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STD5NB30-TR-VB Product details
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Product Introduction
STD5NB30-TR-VB is a **single-channel N-channel MOSFET**, using **TO252 package**, with **650V** maximum drain-source voltage (VDS), supporting **±30V** gate-source voltage (VGS). Its **turn-on voltage (Vth)** is **3.5V**, and it has **700mΩ** on-resistance (RDS(ON)), which is suitable for medium to high voltage power electronics applications. This MOSFET adopts **SJ_Multi-EPI technology**, has low on-resistance and good switching performance, and is suitable for applications that require high voltage resistance and low on-resistance.
STD5NB30-TR-VB is a widely used component in high-voltage power electronic devices, especially in power management, power conversion, motor control and power systems. Its **7A** maximum drain current (ID) makes it very suitable for medium power power management and control systems.
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STD5NB30-TR-VB is a **single-channel N-channel MOSFET**, using **TO252 package**, with **650V** maximum drain-source voltage (VDS), supporting **±30V** gate-source voltage (VGS). Its **turn-on voltage (Vth)** is **3.5V**, and it has **700mΩ** on-resistance (RDS(ON)), which is suitable for medium to high voltage power electronics applications. This MOSFET adopts **SJ_Multi-EPI technology**, has low on-resistance and good switching performance, and is suitable for applications that require high voltage resistance and low on-resistance.
STD5NB30-TR-VB is a widely used component in high-voltage power electronic devices, especially in power management, power conversion, motor control and power systems. Its **7A** maximum drain current (ID) makes it very suitable for medium power power management and control systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Parameter Description
| **Parameter** | **Value** | **Description** |
|-------------------------|----------------------|----------------------------------------------|
| **Package** | TO252 | Compact package, suitable for applications with limited space and good heat dissipation. |
| **Configuration** | Single channel N-channel | Suitable for high voltage, high efficiency power conversion and switch control systems. |
| **Drain-source voltage (VDS)** | 650V | High voltage application, suitable for a variety of industrial control and power systems. |
| **Gate-source voltage (VGS)** | ±30V | Supports a wide range of gate voltage drive, compatible with various control circuits. |
| **Throw-on voltage (Vth)** | 3.5V | Higher turn-on voltage, suitable for high voltage environment applications. |
| **On-resistance (RDS(ON))** | 700mΩ (VGS=10V) | High on-resistance at high gate voltage, suitable for medium power applications. |
| **Drain current (ID)** | 7A | Suitable for medium current applications, supporting lower power control systems. |
| **Technology** | SJ_Multi-EPI | Multi-layer EPI structure, with good switching performance and stability. |
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| **Parameter** | **Value** | **Description** |
|-------------------------|----------------------|----------------------------------------------|
| **Package** | TO252 | Compact package, suitable for applications with limited space and good heat dissipation. |
| **Configuration** | Single channel N-channel | Suitable for high voltage, high efficiency power conversion and switch control systems. |
| **Drain-source voltage (VDS)** | 650V | High voltage application, suitable for a variety of industrial control and power systems. |
| **Gate-source voltage (VGS)** | ±30V | Supports a wide range of gate voltage drive, compatible with various control circuits. |
| **Throw-on voltage (Vth)** | 3.5V | Higher turn-on voltage, suitable for high voltage environment applications. |
| **On-resistance (RDS(ON))** | 700mΩ (VGS=10V) | High on-resistance at high gate voltage, suitable for medium power applications. |
| **Drain current (ID)** | 7A | Suitable for medium current applications, supporting lower power control systems. |
| **Technology** | SJ_Multi-EPI | Multi-layer EPI structure, with good switching performance and stability. |
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Domain and module applications：
Applications and module examples
1. **Power management system**
- STD5NB30-TR-VB is suitable for **power management systems**, especially in environments that require high voltage control, such as **power converters, inverters, and battery management systems**. Its **650V drain-source voltage** gives it good voltage resistance in high voltage input systems, and can maintain low energy loss during power conversion to ensure efficient operation of the system.
