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STD7NK40ZT4-VB Product details

Product introduction:

Product Introduction

**STD7NK40ZT4-VB** is a high-performance single-channel N-channel MOSFET in TO252 package, supporting 650V drain-source voltage (VDS) and 30V (±) gate-source voltage (VGS). The device is manufactured using advanced Super-Junction (SJ) multi-layer epitaxial (Multi-EPI) technology and has high breakdown voltage and low on-resistance characteristics. Its on-resistance (RDS(ON)) is 700mΩ (at VGS=10V) and the maximum continuous drain current is 7A. These features give the STD7NK40ZT4-VB excellent performance and reliability in high-efficiency and high-voltage applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 650V 3.5V 7A 700mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 650V 3.5V 7A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 650V 3.5V 7A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
Detailed parameter description

| **Parameter** | **Value** | **Description** |
|-----------------------|--------------------------|---------------------------------------------------------|
| **Package** | TO252 | Surface mount package with low thermal resistance and compact size. |
| **Channel Configuration** | Single N-channel | Single conduction path simplifies design and reduces cost. |
| **Drain-Source Voltage (VDS)** | 650V | Supports high voltage applications. |
| **Gate-Source Voltage (VGS)** | ±30V | Provides a wide driving voltage range. |
| **Threshold Voltage (Vth)** | 3.5V | Indicates the minimum gate voltage required for the device to turn on. |
| **On-Resistance (RDS(ON))** | 700mΩ@VGS=10V | Low on-resistance helps reduce power consumption and improve efficiency. |
| **Drain Current (ID)** | 7A | Supports up to 7 amps of continuous current. |
| **Technology** | SJ_Multi-EPI | Superjunction technology combined with multi-layer epitaxy optimizes efficiency and power density. |

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Domain and module applications:

Applicable fields and modules

**1. Energy conversion and distribution field**
- **Solar inverter**: The high voltage capability and low power consumption characteristics of STD7NK40ZT4-VB make it suitable for DC-AC conversion modules in solar energy systems to optimize energy efficiency.
- **Uninterruptible power supply (UPS)**: Suitable for modules that require efficient power switching, such as rectifiers and switching circuits.

**2. Industrial automation equipment**
- **Motor drive**: The high breakdown voltage and low conduction loss of MOSFET make it an ideal choice for industrial motor control units.
- **Industrial power supply**: Supports high power density and reliability requirements, such as inverters and industrial-grade power modules.

**3. Consumer electronics and home appliances**
- **Power adapter**: Widely used in high-power power adapters to improve conversion efficiency and reduce heat dissipation.
- **Air conditioners and washing machines**: Applicable to PFC (power factor correction) circuit modules and inverter modules in home appliances to enhance energy-saving performance.

**4. Lighting systems**
- **LED driver**: High voltage capability enables it to stably drive high-power LEDs, improving the reliability and life of lighting equipment.

The versatility and excellent performance of this device make it an ideal choice for high-voltage, high-efficiency fields, with wide application potential in industrial and consumer markets.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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