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STD5NB20T4-VB Product details
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STD5NB20T4-VB Product Introduction
STD5NB20T4-VB is a high-performance N-type MOSFET in TO252 package, designed for medium power applications. The maximum drain-source voltage (VDS) of this MOSFET is 200V, the gate-source voltage (VGS) is ±20V, and it has a low on-resistance (RDS(ON)) of 245mΩ (@VGS=10V). Its maximum drain current (ID) is 10A, which is suitable for applications with medium power requirements. STD5NB20T4-VB uses Trench technology, with excellent switching performance, low loss characteristics and outstanding thermal management capabilities. It is widely used in power conversion, power amplification and other electrical systems requiring high efficiency and high reliability.
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STD5NB20T4-VB is a high-performance N-type MOSFET in TO252 package, designed for medium power applications. The maximum drain-source voltage (VDS) of this MOSFET is 200V, the gate-source voltage (VGS) is ±20V, and it has a low on-resistance (RDS(ON)) of 245mΩ (@VGS=10V). Its maximum drain current (ID) is 10A, which is suitable for applications with medium power requirements. STD5NB20T4-VB uses Trench technology, with excellent switching performance, low loss characteristics and outstanding thermal management capabilities. It is widely used in power conversion, power amplification and other electrical systems requiring high efficiency and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | 245mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
STD5NB20T4-VB parameter description
| **Parameter** | **Description** |
|---------------------------|--------------------------------------------------------------------|
| **Package type** | TO252 |
| **Configuration** | Single channel N-type MOSFET |
| **Drain-source voltage (VDS)** | 200V |
| **Gate-source voltage (VGS)** | ±20V |
| **Turn-on threshold voltage (Vth)** | 3V |
| **On-resistance (RDS(ON))** | 245mΩ (@VGS=10V) |
| **Maximum drain current (ID)** | 10A |
| **Technology** | Trench technology|
| **Maximum junction temperature** | 150°C |
| **Package characteristics** | TO252 package, suitable for medium power, high reliability applications|
| **Switching Performance** | Excellent switching characteristics for low power and medium power applications with low conduction losses and high efficiency |
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| **Parameter** | **Description** |
|---------------------------|--------------------------------------------------------------------|
| **Package type** | TO252 |
| **Configuration** | Single channel N-type MOSFET |
| **Drain-source voltage (VDS)** | 200V |
| **Gate-source voltage (VGS)** | ±20V |
| **Turn-on threshold voltage (Vth)** | 3V |
| **On-resistance (RDS(ON))** | 245mΩ (@VGS=10V) |
| **Maximum drain current (ID)** | 10A |
| **Technology** | Trench technology|
| **Maximum junction temperature** | 150°C |
| **Package characteristics** | TO252 package, suitable for medium power, high reliability applications|
| **Switching Performance** | Excellent switching characteristics for low power and medium power applications with low conduction losses and high efficiency |
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Domain and module applications：
Applications and module examples
1. **Power conversion and power adapter**
STD5NB20T4-VB is widely used in power conversion and power adapter. Due to its maximum drain-source voltage of 200V and low on-resistance, it can provide high-efficiency switching functions in AC-DC converters and DC-DC converters. It can improve the efficiency of power adapters, reduce heat generation, extend the life of the equipment, and ensure stable power output.
2. **Power amplifier and audio amplifier**
This MOSFET is suitable for applications such as power amplifiers and audio amplifiers, especially in situations where high power and low distortion output are required. The low on-resistance and good switching performance of STD5NB20T4-VB enable it to effectively amplify signals, maintain efficient power transmission, ensure excellent sound quality of the equipment and reduce power loss.
3. **LED drive circuit**
In the LED drive circuit, STD5NB20T4-VB can be used to control and regulate current. Due to its ability to withstand higher currents and lower resistance characteristics, it is very suitable for driving high currents in LED lighting systems, improving the energy efficiency of the entire lighting system through efficient power management.