2. **Industrial motor drive control**
- In **industrial motor drive control**, STD5NB30-TR-VB can be used as a power switch to control the start, stop, and running status of the motor. It is especially suitable for **power tools, fan drives, and pump systems** that require **high voltage**. The **7A current carrying capacity** and **higher on-resistance** of the MOSFET make it suitable for medium power level motor control.
3. **Power converter**
- STD5NB30-TR-VB can also be used in **power converter**, such as **DC-AC inverter, AC-DC converter** and other devices. Due to its **650V withstand voltage** and **high switching performance**, it can effectively handle high voltage current in power conversion, reduce power loss and optimize overall energy efficiency. This makes it very suitable for **photovoltaic systems**, **wind power generation systems** or **power electronic equipment**.
4. **LED driver**
- In **LED driver** applications, STD5NB30-TR-VB can be used as a power switch to control the power supply to the LED. The **high voltage withstand characteristics** and **moderate on-resistance** of MOSFET enable it to work stably at higher currents and voltages, ensuring high efficiency and long life of the LED driver system.
5. **Battery Charger and Protection System**
- In a **battery charger** or **battery protection system**, the STD5NB30-TR-VB can be used as a current control switch to ensure current and voltage stability during charging and avoid overcharging or over-discharging. Its **650V withstand voltage capability** and **low on-resistance** make it a key role in battery management systems, which can effectively improve charging efficiency and reduce losses.
6. **Automotive Electronic Systems**
- The STD5NB30-TR-VB can be used in **automotive electronic systems**, such as power management modules, motor control systems, and power conversion devices for electric vehicles. In **electric vehicles (EVs)** and **hybrid electric vehicles (HEVs)**, this MOSFET can be used as a **power switch** to help manage and control the flow of power within the vehicle, ensuring efficiency and safety during energy conversion.
1. **Power management system**
- STD5NB30-TR-VB is suitable for **power management systems**, especially in environments that require high voltage control, such as **power converters, inverters, and battery management systems**. Its **650V drain-source voltage** gives it good voltage resistance in high voltage input systems, and can maintain low energy loss during power conversion to ensure efficient operation of the system.
2. **Industrial motor drive control**
- In **industrial motor drive control**, STD5NB30-TR-VB can be used as a power switch to control the start, stop, and running status of the motor. It is especially suitable for **power tools, fan drives, and pump systems** that require **high voltage**. The **7A current carrying capacity** and **higher on-resistance** of the MOSFET make it suitable for medium power level motor control.
3. **Power converter**
- STD5NB30-TR-VB can also be used in **power converter**, such as **DC-AC inverter, AC-DC converter** and other devices. Due to its **650V withstand voltage** and **high switching performance**, it can effectively handle high voltage current in power conversion, reduce power loss and optimize overall energy efficiency. This makes it very suitable for **photovoltaic systems**, **wind power generation systems** or **power electronic equipment**.
4. **LED driver**
- In **LED driver** applications, STD5NB30-TR-VB can be used as a power switch to control the power supply to the LED. The **high voltage withstand characteristics** and **moderate on-resistance** of MOSFET enable it to work stably at higher currents and voltages, ensuring high efficiency and long life of the LED driver system.
5. **Battery Charger and Protection System**
- In a **battery charger** or **battery protection system**, the STD5NB30-TR-VB can be used as a current control switch to ensure current and voltage stability during charging and avoid overcharging or over-discharging. Its **650V withstand voltage capability** and **low on-resistance** make it a key role in battery management systems, which can effectively improve charging efficiency and reduce losses.
6. **Automotive Electronic Systems**
- The STD5NB30-TR-VB can be used in **automotive electronic systems**, such as power management modules, motor control systems, and power conversion devices for electric vehicles. In **electric vehicles (EVs)** and **hybrid electric vehicles (HEVs)**, this MOSFET can be used as a **power switch** to help manage and control the flow of power within the vehicle, ensuring efficiency and safety during energy conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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