STD7NK40ZT4-VB Product details
Product introduction:
**STD7NK40ZT4-VB** is a high-performance single-channel N-channel MOSFET in TO252 package, supporting 650V drain-source voltage (VDS) and 30V (±) gate-source voltage (VGS). The device is manufactured using advanced Super-Junction (SJ) multi-layer epitaxial (Multi-EPI) technology and has high breakdown voltage and low on-resistance characteristics. Its on-resistance (RDS(ON)) is 700mΩ (at VGS=10V) and the maximum continuous drain current is 7A. These features give the STD7NK40ZT4-VB excellent performance and reliability in high-efficiency and high-voltage applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
| **Parameter** | **Value** | **Description** |
|-----------------------|--------------------------|---------------------------------------------------------|
| **Package** | TO252 | Surface mount package with low thermal resistance and compact size. |
| **Channel Configuration** | Single N-channel | Single conduction path simplifies design and reduces cost. |
| **Drain-Source Voltage (VDS)** | 650V | Supports high voltage applications. |
| **Gate-Source Voltage (VGS)** | ±30V | Provides a wide driving voltage range. |
| **Threshold Voltage (Vth)** | 3.5V | Indicates the minimum gate voltage required for the device to turn on. |
| **On-Resistance (RDS(ON))** | 700mΩ@VGS=10V | Low on-resistance helps reduce power consumption and improve efficiency. |
| **Drain Current (ID)** | 7A | Supports up to 7 amps of continuous current. |
| **Technology** | SJ_Multi-EPI | Superjunction technology combined with multi-layer epitaxy optimizes efficiency and power density. |
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Domain and module applications:
**1. Energy conversion and distribution field**
- **Solar inverter**: The high voltage capability and low power consumption characteristics of STD7NK40ZT4-VB make it suitable for DC-AC conversion modules in solar energy systems to optimize energy efficiency.
- **Uninterruptible power supply (UPS)**: Suitable for modules that require efficient power switching, such as rectifiers and switching circuits.
**2. Industrial automation equipment**
- **Motor drive**: The high breakdown voltage and low conduction loss of MOSFET make it an ideal choice for industrial motor control units.
- **Industrial power supply**: Supports high power density and reliability requirements, such as inverters and industrial-grade power modules.
**3. Consumer electronics and home appliances**
- **Power adapter**: Widely used in high-power power adapters to improve conversion efficiency and reduce heat dissipation.
- **Air conditioners and washing machines**: Applicable to PFC (power factor correction) circuit modules and inverter modules in home appliances to enhance energy-saving performance.
**4. Lighting systems**
- **LED driver**: High voltage capability enables it to stably drive high-power LEDs, improving the reliability and life of lighting equipment.
The versatility and excellent performance of this device make it an ideal choice for high-voltage, high-efficiency fields, with wide application potential in industrial and consumer markets.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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