Featured Model

Last updated:

STD6N95K5-VB Product details

Product introduction:

Product Introduction

STD6N95K5-VB is a high-performance single N-channel power MOSFET in TO-252 package with high withstand voltage (900V), suitable for circuits with high voltage and high power requirements. The maximum drain current (ID) of this MOSFET is 7A, and it adopts SJ_Multi-EPI technology, which makes it have low on-resistance and excellent switching performance, ensuring high efficiency in high-power applications.

Its threshold voltage (Vth) is 3.5V, and the operating gate-source voltage (VGS) range is ±30V, making it widely used in various power management and load control systems. The on-resistance is 770mΩ at VGS = 10V, which can effectively reduce energy loss while maintaining low heat generation, helping to improve system reliability and operating efficiency.

This MOSFET is particularly suitable for high-voltage and high-current power electronic equipment, and is widely used in power supply, battery management, and industrial equipment, providing good power conversion efficiency and efficient thermal management.

---

File download

Download PDF document
Download now

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 900V 3.5V 7A 770mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 900V 3.5V 7A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 900V 3.5V 7A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
Detailed parameter description

| **Parameter** | **Value** | **Description** |
|-------------------------|------------------------------------------|-----------------------------------------------------|
| **Package** | TO-252 | Small package, suitable for space-constrained but high-power applications|
| **Configuration** | Unipolar N-channel | Suitable for switching power supplies and power control applications|
| **Maximum drain-source voltage (VDS)** | 900V | High voltage withstand capability, suitable for power conversion and high voltage applications|
| **Maximum gate-source voltage (VGS)** | ±30V | Wide gate drive voltage range, suitable for different control circuits|
| **Threshold voltage (Vth)** | 3.5V | Suitable for low-voltage drive systems, with relatively stable startup characteristics|
| **On-resistance (RDS(ON))** | 770mΩ @ VGS = 10V | Low on-resistance, reduced conduction losses, optimized efficiency|
| **Maximum drain current (ID)** | 7A | High current carrying capability for high power load applications|
| **Technology** | SJ_Multi-EPI | SJ_Multi-EPI technology optimizes on-resistance and switching performance|

---

Domain and module applications:

Application fields and module examples

1. **High voltage power converter**
STD6N95K5-VB is suitable for high voltage power converters, especially DC-DC converters that require high efficiency. Its 900V withstand voltage capability enables it to handle high voltage inputs and is suitable for use in industrial power supplies and high power charging equipment. Low on-resistance ensures minimal energy loss, thereby improving overall efficiency.

2. **Electric Vehicles (EV) and Battery Management Systems (BMS)**
This MOSFET is suitable for battery management systems and charging systems in electric vehicles, especially current control of high-voltage batteries. Due to its low on-resistance and high withstand voltage characteristics, it can provide efficient power conversion in battery charging and battery protection systems while ensuring system stability and reliability.

3. **Industrial power electronics equipment**
STD6N95K5-VB can be used as a switching element in industrial power electronics equipment, especially in high power motor drive and power conversion applications. Its high withstand voltage of 900V and low on-resistance enable it to operate stably in high-voltage environments and is suitable for applications requiring fast switching response.

4. **Power Factor Correction (PFC) Circuits**
This MOSFET is suitable for use in power factor correction circuits, especially in situations with high voltage input and high power demand. Low on-resistance can reduce energy loss, ensure circuit operation efficiency, and improve the overall power factor and stability of the PFC circuit.

5. **Renewable Energy Systems**
In solar and wind power generation systems, the STD6N95K5-VB can be used in power inverters and power transmission equipment. Its high voltage tolerance and high current handling capabilities enable it to perform well in these systems, especially in the process of converting high-voltage DC to AC, which can effectively reduce power losses.

6. **High-power Lasers and Medical Equipment**
The STD6N95K5-VB can also be used in power conversion circuits of high-power laser systems and medical equipment to provide reliable power support. The high voltage tolerance makes it suitable for complex applications in medical equipment that require precise power control.

In summary, the STD6N95K5-VB is suitable for power electronics fields that require high voltage and high current processing, such as power management, charging systems, industrial power conversion, and renewable energy applications, providing efficient and reliable solutions for various high-power devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

WeChat

Topping

Sample Req
Online
Telephone
WeChat