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STD7NM64N-VB Product details

Product introduction:

STD7NM64N-VB Product Introduction

STD7NM64N-VB is a high-performance N-channel power MOSFET, using TO252 package, with low on-resistance and high voltage resistance, suitable for high-efficiency switching applications. Its super junction (SJ) multi-layer EPI technology enables it to have excellent performance in high-voltage applications, including low conduction loss and fast switching characteristics, especially suitable for scenarios requiring high power density and high efficiency.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 650V 3.5V 5A 1000mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 650V 3.5V 5A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 650V 3.5V 5A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
Detailed product parameter description

| **Parameter** | **Value** | **Description** |
|---------------------|--------------------------------|-------------------------------------------------------------------------|
| **Package Type** | TO252 | Compact surface mount package, suitable for high-density application design. |
| **Configuration** | Single N-channel | Only one N-channel for standardized power transmission. |
| **Drain-Source Voltage (VDS)** | 650V | Provides high voltage tolerance, suitable for high-power switching circuits. |
| **Gate-Source Voltage (VGS)** | ±30V | Supports a wide driving voltage range, increasing application flexibility. |
| **Turning Voltage (Vth)** | 3.5V | Ensures stable switching performance at low driving voltage. |
| **On-resistance (RDS(ON))** | 1000mΩ @ VGS=10V | Low conduction loss, improve system efficiency. |
| **Maximum drain current (ID)** | 5A | Supports medium current load, suitable for a variety of power conversion scenarios. |
| **Technology** | SJ_Multi-EPI | Combination of super junction technology and multi-layer EPI process, taking into account both low on-resistance and high breakdown voltage. |

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Domain and module applications:

Application fields and module examples

1. **Industrial control equipment**
- In industrial equipment such as motor drives, power conversion and industrial control modules, the high withstand voltage and low loss characteristics of this MOSFET ensure reliability and efficiency.

2. **Photovoltaic inverter**
- The STD7NM64N-VB is suitable for DC-DC and DC-AC conversion modules of photovoltaic inverters. Its high voltage withstand characteristics can cope with high voltage fluctuations in solar energy systems.

3. **LED driver power supply**
- In LED lighting systems, it can be used for power regulation and switching circuits, providing efficient current control and low power consumption.

4. **Household appliances**
- Suitable for high-voltage power regulation circuits of household appliances such as microwave ovens and induction cookers, providing reliable current control and efficient switching operations.

5. **Battery Charge and Discharge Management**
- Its low RDS(ON) and high withstand voltage characteristics make it an ideal choice for charge and discharge circuit modules in energy storage systems.

6. **Consumer Electronic Devices**
- It can be used in high-efficiency chargers, adapters and other high-voltage power management devices to reduce power loss and heat generation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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