STD7NM80-1-VB Product details
Product introduction:
STD7NM80-1-VB is a high voltage, low on-resistance unipolar N-channel MOSFET packaged in TO251, designed for high-efficiency switching applications. The device uses advanced super junction (SJ) technology and multi-epitaxy (Multi-EPI) process to provide excellent performance indicators such as high breakdown voltage and low RDS(ON) to meet the needs of harsh industrial and commercial environments. Its 800V VDS and 7A maximum continuous current make it an ideal choice for high power density applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 800V | 3.5V | 7A | 850mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
| Parameter | Specification | Description |
|-------------------|---------------------|---------------------------------------------------|
| **Package** | TO251 | Compact package for easy heat dissipation and installation |
| **Channel type** | Single N-channel | Provides high switching speed and low loss |
| **Drain-source voltage (VDS)** | 800V | Suitable for applications in high voltage environments |
| **Gate-source voltage (VGS)** | ±30V | Provides sufficient gate drive margin |
| **Threshold voltage (Vth)** | 3.5V | Minimum voltage required for gate turn-on |
| **On-resistance (RDS(ON))** | 850mΩ @ VGS=10V | Resistance in the on state, reducing conduction loss |
| **Drain current (ID)** | 7A | Maximum continuous current capability for loads with medium power requirements |
| **Technology Type** | SJ_Multi-EPI | Provides lower losses, higher efficiency and enhanced thermal stability |
Domain and module applications:
1. **Power Modules**
The STD7NM80-1-VB is commonly used in high-voltage switch mode power supplies (SMPS), such as LED drivers and adapters. Its high breakdown voltage and low conduction losses make it an excellent choice for applications that require high energy efficiency.
2. **Motor Control**
In industrial motors and small household appliances, the STD7NM80-1-VB can be used as a switching device in inverters or DC-DC converters, helping to improve system efficiency and reduce energy waste.
3. **Industrial Automation**
In high-voltage control applications, such as relay replacement, battery management systems (BMS), and industrial controllers, this MOSFET offers high reliability and a wide voltage operating range.
4. **Lighting Systems**
Used in high-efficiency LED lighting circuits, it supports constant current drive and reduces heat generation, extending lamp life.
5. **New energy field**
In modules such as solar photovoltaic inverters and wind energy converters, the device can withstand high voltage and optimize switching performance to improve overall system efficiency.
Technical support:
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