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STD6NM60N-VB Product details
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Product Introduction: STD6NM60N-VB
STD6NM60N-VB is a high-efficiency single N-channel power MOSFET with a TO252 package and a drain-source voltage (VDS) of 650V and a drain current (ID) carrying capacity of 5A. This MOSFET adopts SJ_Multi-EPI technology, has a threshold voltage (Vth) of 3.5V, and an on-resistance (RDS(ON)@VGS=10V) of 1000mΩ. This makes it provide excellent efficiency and stability in power management, drive and high-voltage conversion applications.
The high voltage tolerance, low on-resistance and excellent switching performance of STD6NM60N-VB make it widely used in fields such as power conversion, motor drive, lighting control, battery management, etc. Its high efficiency performance helps to improve the efficiency of the system and reduce power consumption.
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STD6NM60N-VB is a high-efficiency single N-channel power MOSFET with a TO252 package and a drain-source voltage (VDS) of 650V and a drain current (ID) carrying capacity of 5A. This MOSFET adopts SJ_Multi-EPI technology, has a threshold voltage (Vth) of 3.5V, and an on-resistance (RDS(ON)@VGS=10V) of 1000mΩ. This makes it provide excellent efficiency and stability in power management, drive and high-voltage conversion applications.
The high voltage tolerance, low on-resistance and excellent switching performance of STD6NM60N-VB make it widely used in fields such as power conversion, motor drive, lighting control, battery management, etc. Its high efficiency performance helps to improve the efficiency of the system and reduce power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
| **Parameter** | **Value** | **Description** |
|-----------------------|---------------------------------|--------------------------------------------|
| **Package** | TO252 | Compact package, suitable for surface mounting, with good heat dissipation performance. |
| **Configuration** | Single N-channel | Simplified switch control, suitable for a variety of power conversion applications. |
| **Drain-source voltage (VDS)** | 650V | High voltage tolerance, suitable for switching circuits in high voltage environments. |
| **Gate voltage (VGS)** | ±30V | High gate voltage tolerance, suitable for a variety of power management applications. |
| **Threshold voltage (Vth)** | 3.5V | Stable switching characteristics, suitable for different power control requirements. |
| **On-resistance (RDS(ON))** | 1000mΩ@VGS=10V | Lower on-resistance, improved efficiency, reduced energy loss. |
| **Drain Current (ID)** | 5A | Supports moderate current load, suitable for medium power applications. |
| **Technology** | SJ_Multi-EPI | Multi-junction structure technology, resulting in low on-resistance and high efficiency. |
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| **Parameter** | **Value** | **Description** |
|-----------------------|---------------------------------|--------------------------------------------|
| **Package** | TO252 | Compact package, suitable for surface mounting, with good heat dissipation performance. |
| **Configuration** | Single N-channel | Simplified switch control, suitable for a variety of power conversion applications. |
| **Drain-source voltage (VDS)** | 650V | High voltage tolerance, suitable for switching circuits in high voltage environments. |
| **Gate voltage (VGS)** | ±30V | High gate voltage tolerance, suitable for a variety of power management applications. |
| **Threshold voltage (Vth)** | 3.5V | Stable switching characteristics, suitable for different power control requirements. |
| **On-resistance (RDS(ON))** | 1000mΩ@VGS=10V | Lower on-resistance, improved efficiency, reduced energy loss. |
| **Drain Current (ID)** | 5A | Supports moderate current load, suitable for medium power applications. |
| **Technology** | SJ_Multi-EPI | Multi-junction structure technology, resulting in low on-resistance and high efficiency. |
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Domain and module applications：
Application fields and module examples
1. **Power converter**
STD6NM60N-VB is an ideal switching element in power converters, especially in high voltage and medium power power management applications. Its 650V drain-source voltage and low on-resistance enable it to efficiently convert voltages and is suitable for AC-DC converters and DC-DC converters.
2. **Motor drive**
In the motor drive module, STD6NM60N-VB is suitable for driving various motors such as air conditioners, fans, household electric tools, etc. due to its high voltage tolerance and efficient switching performance. Low on-resistance effectively reduces power loss and improves the working efficiency of the motor.
3. **LED lighting drive**
This MOSFET is widely used in LED lighting drive circuits. Through efficient current control and low power consumption, it ensures the stable operation of high-brightness LEDs, and can effectively manage heat and extend the service life of LEDs.
4. **Battery Management System (BMS)**
In the battery management system, the STD6NM60N-VB can be used for efficient charge and discharge control. Its high voltage tolerance and low on-resistance make it an ideal switching element, which can effectively improve battery charging efficiency, reduce energy loss, and extend battery life.
5. **Power Factor Correction (PFC) Module**
Due to its high voltage tolerance and excellent switching performance, the STD6NM60N-VB is suitable for power factor correction modules. It can reduce power loss in high-efficiency power conversion and improve overall power efficiency.
6. **Switching Power Supply**
In the switching power supply, the STD6NM60N-VB is used as a switching device, which can provide excellent efficiency and stability in high voltage applications. Its low on-resistance helps reduce power loss and improve conversion efficiency, especially for TVs, power adapters and industrial power supplies.
7. **Industrial Control Systems**
This MOSFET performs well in industrial control modules and is suitable for the control of various high-voltage loads, such as automation systems, power transmission systems, etc. Its high-voltage resistance enables it to cope with the needs of high-power, fast switching.
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1. **Power converter**
STD6NM60N-VB is an ideal switching element in power converters, especially in high voltage and medium power power management applications. Its 650V drain-source voltage and low on-resistance enable it to efficiently convert voltages and is suitable for AC-DC converters and DC-DC converters.
2. **Motor drive**
In the motor drive module, STD6NM60N-VB is suitable for driving various motors such as air conditioners, fans, household electric tools, etc. due to its high voltage tolerance and efficient switching performance. Low on-resistance effectively reduces power loss and improves the working efficiency of the motor.
3. **LED lighting drive**
This MOSFET is widely used in LED lighting drive circuits. Through efficient current control and low power consumption, it ensures the stable operation of high-brightness LEDs, and can effectively manage heat and extend the service life of LEDs.
4. **Battery Management System (BMS)**
In the battery management system, the STD6NM60N-VB can be used for efficient charge and discharge control. Its high voltage tolerance and low on-resistance make it an ideal switching element, which can effectively improve battery charging efficiency, reduce energy loss, and extend battery life.
5. **Power Factor Correction (PFC) Module**
Due to its high voltage tolerance and excellent switching performance, the STD6NM60N-VB is suitable for power factor correction modules. It can reduce power loss in high-efficiency power conversion and improve overall power efficiency.
6. **Switching Power Supply**
In the switching power supply, the STD6NM60N-VB is used as a switching device, which can provide excellent efficiency and stability in high voltage applications. Its low on-resistance helps reduce power loss and improve conversion efficiency, especially for TVs, power adapters and industrial power supplies.
7. **Industrial Control Systems**
This MOSFET performs well in industrial control modules and is suitable for the control of various high-voltage loads, such as automation systems, power transmission systems, etc. Its high-voltage resistance enables it to cope with the needs of high-power, fast switching.
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* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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