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STD7NM50N-VB Product details
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Product Introduction
**STD7NM50N-VB** is a high-performance single N-channel power MOSFET in TO252 package. Its design combines Super-Junction (SJ) and Multi-EPI technology to provide high breakdown voltage (650V), low on-resistance (700mΩ@VGS=10V) and stable gate voltage performance (VGS ±30V). These features make it suitable for high-voltage, high-efficiency power management applications.
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**STD7NM50N-VB** is a high-performance single N-channel power MOSFET in TO252 package. Its design combines Super-Junction (SJ) and Multi-EPI technology to provide high breakdown voltage (650V), low on-resistance (700mΩ@VGS=10V) and stable gate voltage performance (VGS ±30V). These features make it suitable for high-voltage, high-efficiency power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
The following are the key parameters and performance indicators of **STD7NM50N-VB**:
| Parameter | Value | Unit | Description|
|------------------|-------------------------------|--------------|--------------------------------------|
| **Package Type** | TO252 | — | Compact package, suitable for PCB surface mounting. |
| **Channel Type** | Single N-channel| — | Provides efficient turn-on and turn-off performance. |
| **Drain-Source Voltage (VDS)** | 650 | V | Maximum drain-source voltage that can be tolerated, suitable for high-voltage environments. |
| **Gate-Source Voltage (VGS)** | ±30 | V | The range of positive and negative voltages that the gate can tolerate. |
| **Threshold Voltage (Vth)** | 3.5 | V | The gate-source voltage required to start conduction. |
| **On-resistance (RDS(ON))** | 700 | mΩ | Maximum on-resistance at VGS=10V, ensuring low conduction loss. |
| **Drain current (ID)** | 7 | A | Maximum continuous operating current capability. |
| **Technology** | SJ_Multi-EPI | — | Provides higher voltage blocking capability and efficiency. |
| **Operating temperature range** | -55 ~ 150 | ℃ | Adapts to extreme ambient temperature changes. |
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The following are the key parameters and performance indicators of **STD7NM50N-VB**:
| Parameter | Value | Unit | Description|
|------------------|-------------------------------|--------------|--------------------------------------|
| **Package Type** | TO252 | — | Compact package, suitable for PCB surface mounting. |
| **Channel Type** | Single N-channel| — | Provides efficient turn-on and turn-off performance. |
| **Drain-Source Voltage (VDS)** | 650 | V | Maximum drain-source voltage that can be tolerated, suitable for high-voltage environments. |
| **Gate-Source Voltage (VGS)** | ±30 | V | The range of positive and negative voltages that the gate can tolerate. |
| **Threshold Voltage (Vth)** | 3.5 | V | The gate-source voltage required to start conduction. |
| **On-resistance (RDS(ON))** | 700 | mΩ | Maximum on-resistance at VGS=10V, ensuring low conduction loss. |
| **Drain current (ID)** | 7 | A | Maximum continuous operating current capability. |
| **Technology** | SJ_Multi-EPI | — | Provides higher voltage blocking capability and efficiency. |
| **Operating temperature range** | -55 ~ 150 | ℃ | Adapts to extreme ambient temperature changes. |
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Domain and module applications：
Application fields and module examples
**STD7NM50N-VB** is widely used in many fields and modules. The following are typical scenarios:
1. **Switching Power Supply (SMPS)**
In the switching power supply, STD7NM50N-VB is used as the main power switch. Its high voltage blocking capability and low on-resistance improve the power conversion efficiency. It is especially suitable for TV, desktop computer and industrial power supply modules.
2. **LED Driver**
Its high breakdown voltage and stable performance make it very suitable for high-power LED drivers, ensuring efficient current control and long-term reliable operation.
3. **Industrial Motor Control**
In industrial drive systems, the device can be used as a component of a half-bridge or full-bridge for high-voltage DC motor drive, improving the overall system efficiency through its low loss characteristics.
4. **Home appliances and air conditioning systems**
STD7NM50N-VB is suitable for PFC (power factor correction) circuits and inverter modules in home appliances. Its high withstand voltage and good heat dissipation characteristics support long-term stable operation of home appliances.
5. **Renewable energy systems**
In photovoltaic inverters and wind power generation systems, this MOSFET can be used as a key switching element in boost converters or inverter bridges to ensure efficient power conversion and equipment stability.
Through the above applications, it can be seen that **STD7NM50N-VB** is a MOSFET that performs well in high-voltage, high-efficiency applications, and is very suitable for industrial and consumer electronics.
**STD7NM50N-VB** is widely used in many fields and modules. The following are typical scenarios:
1. **Switching Power Supply (SMPS)**
In the switching power supply, STD7NM50N-VB is used as the main power switch. Its high voltage blocking capability and low on-resistance improve the power conversion efficiency. It is especially suitable for TV, desktop computer and industrial power supply modules.
2. **LED Driver**
Its high breakdown voltage and stable performance make it very suitable for high-power LED drivers, ensuring efficient current control and long-term reliable operation.
3. **Industrial Motor Control**
In industrial drive systems, the device can be used as a component of a half-bridge or full-bridge for high-voltage DC motor drive, improving the overall system efficiency through its low loss characteristics.
4. **Home appliances and air conditioning systems**
STD7NM50N-VB is suitable for PFC (power factor correction) circuits and inverter modules in home appliances. Its high withstand voltage and good heat dissipation characteristics support long-term stable operation of home appliances.
5. **Renewable energy systems**
In photovoltaic inverters and wind power generation systems, this MOSFET can be used as a key switching element in boost converters or inverter bridges to ensure efficient power conversion and equipment stability.
Through the above applications, it can be seen that **STD7NM50N-VB** is a MOSFET that performs well in high-voltage, high-efficiency applications, and is very suitable for industrial and consumer electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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