STD7NM64N-VB Product details
Product introduction:
STD7NM64N-VB is a high-performance N-channel power MOSFET, using TO252 package, with low on-resistance and high voltage resistance, suitable for high-efficiency switching applications. Its super junction (SJ) multi-layer EPI technology enables it to have excellent performance in high-voltage applications, including low conduction loss and fast switching characteristics, especially suitable for scenarios requiring high power density and high efficiency.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
| **Parameter** | **Value** | **Description** |
|---------------------|--------------------------------|-------------------------------------------------------------------------|
| **Package Type** | TO252 | Compact surface mount package, suitable for high-density application design. |
| **Configuration** | Single N-channel | Only one N-channel for standardized power transmission. |
| **Drain-Source Voltage (VDS)** | 650V | Provides high voltage tolerance, suitable for high-power switching circuits. |
| **Gate-Source Voltage (VGS)** | ±30V | Supports a wide driving voltage range, increasing application flexibility. |
| **Turning Voltage (Vth)** | 3.5V | Ensures stable switching performance at low driving voltage. |
| **On-resistance (RDS(ON))** | 1000mΩ @ VGS=10V | Low conduction loss, improve system efficiency. |
| **Maximum drain current (ID)** | 5A | Supports medium current load, suitable for a variety of power conversion scenarios. |
| **Technology** | SJ_Multi-EPI | Combination of super junction technology and multi-layer EPI process, taking into account both low on-resistance and high breakdown voltage. |
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Domain and module applications:
1. **Industrial control equipment**
- In industrial equipment such as motor drives, power conversion and industrial control modules, the high withstand voltage and low loss characteristics of this MOSFET ensure reliability and efficiency.
2. **Photovoltaic inverter**
- The STD7NM64N-VB is suitable for DC-DC and DC-AC conversion modules of photovoltaic inverters. Its high voltage withstand characteristics can cope with high voltage fluctuations in solar energy systems.
3. **LED driver power supply**
- In LED lighting systems, it can be used for power regulation and switching circuits, providing efficient current control and low power consumption.
4. **Household appliances**
- Suitable for high-voltage power regulation circuits of household appliances such as microwave ovens and induction cookers, providing reliable current control and efficient switching operations.
5. **Battery Charge and Discharge Management**
- Its low RDS(ON) and high withstand voltage characteristics make it an ideal choice for charge and discharge circuit modules in energy storage systems.
6. **Consumer Electronic Devices**
- It can be used in high-efficiency chargers, adapters and other high-voltage power management devices to reduce power loss and heat generation.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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