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STD7NM80T4-VB Product details
Back to previous pageProduct introduction：
1. **Product Introduction:**
The STD7NM80T4-VB is a unipolar N-type MOSFET in a TO252 package with a drain-source voltage (VDS) of 800V, suitable for scenarios requiring high voltage operation. The device has excellent on-resistance (RDS(ON) is 770mΩ @ VGS=10V), suitable for use under higher current requirements. Its gate-source voltage (VGS) is up to ±30V, ensuring tolerance to voltage fluctuations. This MOSFET uses SJ_Multi-EPI technology to improve efficiency, reliability and performance, and is suitable for power management, voltage regulation and other applications requiring high power handling.
The STD7NM80T4-VB is a unipolar N-type MOSFET in a TO252 package with a drain-source voltage (VDS) of 800V, suitable for scenarios requiring high voltage operation. The device has excellent on-resistance (RDS(ON) is 770mΩ @ VGS=10V), suitable for use under higher current requirements. Its gate-source voltage (VGS) is up to ±30V, ensuring tolerance to voltage fluctuations. This MOSFET uses SJ_Multi-EPI technology to improve efficiency, reliability and performance, and is suitable for power management, voltage regulation and other applications requiring high power handling.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 7A | 770mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. **Detailed parameter description:**
- **Package:** TO252
- **Configuration:** Single-N-Channel
- **Drain-source voltage (VDS):** 800V
- **Gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):** 770mΩ @ VGS = 10V
- **Maximum drain current (ID):** 7A
- **Technology:** SJ_Multi-EPI (Super Junction Multi-EPI)
- **Package:** TO252
- **Configuration:** Single-N-Channel
- **Drain-source voltage (VDS):** 800V
- **Gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):** 770mΩ @ VGS = 10V
- **Maximum drain current (ID):** 7A
- **Technology:** SJ_Multi-EPI (Super Junction Multi-EPI)
Domain and module applications：
3. **Application fields and module examples:**
- **Power supply module:** STD7NM80T4-VB can be widely used in power management systems, especially in high-voltage power modules. Its high drain-source voltage of 800V is suitable for the design of industrial power supplies and home appliance power supplies to ensure high voltage stability and efficiency and avoid current loss.
- **Voltage regulator:** In automation and communication equipment, STD7NM80T4-VB can be used as the core component of the voltage regulator to achieve efficient voltage conversion and regulation by controlling the current flow. Its low RDS(ON) can significantly reduce power loss and improve system performance.
- **Inverter:** In solar inverters, UPS (uninterruptible power supply) and other renewable energy systems, STD7NM80T4-VB can efficiently control the conversion of current and voltage, especially suitable for high voltage and high current applications.
- **Switching Power Supply (SMPS):** This MOSFET can be used in switching power supply (SMPS) design, especially in high-frequency switching. Its high withstand voltage and low on-resistance can significantly improve the system's energy efficiency and reduce heat generation.
Through these application examples, we can see the diversity and applicability of STD7NM80T4-VB, which is particularly suitable for high voltage and high current demand occasions.
- **Power supply module:** STD7NM80T4-VB can be widely used in power management systems, especially in high-voltage power modules. Its high drain-source voltage of 800V is suitable for the design of industrial power supplies and home appliance power supplies to ensure high voltage stability and efficiency and avoid current loss.
- **Voltage regulator:** In automation and communication equipment, STD7NM80T4-VB can be used as the core component of the voltage regulator to achieve efficient voltage conversion and regulation by controlling the current flow. Its low RDS(ON) can significantly reduce power loss and improve system performance.
- **Inverter:** In solar inverters, UPS (uninterruptible power supply) and other renewable energy systems, STD7NM80T4-VB can efficiently control the conversion of current and voltage, especially suitable for high voltage and high current applications.
- **Switching Power Supply (SMPS):** This MOSFET can be used in switching power supply (SMPS) design, especially in high-frequency switching. Its high withstand voltage and low on-resistance can significantly improve the system's energy efficiency and reduce heat generation.
Through these application examples, we can see the diversity and applicability of STD7NM80T4-VB, which is particularly suitable for high voltage and high current demand occasions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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