中文
English
STD5NM50T4-VB Product details
Back to previous pageProduct introduction：
Product Introduction
The STD5NM50T4-VB is a high-performance single N-channel power MOSFET in a TO-252 package, designed for high-voltage applications, with a maximum drain-source voltage (VDS) of 650V and a maximum drain current (ID) of 7A. This device uses advanced SJ_Multi-EPI technology, has excellent switching characteristics and low on-resistance, with a maximum on-resistance (RDS(ON)) of 700mΩ @ VGS = 10V, which can provide stable performance in high-performance applications.
The threshold voltage (Vth) of this MOSFET is 3.5V, and the gate-source voltage (VGS) range is ±30V, supporting a variety of power management and load control applications. Its high withstand voltage, low on-resistance and good switching performance make it particularly suitable for use in high-efficiency power modules, especially in the fields of high-voltage power conversion and industrial control.
---
The STD5NM50T4-VB is a high-performance single N-channel power MOSFET in a TO-252 package, designed for high-voltage applications, with a maximum drain-source voltage (VDS) of 650V and a maximum drain current (ID) of 7A. This device uses advanced SJ_Multi-EPI technology, has excellent switching characteristics and low on-resistance, with a maximum on-resistance (RDS(ON)) of 700mΩ @ VGS = 10V, which can provide stable performance in high-performance applications.
The threshold voltage (Vth) of this MOSFET is 3.5V, and the gate-source voltage (VGS) range is ±30V, supporting a variety of power management and load control applications. Its high withstand voltage, low on-resistance and good switching performance make it particularly suitable for use in high-efficiency power modules, especially in the fields of high-voltage power conversion and industrial control.
---
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
| **Parameter** | **Value** | **Description** |
|-------------------------|------------------------------------------|-----------------------------------------------------|
| **Package** | TO-252 | Compact package, suitable for high-performance applications and low-footprint design|
| **Configuration** | Unipolar N-channel | Single-channel structure, widely used in switch control and power management|
| **Maximum drain-source voltage (VDS)** | 650V | High withstand voltage, suitable for high-voltage power supplies and converters|
| **Maximum gate-source voltage (VGS)** | ±30V | Supports a wide range of gate drive voltages, suitable for various control circuits|
| **Threshold voltage (Vth)** | 3.5V | Stable startup characteristics, suitable for medium and high voltage applications|
| **On-resistance (RDS(ON))** | 700mΩ @ VGS = 10V | Low on-resistance, reduced conduction loss, optimized efficiency|
| **Maximum drain current (ID)** | 7A | Suitable for medium power load applications, providing reliable current carrying capacity|
| **Technology** | SJ_Multi-EPI | Super junction multi-layer epitaxial technology, combining high withstand voltage and low loss|
---
| **Parameter** | **Value** | **Description** |
|-------------------------|------------------------------------------|-----------------------------------------------------|
| **Package** | TO-252 | Compact package, suitable for high-performance applications and low-footprint design|
| **Configuration** | Unipolar N-channel | Single-channel structure, widely used in switch control and power management|
| **Maximum drain-source voltage (VDS)** | 650V | High withstand voltage, suitable for high-voltage power supplies and converters|
| **Maximum gate-source voltage (VGS)** | ±30V | Supports a wide range of gate drive voltages, suitable for various control circuits|
| **Threshold voltage (Vth)** | 3.5V | Stable startup characteristics, suitable for medium and high voltage applications|
| **On-resistance (RDS(ON))** | 700mΩ @ VGS = 10V | Low on-resistance, reduced conduction loss, optimized efficiency|
| **Maximum drain current (ID)** | 7A | Suitable for medium power load applications, providing reliable current carrying capacity|
| **Technology** | SJ_Multi-EPI | Super junction multi-layer epitaxial technology, combining high withstand voltage and low loss|
---
Domain and module applications：
Application fields and module examples
1. **High-voltage power converter**
STD5NM50T4-VB is suitable for high-voltage power converters, such as DC-DC converters or AC-DC converters. In these applications, high-voltage tolerance is key, and this MOSFET provides reliable voltage conversion and load regulation capabilities to ensure efficient and stable operation of the system.
2. **Motor driver**
In industrial motor drive systems, this MOSFET is used as a switching element to control the current of the motor, supporting precise load control and power conversion. Its high voltage tolerance and low conduction loss make it suitable for efficient operation in motor drive applications.
3. **Industrial power management**
STD5NM50T4-VB can be used in industrial power management systems, such as industrial controllers and power management modules. Due to its high-voltage tolerance and low on-resistance, it can effectively reduce energy losses and improve system efficiency.
4. **Solar inverter**
In solar power generation systems, STD5NM50T4-VB can be used as a switching element in the inverter to convert DC power into AC power. Its high withstand voltage and low on-resistance characteristics make it suitable for high-efficiency solar systems to help improve power generation efficiency.
5. **Uninterruptible power supply (UPS) system**
In UPS systems, this MOSFET, as a key switching element, can provide efficient power conversion to ensure stable power supply to equipment, especially under high load conditions, which can reduce power loss and extend the service life of equipment.
6. **High-efficiency battery management system**
STD5NM50T4-VB is also suitable for battery management systems (BMS). Its high withstand voltage characteristics and low conduction loss make it very suitable for battery charge and discharge control and power regulation. It is widely used in electric vehicles (EV) and energy storage systems.
In summary, STD5NM50T4-VB is widely used in high-voltage power conversion, motor control, solar power generation systems and other fields, and can provide stable and reliable solutions for various power management and high-efficiency modules.
1. **High-voltage power converter**
STD5NM50T4-VB is suitable for high-voltage power converters, such as DC-DC converters or AC-DC converters. In these applications, high-voltage tolerance is key, and this MOSFET provides reliable voltage conversion and load regulation capabilities to ensure efficient and stable operation of the system.
2. **Motor driver**
In industrial motor drive systems, this MOSFET is used as a switching element to control the current of the motor, supporting precise load control and power conversion. Its high voltage tolerance and low conduction loss make it suitable for efficient operation in motor drive applications.
3. **Industrial power management**
STD5NM50T4-VB can be used in industrial power management systems, such as industrial controllers and power management modules. Due to its high-voltage tolerance and low on-resistance, it can effectively reduce energy losses and improve system efficiency.
4. **Solar inverter**
In solar power generation systems, STD5NM50T4-VB can be used as a switching element in the inverter to convert DC power into AC power. Its high withstand voltage and low on-resistance characteristics make it suitable for high-efficiency solar systems to help improve power generation efficiency.
5. **Uninterruptible power supply (UPS) system**
In UPS systems, this MOSFET, as a key switching element, can provide efficient power conversion to ensure stable power supply to equipment, especially under high load conditions, which can reduce power loss and extend the service life of equipment.
6. **High-efficiency battery management system**
STD5NM50T4-VB is also suitable for battery management systems (BMS). Its high withstand voltage characteristics and low conduction loss make it very suitable for battery charge and discharge control and power regulation. It is widely used in electric vehicles (EV) and energy storage systems.
In summary, STD5NM50T4-VB is widely used in high-voltage power conversion, motor control, solar power generation systems and other fields, and can provide stable and reliable solutions for various power management and high-efficiency modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