4. **Automotive Electronic Systems**
In automotive electronic systems, the STD5NB20T4-VB is mainly used in battery management systems (BMS) and motor drive modules. Its high current carrying capacity and low on-resistance characteristics enable it to provide stable power control, which helps to improve the battery efficiency of the vehicle, extend battery life, and optimize the performance of the power system.
5. **Industrial Automation and Control**
In industrial automation systems, the STD5NB20T4-VB can be used in motor control, inverters, and other power management applications. Its low on-resistance can reduce power loss and help improve motor drive efficiency while maintaining system temperature control and reliability, making it suitable for industrial control systems with high efficiency requirements.
6. **Communication equipment**
In communication equipment, STD5NB20T4-VB can be used in RF power amplifiers, modems and other modules that require high-efficiency power management. It can stably and efficiently control the flow of current, improve the stability and reliability of communication equipment, and is especially suitable for communication equipment and base station equipment that run for a long time.
7. **Battery management and energy storage system**
Due to its 10A current handling capability and low on-resistance, STD5NB20T4-VB is also suitable for battery management systems (BMS) and energy storage systems. It can effectively manage the battery's charging and discharging process, optimize energy transfer efficiency, and ensure that the battery system operates in an efficient and safe environment.
As a high-efficiency N-type MOSFET, STD5NB20T4-VB is suitable for various medium-power and high-current application scenarios, including power management, power amplifiers, LED drivers, industrial automation and other fields. Its low on-resistance and high reliability make it an indispensable core component in modern electrical systems.
1. **Power conversion and power adapter**
STD5NB20T4-VB is widely used in power conversion and power adapter. Due to its maximum drain-source voltage of 200V and low on-resistance, it can provide high-efficiency switching functions in AC-DC converters and DC-DC converters. It can improve the efficiency of power adapters, reduce heat generation, extend the life of the equipment, and ensure stable power output.
2. **Power amplifier and audio amplifier**
This MOSFET is suitable for applications such as power amplifiers and audio amplifiers, especially in situations where high power and low distortion output are required. The low on-resistance and good switching performance of STD5NB20T4-VB enable it to effectively amplify signals, maintain efficient power transmission, ensure excellent sound quality of the equipment and reduce power loss.
3. **LED drive circuit**
In the LED drive circuit, STD5NB20T4-VB can be used to control and regulate current. Due to its ability to withstand higher currents and lower resistance characteristics, it is very suitable for driving high currents in LED lighting systems, improving the energy efficiency of the entire lighting system through efficient power management.
4. **Automotive Electronic Systems**
In automotive electronic systems, the STD5NB20T4-VB is mainly used in battery management systems (BMS) and motor drive modules. Its high current carrying capacity and low on-resistance characteristics enable it to provide stable power control, which helps to improve the battery efficiency of the vehicle, extend battery life, and optimize the performance of the power system.
5. **Industrial Automation and Control**
In industrial automation systems, the STD5NB20T4-VB can be used in motor control, inverters, and other power management applications. Its low on-resistance can reduce power loss and help improve motor drive efficiency while maintaining system temperature control and reliability, making it suitable for industrial control systems with high efficiency requirements.
6. **Communication equipment**
In communication equipment, STD5NB20T4-VB can be used in RF power amplifiers, modems and other modules that require high-efficiency power management. It can stably and efficiently control the flow of current, improve the stability and reliability of communication equipment, and is especially suitable for communication equipment and base station equipment that run for a long time.
7. **Battery management and energy storage system**
Due to its 10A current handling capability and low on-resistance, STD5NB20T4-VB is also suitable for battery management systems (BMS) and energy storage systems. It can effectively manage the battery's charging and discharging process, optimize energy transfer efficiency, and ensure that the battery system operates in an efficient and safe environment.
As a high-efficiency N-type MOSFET, STD5NB20T4-VB is suitable for various medium-power and high-current application scenarios, including power management, power amplifiers, LED drivers, industrial automation and other fields. Its low on-resistance and high reliability make it an indispensable core component in modern electrical systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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