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STD6N52K3-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
**STD6N52K3-VB** is a single N-channel power MOSFET in TO252 package with a maximum drain-source voltage of 650V, suitable for high-voltage power conversion and switching applications. Its on-resistance is 1000mΩ@VGS=10V, and it supports a maximum drain current of 5A. Combined with SJ_Multi-EPI technology, it can provide low conduction losses and excellent switching characteristics, and is suitable for industrial power supplies, battery management, home appliances, and automotive circuits. The high withstand voltage, low on-resistance and reliability of this MOSFET make it an ideal choice for high-efficiency power management and switching systems.
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**STD6N52K3-VB** is a single N-channel power MOSFET in TO252 package with a maximum drain-source voltage of 650V, suitable for high-voltage power conversion and switching applications. Its on-resistance is 1000mΩ@VGS=10V, and it supports a maximum drain current of 5A. Combined with SJ_Multi-EPI technology, it can provide low conduction losses and excellent switching characteristics, and is suitable for industrial power supplies, battery management, home appliances, and automotive circuits. The high withstand voltage, low on-resistance and reliability of this MOSFET make it an ideal choice for high-efficiency power management and switching systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. Detailed parameter description
| **Parameter** | **Value** | **Description** |
|----------------------|--------------------------------------------|--------------------------------------------------------------|
| **Package** | TO252 | TO252 package, suitable for low power and medium power applications, convenient for installation in limited space|
| **Configuration** | Single N-channel | Single N-channel MOSFET configuration, suitable for switching circuits and power conversion|
| **VDS** | 650V | Maximum drain-source voltage 650V, suitable for high voltage applications|
| **VGS** | ±30V | Supports a gate-source voltage range of ±30V, suitable for a variety of drive circuits|
| **Vth** | 3.5V | Threshold voltage of 3.5V ensures efficient switching operation|
| **RDS(ON)** | 1000mΩ@VGS=10V | On-resistance 1000mΩ@VGS=10V, suitable for medium to high current load applications|
| **ID** | 5A | Maximum drain current 5A, suitable for medium current load applications|
| **Technology** | SJ_Multi-EPI | SJ_Multi-EPI technology optimizes MOSFET switching performance and low on-resistance characteristics|
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| **Parameter** | **Value** | **Description** |
|----------------------|--------------------------------------------|--------------------------------------------------------------|
| **Package** | TO252 | TO252 package, suitable for low power and medium power applications, convenient for installation in limited space|
| **Configuration** | Single N-channel | Single N-channel MOSFET configuration, suitable for switching circuits and power conversion|
| **VDS** | 650V | Maximum drain-source voltage 650V, suitable for high voltage applications|
| **VGS** | ±30V | Supports a gate-source voltage range of ±30V, suitable for a variety of drive circuits|
| **Vth** | 3.5V | Threshold voltage of 3.5V ensures efficient switching operation|
| **RDS(ON)** | 1000mΩ@VGS=10V | On-resistance 1000mΩ@VGS=10V, suitable for medium to high current load applications|
| **ID** | 5A | Maximum drain current 5A, suitable for medium current load applications|
| **Technology** | SJ_Multi-EPI | SJ_Multi-EPI technology optimizes MOSFET switching performance and low on-resistance characteristics|
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Domain and module applications：
3. Application fields and module examples
1. **Power management**
**Switching power supply (SMPS)**: STD6N52K3-VB is widely used in switching power supplies (SMPS), especially in situations where high voltage tolerance and efficient power conversion are required. This MOSFET can reduce energy loss and improve power conversion efficiency through its low on-resistance and high current carrying capacity.
**Battery management system**: In the battery management system, STD6N52K3-VB acts as a current switching element to ensure stable and reliable power flow during battery charging and discharging. Its high withstand voltage and low loss characteristics make it particularly suitable for battery management in electric vehicles, UPS and communication equipment.
2. **Industrial applications**
**Motor drive control**: In industrial motor control applications, STD6N52K3-VB can effectively control the power conversion of the motor and provide a smooth and efficient drive signal. Its high voltage and medium current capabilities make it suitable for control circuits of various motor types.
**Industrial power modules**: In industrial power modules, STD6N52K3-VB can be used as a switching element to handle high-power power conversion and meet the stable power needs of industrial equipment, especially in applications that require high efficiency and low heat.
3. **Consumer electronics**
**TV power modules**: This MOSFET is widely used in power modules for consumer electronics such as TVs, and can provide efficient power conversion to ensure the stability and low energy consumption of the equipment.
**LED driver power**: In LED driver power, STD6N52K3-VB, as a key switching element, helps improve the power efficiency of the LED system and reduce heat generation, thereby extending the service life of the LED lamp.
4. **Automotive electronics**
**Electric vehicle charging system**: As a power switching element in the electric vehicle charging system, STD6N52K3-VB can provide efficient current conversion to ensure stability and safety during the charging process.
**Automotive power management system**: In automotive power management systems, STD6N52K3-VB is used for efficient power conversion, supports stable operation of on-board electrical equipment, and reduces power loss.
5. **Communication equipment**
**Base station power module**: STD6N52K3-VB can be used in the power management module of communication base stations to optimize power conversion, ensure stable operation of equipment and improve the overall efficiency of the system.
**Network equipment power supply**: In network equipment such as routers and switches, STD6N52K3-VB is used as a switching element to ensure the stability and reliability of the power supply and reduce the energy loss of the system.
1. **Power management**
**Switching power supply (SMPS)**: STD6N52K3-VB is widely used in switching power supplies (SMPS), especially in situations where high voltage tolerance and efficient power conversion are required. This MOSFET can reduce energy loss and improve power conversion efficiency through its low on-resistance and high current carrying capacity.
**Battery management system**: In the battery management system, STD6N52K3-VB acts as a current switching element to ensure stable and reliable power flow during battery charging and discharging. Its high withstand voltage and low loss characteristics make it particularly suitable for battery management in electric vehicles, UPS and communication equipment.
2. **Industrial applications**
**Motor drive control**: In industrial motor control applications, STD6N52K3-VB can effectively control the power conversion of the motor and provide a smooth and efficient drive signal. Its high voltage and medium current capabilities make it suitable for control circuits of various motor types.
**Industrial power modules**: In industrial power modules, STD6N52K3-VB can be used as a switching element to handle high-power power conversion and meet the stable power needs of industrial equipment, especially in applications that require high efficiency and low heat.
3. **Consumer electronics**
**TV power modules**: This MOSFET is widely used in power modules for consumer electronics such as TVs, and can provide efficient power conversion to ensure the stability and low energy consumption of the equipment.
**LED driver power**: In LED driver power, STD6N52K3-VB, as a key switching element, helps improve the power efficiency of the LED system and reduce heat generation, thereby extending the service life of the LED lamp.
4. **Automotive electronics**
**Electric vehicle charging system**: As a power switching element in the electric vehicle charging system, STD6N52K3-VB can provide efficient current conversion to ensure stability and safety during the charging process.
**Automotive power management system**: In automotive power management systems, STD6N52K3-VB is used for efficient power conversion, supports stable operation of on-board electrical equipment, and reduces power loss.
5. **Communication equipment**
**Base station power module**: STD6N52K3-VB can be used in the power management module of communication base stations to optimize power conversion, ensure stable operation of equipment and improve the overall efficiency of the system.
**Network equipment power supply**: In network equipment such as routers and switches, STD6N52K3-VB is used as a switching element to ensure the stability and reliability of the power supply and reduce the energy loss of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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