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STD5NK40ZT4-VB Product details
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1. STD5NK40ZT4-VB Product Introduction
STD5NK40ZT4-VB is a high-voltage single N-channel MOSFET in TO252 package, designed for high-efficiency switching applications and power management systems. Its maximum drain-source voltage (VDS) can reach 650V, and the gate drive voltage (VGS) range is ±30V, supporting a wide control voltage range. The gate threshold voltage (Vth) is 3.5V, and the on-resistance (RDS(ON)) is only 1000mΩ at VGS=10V, providing low power consumption performance. The device has a maximum drain current (ID) of 5A, which is suitable for medium current and high voltage working environments. With the help of SJ_Multi-EPI technology, this MOSFET has significant advantages in high voltage and low power consumption, and is very suitable for various applications in the fields of industry, power supply and new energy.
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STD5NK40ZT4-VB is a high-voltage single N-channel MOSFET in TO252 package, designed for high-efficiency switching applications and power management systems. Its maximum drain-source voltage (VDS) can reach 650V, and the gate drive voltage (VGS) range is ±30V, supporting a wide control voltage range. The gate threshold voltage (Vth) is 3.5V, and the on-resistance (RDS(ON)) is only 1000mΩ at VGS=10V, providing low power consumption performance. The device has a maximum drain current (ID) of 5A, which is suitable for medium current and high voltage working environments. With the help of SJ_Multi-EPI technology, this MOSFET has significant advantages in high voltage and low power consumption, and is very suitable for various applications in the fields of industry, power supply and new energy.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. Detailed parameter description
| **Parameter** | **Value** | **Description** |
|-------------------------|-------------------------|----------------------------------------------|
| **Package** | TO252 | Surface mount package, suitable for space-constrained design scenarios. |
| **Configuration** | Single N-channel | Provides stable and efficient switching performance. |
| **Drain-source voltage (VDS)** | 650V | Suitable for high voltage operating environment. |
| **Gate-source voltage (VGS)** | ±30V | Supports a wider gate control voltage range and enhances driving flexibility. |
| **Gate threshold voltage (Vth)** | 3.5V | Ensures that the MOSFET is reliably turned on under appropriate conditions. |
| **On-resistance (RDS(ON))** | 1000mΩ @ VGS=10V | Provides low power consumption performance under high voltage conditions. |
| **Maximum drain current (ID)** | 5A | Meets medium current load requirements. |
| **Technology type** | SJ_Multi-EPI | Low power consumption and high efficiency through super junction multi-epitaxial technology. |
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| **Parameter** | **Value** | **Description** |
|-------------------------|-------------------------|----------------------------------------------|
| **Package** | TO252 | Surface mount package, suitable for space-constrained design scenarios. |
| **Configuration** | Single N-channel | Provides stable and efficient switching performance. |
| **Drain-source voltage (VDS)** | 650V | Suitable for high voltage operating environment. |
| **Gate-source voltage (VGS)** | ±30V | Supports a wider gate control voltage range and enhances driving flexibility. |
| **Gate threshold voltage (Vth)** | 3.5V | Ensures that the MOSFET is reliably turned on under appropriate conditions. |
| **On-resistance (RDS(ON))** | 1000mΩ @ VGS=10V | Provides low power consumption performance under high voltage conditions. |
| **Maximum drain current (ID)** | 5A | Meets medium current load requirements. |
| **Technology type** | SJ_Multi-EPI | Low power consumption and high efficiency through super junction multi-epitaxial technology. |
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Domain and module applications：
3. Applicable fields and module application examples
1. **Industrial power equipment**
- **Power converter**: STD5NK40ZT4-VB can be used for AC-DC and DC-DC converters in industrial environments. This device can achieve efficient power conversion under high voltage conditions while maintaining low losses, which is suitable for power modules in industrial power equipment.
- **Industrial motor control**: In high-voltage motor drives and industrial automation control, this MOSFET is used as a switching element to provide reliable switching performance and energy transmission efficiency.
2. **Power management system**
- **Switching power supply (SMPS)**: The 650V withstand voltage characteristics of STD5NK40ZT4-VB make it suitable for use as the main switching device in high-voltage power conversion modules, especially in power supply designs that require high reliability and low power consumption.
- **UPS system**: In uninterruptible power supplies (UPS), this MOSFET is used in battery management and high-voltage conversion parts to provide reliable power switching capabilities.
3. **Household appliances**
- **Microwave ovens, air conditioners, etc.**: Household appliances usually require high-voltage power conversion. The STD5NK40ZT4-VB can be used as a core switching element in the power module to support efficient energy conversion while having low heat dissipation.
4. **New energy field**
- **Solar inverter**: In the inverter of the photovoltaic system, the STD5NK40ZT4-VB is used for the conversion of high-voltage DC to AC. It has low losses and high power density, and is an ideal choice for realizing efficient solar power generation systems.
- **Wind power generation system**: Suitable for power conversion modules in wind power generators, it can provide reliable switching performance in high-voltage environments.
5. **Electric vehicle charging equipment**
- **On-board charger (OBC)**: In the on-board charger of electric vehicles, the STD5NK40ZT4-VB is used for the high-voltage charging module part, and its high voltage capability and low conduction loss improve charging efficiency.
- **DC fast charging equipment**: In DC fast charging stations, this MOSFET acts as a high-voltage switching element to ensure efficient and stable energy transmission.
The STD5NK40ZT4-VB has a wide range of application potentials in the fields of industry, power management and new energy through its high voltage support and low power consumption performance, and is an ideal choice for various medium and high voltage power applications.
1. **Industrial power equipment**
- **Power converter**: STD5NK40ZT4-VB can be used for AC-DC and DC-DC converters in industrial environments. This device can achieve efficient power conversion under high voltage conditions while maintaining low losses, which is suitable for power modules in industrial power equipment.
- **Industrial motor control**: In high-voltage motor drives and industrial automation control, this MOSFET is used as a switching element to provide reliable switching performance and energy transmission efficiency.
2. **Power management system**
- **Switching power supply (SMPS)**: The 650V withstand voltage characteristics of STD5NK40ZT4-VB make it suitable for use as the main switching device in high-voltage power conversion modules, especially in power supply designs that require high reliability and low power consumption.
- **UPS system**: In uninterruptible power supplies (UPS), this MOSFET is used in battery management and high-voltage conversion parts to provide reliable power switching capabilities.
3. **Household appliances**
- **Microwave ovens, air conditioners, etc.**: Household appliances usually require high-voltage power conversion. The STD5NK40ZT4-VB can be used as a core switching element in the power module to support efficient energy conversion while having low heat dissipation.
4. **New energy field**
- **Solar inverter**: In the inverter of the photovoltaic system, the STD5NK40ZT4-VB is used for the conversion of high-voltage DC to AC. It has low losses and high power density, and is an ideal choice for realizing efficient solar power generation systems.
- **Wind power generation system**: Suitable for power conversion modules in wind power generators, it can provide reliable switching performance in high-voltage environments.
5. **Electric vehicle charging equipment**
- **On-board charger (OBC)**: In the on-board charger of electric vehicles, the STD5NK40ZT4-VB is used for the high-voltage charging module part, and its high voltage capability and low conduction loss improve charging efficiency.
- **DC fast charging equipment**: In DC fast charging stations, this MOSFET acts as a high-voltage switching element to ensure efficient and stable energy transmission.
The STD5NK40ZT4-VB has a wide range of application potentials in the fields of industry, power management and new energy through its high voltage support and low power consumption performance, and is an ideal choice for various medium and high voltage power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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