STD7NM60N-VB Product details
Product introduction:
STD7NM60N-VB is a high-performance Super-Junction MOSFET in TO252 package, designed to meet the needs of high-voltage and high-efficiency applications. It has a drain-source voltage (VDS) of 650V, can withstand a gate-source voltage (VGS) of ±30V, and achieves an on-resistance (RDS(ON)) of 700mΩ at VGS = 10V, with a maximum continuous drain current capability of 7A. Based on advanced SJ_Multi-EPI technology, the device can provide lower conduction losses and better efficiency performance in high-voltage environments, and is very suitable for scenarios with high power density requirements.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
| **Parameter** | **Description** |
|-----------------------|-------------------------------------------------------------|
| **Package type** | TO252 |
| **Polarity** | Single N-Channel |
| **Drain-source voltage (VDS)** | 650V |
| **Gate-source voltage (VGS)** | ±30V |
| **Throughput voltage (Vth)** | 3.5V |
| **On-resistance (RDS(ON))** | 700mΩ @ VGS=10V |
| **Drain current (ID)** | 7A |
| **Technology** | SJ_Multi-EPI |
| **Power consumption (Ptot)** | 50W (Typical value, depending on heat dissipation conditions) |
| **Operating temperature range** | -55°C to +150°C |
| **Package size** | Compact TO252 for higher power density and PCB layout optimization|
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Domain and module applications:
1. **Power conversion module**
STD7NM60N-VB is suitable for medium and high power AC-DC and DC-DC converters, such as industrial power supplies, server power supplies, home appliance power adapters, etc. Its high withstand voltage characteristics and low conduction loss can effectively reduce energy loss and improve system efficiency.
2. **Lighting drive circuit**
In the design of high-voltage constant current sources for LED drives and street lighting, the low RDS(ON) characteristics of this MOSFET help reduce power loss while providing high stability and reliability.
3. **Industrial control and motor drive**
STD7NM60N-VB can be used in variable frequency controllers for small and medium-sized motors, especially for scenarios that require high voltage drive. Its high current capacity and stable performance can meet the needs of industrial automation equipment.
4. **Battery Management System (BMS)**
A charge and discharge management module for high-voltage lithium-ion battery packs. Its high withstand voltage characteristics can cope with overvoltage and surge conditions in the battery pack and provide reliable protection.
5. **Solar Inverter and UPS System**
As a key switching element in solar systems, the high withstand voltage characteristics of the STD7NM60N-VB can withstand the high voltage requirements of the inverter while maintaining high efficiency operation. In UPS systems, the device can also provide efficient energy conversion support in emergency situations.
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The STD7NM60N-VB is a very flexible MOSFET suitable for scenarios requiring high voltage, high efficiency and reliability. Its stable performance makes it an ideal choice in a variety of module designs.
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