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STD60N55-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
**STD60N55-VB** is a single N-channel power MOSFET in TO252 package, designed for high-efficiency power switching and power conversion applications. Its maximum drain-source voltage is 60V, the gate-source voltage range is ±20V, it has a low on-resistance (10mΩ@VGS=10V), and supports a maximum drain current of 58A. Combined with Trench technology, this MOSFET performs well in low switching loss and high current applications, and is widely used in power management, industrial control, consumer electronics, and automotive circuits.
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**STD60N55-VB** is a single N-channel power MOSFET in TO252 package, designed for high-efficiency power switching and power conversion applications. Its maximum drain-source voltage is 60V, the gate-source voltage range is ±20V, it has a low on-resistance (10mΩ@VGS=10V), and supports a maximum drain current of 58A. Combined with Trench technology, this MOSFET performs well in low switching loss and high current applications, and is widely used in power management, industrial control, consumer electronics, and automotive circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. Detailed parameter description
| **Parameter** | **Value** | **Description** |
|----------------------|----------------------------------------|--------------------------------------------------------------|
| **Package** | TO252 | TO252 package, suitable for applications requiring higher power and smaller size|
| **Configuration** | Single N-channel | Single N-channel MOSFET configuration, suitable for switching circuits and power conversion|
| **VDS** | 60V | Maximum drain-source voltage 60V, suitable for medium voltage applications|
| **VGS** | ±20V | Supports a gate-source voltage range of ±20V, suitable for a variety of drive circuits|
| **Vth** | 2.5V | Threshold voltage 2.5V, providing reliable switching characteristics|
| **RDS(ON)** | 13mΩ@VGS=4.5V | 13mΩ on-resistance, suitable for efficient power conversion and reduced energy loss|
| **RDS(ON)** | 10mΩ@VGS=10V | Lower on-resistance, further improving system efficiency|
| **ID** | 58A | Maximum drain current of 58A, suitable for high current loads and high power applications|
| **Technology** | Trench | Trench technology optimizes the current handling capability of the MOSFET, reduces switching losses and improves operating efficiency|
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| **Parameter** | **Value** | **Description** |
|----------------------|----------------------------------------|--------------------------------------------------------------|
| **Package** | TO252 | TO252 package, suitable for applications requiring higher power and smaller size|
| **Configuration** | Single N-channel | Single N-channel MOSFET configuration, suitable for switching circuits and power conversion|
| **VDS** | 60V | Maximum drain-source voltage 60V, suitable for medium voltage applications|
| **VGS** | ±20V | Supports a gate-source voltage range of ±20V, suitable for a variety of drive circuits|
| **Vth** | 2.5V | Threshold voltage 2.5V, providing reliable switching characteristics|
| **RDS(ON)** | 13mΩ@VGS=4.5V | 13mΩ on-resistance, suitable for efficient power conversion and reduced energy loss|
| **RDS(ON)** | 10mΩ@VGS=10V | Lower on-resistance, further improving system efficiency|
| **ID** | 58A | Maximum drain current of 58A, suitable for high current loads and high power applications|
| **Technology** | Trench | Trench technology optimizes the current handling capability of the MOSFET, reduces switching losses and improves operating efficiency|
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Domain and module applications：
3. Application fields and module examples
1. **Power management**
**Switching power supply (SMPS)**: In the switching power supply (SMPS), STD60N55-VB is used for efficient power conversion and current control. Its low on-resistance and high current capability make it very suitable for use as a switching device in the DC-DC converter to ensure efficient and stable operation of the system.
**Battery charger**: This MOSFET can be used as an efficient power switching element in the battery charger circuit to control the battery charging and discharging process and provide stable current management.
2. **Consumer electronics**
**LED driver**: STD60N55-VB is widely used in LED drive circuits as an efficient power switch to ensure low power consumption and high brightness output of LED systems. Its low RDS(ON) characteristics effectively reduce heat loss and extend the service life of LEDs.
**TV power module**: In consumer electronic devices such as TVs, STD60N55-VB is used in power management modules to achieve stable power conversion and regulation to ensure stable operation of the equipment.
3. **Industrial applications**
**Motor control**: In motor drive circuits, STD60N55-VB can be used to control the current transmission of the motor, which is particularly suitable for industrial applications with high-power motors and high current requirements. Through its low on-resistance characteristics, it ensures that the motor drive system has low heat loss and high efficiency.
**Industrial power supply**: In industrial power modules, this MOSFET is used as a switching element to provide reliable power conversion to meet the needs of industrial equipment for high current and high efficiency.
4. **Automotive electronics**
**Automotive power system**: In automotive power management systems, STD60N55-VB is used as a switching element for power converters. Its high current capability and high efficiency ensure stable operation of the vehicle's electronic systems.
**Electric vehicle charger**: This MOSFET is suitable for the charging system of electric vehicles. As a power switching element, it can achieve efficient energy transmission and improve charging efficiency and speed.
5. **Communication equipment**
**Base station power module**: In the power module of the communication base station, STD60N55-VB, as an efficient switching device, can improve the efficiency of power conversion, reduce losses, and ensure the efficient operation of the base station equipment.
**Network equipment power supply**: In the power modules of network equipment such as routers and switches, this MOSFET provides efficient power conversion and stability to ensure the reliable operation of the equipment.
1. **Power management**
**Switching power supply (SMPS)**: In the switching power supply (SMPS), STD60N55-VB is used for efficient power conversion and current control. Its low on-resistance and high current capability make it very suitable for use as a switching device in the DC-DC converter to ensure efficient and stable operation of the system.
**Battery charger**: This MOSFET can be used as an efficient power switching element in the battery charger circuit to control the battery charging and discharging process and provide stable current management.
2. **Consumer electronics**
**LED driver**: STD60N55-VB is widely used in LED drive circuits as an efficient power switch to ensure low power consumption and high brightness output of LED systems. Its low RDS(ON) characteristics effectively reduce heat loss and extend the service life of LEDs.
**TV power module**: In consumer electronic devices such as TVs, STD60N55-VB is used in power management modules to achieve stable power conversion and regulation to ensure stable operation of the equipment.
3. **Industrial applications**
**Motor control**: In motor drive circuits, STD60N55-VB can be used to control the current transmission of the motor, which is particularly suitable for industrial applications with high-power motors and high current requirements. Through its low on-resistance characteristics, it ensures that the motor drive system has low heat loss and high efficiency.
**Industrial power supply**: In industrial power modules, this MOSFET is used as a switching element to provide reliable power conversion to meet the needs of industrial equipment for high current and high efficiency.
4. **Automotive electronics**
**Automotive power system**: In automotive power management systems, STD60N55-VB is used as a switching element for power converters. Its high current capability and high efficiency ensure stable operation of the vehicle's electronic systems.
**Electric vehicle charger**: This MOSFET is suitable for the charging system of electric vehicles. As a power switching element, it can achieve efficient energy transmission and improve charging efficiency and speed.
5. **Communication equipment**
**Base station power module**: In the power module of the communication base station, STD60N55-VB, as an efficient switching device, can improve the efficiency of power conversion, reduce losses, and ensure the efficient operation of the base station equipment.
**Network equipment power supply**: In the power modules of network equipment such as routers and switches, this MOSFET provides efficient power conversion and stability to ensure the reliable operation of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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