitable for control modules in small industrial motors or household appliances, such as fans, pumps and other equipment.
3. **Lighting drive circuit**
In the field of LED lighting drive, STD7NS20-1-VB can stably drive high-efficiency constant current source modules, support LED drive applications below 200V, and is suitable for outdoor lighting, commercial lighting and other scenarios.
4. **Solar Inverter**
In photovoltaic systems, this MOSFET can be used as a key component for DC to AC conversion, supporting solar micro inverters with a 200V input level, improving system performance through low loss and high reliability.
5. **Battery Management System (BMS)**
STD7NS20-1-VB performs well in medium and high voltage battery management and can be used in battery charge and discharge management modules to optimize system efficiency and thermal management through its high withstand voltage and low loss characteristics.
STD7NS20-1-VB is a reliable and efficient MOSFET suitable for a variety of industrial and consumer applications, and has a wide range of applicability in situations requiring high voltage tolerance and high switching efficiency.
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