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STD70NH02LT4-VB Product details

Product introduction:

1. STD70NH02LT4-VB Product Introduction

STD70NH02LT4-VB is a high-performance N-channel power MOSFET in TO252 package, designed for low voltage and high current applications. Its maximum drain-source voltage (VDS) is 20V, suitable for handling high current at low voltage. The gate threshold voltage (Vth) of this MOSFET ranges from 0.5V to 1.5V, and it can start to conduct at a lower gate voltage to ensure switching performance and low switching loss. The on-resistance (RDS(ON)) of STD70NH02LT4-VB is 6mΩ at VGS = 2.5V and 4.5mΩ at VGS = 4.5V. It has very low on-resistance, which can effectively reduce power loss and improve system efficiency. The maximum drain current is 100A, making it suitable for applications with high current loads. The use of Trench technology can provide better performance and thermal stability.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 20V 0.5~1.5V 100A 6mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 20V 0.5~1.5V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 20V 0.5~1.5V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
II. Detailed parameter description

| **Parameter** | **Value** | **Description** |
|--------------------------|-------------------------|----------------------------------------------|
| **Package** | TO252 | Surface mount package, suitable for high performance and compact design. |
| **Configuration** | Single N-channel | High efficiency switching characteristics, suitable for applications with large current. |
| **Drain-source voltage (VDS)** | 20V | Suitable for low voltage power supply system, capable of handling low voltage and high current. |
| **Gate-source voltage (VGS)** | ±20V | Wide gate voltage control range, supporting multiple driving methods. |
| **Gate threshold voltage (Vth)** | 0.5V ~ 1.5V | Low gate threshold voltage, ensuring turn-on at a lower voltage. |
| **On-resistance (RDS(ON))** | 6mΩ @ VGS = 2.5V | Low on-resistance, reduced power loss, improved system efficiency. |
| **On-resistance (RDS(ON))** | 4.5mΩ @ VGS = 4.5V | Further reduce resistance and improve conductivity. |
| **Maximum drain current (ID)** | 100A | Suitable for large current loads and applications with high current requirements. |
| **Technology type** | Trench | Using Trench technology, provides lower on-resistance and more efficient current transfer. |

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Domain and module applications:

3. Applicable fields and module application examples

1. **Power management**
- **High-efficiency switching power supply (SMPS)**: STD70NH02LT4-VB is widely used in switching power supply modules (SMPS) due to its low on-resistance and high current carrying capacity. During the power conversion process, low resistance helps to reduce energy loss and improve conversion efficiency. It is particularly suitable for small power adapters, power amplifiers and power tool chargers that require high current power supply.
- **DC-DC converter**: This MOSFET is suitable for power switches in DC-DC converters. It can maintain low conduction losses and optimize energy efficiency during high-efficiency voltage conversion. It is suitable for power management in consumer electronics, embedded systems and other fields.

2. **Battery management system**
- **Battery charging and battery protection circuit**: STD70NH02LT4-VB has high current carrying capacity and low on-resistance, and is suitable for battery management systems (BMS). Especially in battery protection modules for electric vehicles (EV) and portable devices, efficient battery charging and discharging control can be achieved, extending battery life and avoiding the risk of overcharging and over-discharging.
- **Battery Balancer**: In the battery balancing circuit, the STD70NH02LT4-VB can be used as an efficient current switch to help achieve power balance between different battery cells, ensuring the stability and long life of the system.

3. **Electric Vehicles (EV)**
- **Electric Vehicle Battery Management**: In the battery management system of electric vehicles, the STD70NH02LT4-VB can provide an efficient power switch to help manage high current charging and discharging processes to ensure battery safety and stability.
- **Motor Drive System**: This MOSFET is suitable for motor control modules in electric vehicle drive systems, capable of handling high current loads and providing efficient power conversion to ensure smooth vehicle start-up and operation.

4. **Industrial Applications**
- **Motor Control and Drive Systems**: STD70NH02LT4-VB is widely used in industrial automation and robotics due to its high current capacity and low on-resistance, especially in motor drive systems where motor speed and torque need to be precisely controlled. This MOSFET helps improve the system's response speed and energy efficiency and reduce power loss.
- **Power Regulator**: In power regulation and stabilization systems, STD70NH02LT4-VB can be used for power switches to help adjust and stabilize voltage and current, improving the stability and efficiency of power equipment.

5. **Consumer Electronics**
- **Laptop Power Adapter**: STD70NH02LT4-VB is suitable for power adapters for consumer electronics such as laptops, providing efficient power conversion, reducing power loss, and improving battery life.
- **Mobile phone charger**: As a key switching element in the charger circuit, the STD70NH02LT4-VB optimizes the energy transfer efficiency during charging, shortens the charging time and improves the durability of the charger through its low on-resistance characteristics.

The low on-resistance and high current carrying capacity of the STD70NH02LT4-VB make it an ideal choice for efficient power conversion and battery management systems. It is widely used in consumer electronics, electric vehicles, power management and industrial control to meet the needs of high current and low voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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