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STD5N62K3-VB Product details
Back to previous pageProduct introduction：
1. STD5N62K3-VB Product Introduction
STD5N62K3-VB is a single N-channel MOSFET in TO252 package, designed for high-efficiency switching applications. Its maximum drain-source voltage (VDS) is 650V, which can withstand the working requirements in high-voltage environments. The gate-source voltage (VGS) of this MOSFET can be ±30V, and the gate threshold voltage (Vth) is 3.5V, with good switching performance and conduction characteristics. At VGS=10V, its on-resistance (RDS(ON)) is 1000mΩ, providing superior performance with low conduction loss for high current applications. The maximum drain current (ID) is 5A, which is suitable for power conversion systems that require high voltage carrying capacity and medium current drive. Using SJ_Multi-EPI technology, STD5N62K3-VB provides good switching efficiency and stability, and is widely used in power management, power tools and industrial control.
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STD5N62K3-VB is a single N-channel MOSFET in TO252 package, designed for high-efficiency switching applications. Its maximum drain-source voltage (VDS) is 650V, which can withstand the working requirements in high-voltage environments. The gate-source voltage (VGS) of this MOSFET can be ±30V, and the gate threshold voltage (Vth) is 3.5V, with good switching performance and conduction characteristics. At VGS=10V, its on-resistance (RDS(ON)) is 1000mΩ, providing superior performance with low conduction loss for high current applications. The maximum drain current (ID) is 5A, which is suitable for power conversion systems that require high voltage carrying capacity and medium current drive. Using SJ_Multi-EPI technology, STD5N62K3-VB provides good switching efficiency and stability, and is widely used in power management, power tools and industrial control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. Detailed parameter description
| **Parameter** | **Value** | **Description** |
|-------------------------|-------------------------|----------------------------------------------|
| **Package** | TO252 | Compact package, suitable for high voltage applications and high power density. |
| **Configuration** | Single N-channel | Provides efficient switching performance and is suitable for a variety of power conversion systems. |
| **Drain-source voltage (VDS)** | 650V | Suitable for power applications in the medium and high voltage range, and can withstand 650V. |
| **Gate-source voltage (VGS)** | ±30V | Suitable for a wide range of gate-source drive voltages. |
| **Gate threshold voltage (Vth)** | 3.5V | Reasonable threshold voltage to ensure efficient conduction. |
| **On-resistance (RDS(ON))** | 1000mΩ @ VGS=10V | On-resistance at VGS=10V, suitable for high-voltage switching applications. |
| **Maximum drain current (ID)** | 5A | Supports a maximum drain current of 5A, suitable for medium current requirements. |
| **Technology type** | SJ_Multi-EPI | SJ_Multi-EPI technology helps reduce on-resistance and improve switching efficiency. |
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| **Parameter** | **Value** | **Description** |
|-------------------------|-------------------------|----------------------------------------------|
| **Package** | TO252 | Compact package, suitable for high voltage applications and high power density. |
| **Configuration** | Single N-channel | Provides efficient switching performance and is suitable for a variety of power conversion systems. |
| **Drain-source voltage (VDS)** | 650V | Suitable for power applications in the medium and high voltage range, and can withstand 650V. |
| **Gate-source voltage (VGS)** | ±30V | Suitable for a wide range of gate-source drive voltages. |
| **Gate threshold voltage (Vth)** | 3.5V | Reasonable threshold voltage to ensure efficient conduction. |
| **On-resistance (RDS(ON))** | 1000mΩ @ VGS=10V | On-resistance at VGS=10V, suitable for high-voltage switching applications. |
| **Maximum drain current (ID)** | 5A | Supports a maximum drain current of 5A, suitable for medium current requirements. |
| **Technology type** | SJ_Multi-EPI | SJ_Multi-EPI technology helps reduce on-resistance and improve switching efficiency. |
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Domain and module applications：
III. Applicable fields and examples of module applications
1. **Power management**
- **Switching power supply (SMPS)**: STD5N62K3-VB can work stably in high voltage environments and is suitable for high voltage power switches in switching power supplies (SMPS). Its low on-resistance and stable switching characteristics can improve conversion efficiency and reduce power loss.
- **AC-DC power adapter**: This MOSFET can be used in AC-DC power adapters, especially in scenarios that require high voltage protection and high current handling capabilities, to provide efficient and stable power conversion.
2. **Power tools and home appliances**
- **Power tool power management**: In power tools, STD5N62K3-VB can be used as a power switch in the power conversion module to provide stable current support while maintaining low loss to meet the power needs of high-power power tools.
- **Home appliance power module**: In home appliances, such as microwave ovens, refrigerators, etc., STD5N62K3-VB can be used for power switches in power modules to meet the high efficiency and high voltage working requirements of home appliances.
3. **Electric vehicles and new energy**
- **Electric vehicle battery management system (BMS)**: STD5N62K3-VB can be used in the battery management system of electric vehicles, especially in the charging control and battery voltage protection circuits. It can withstand voltages up to 650V, effectively ensuring stable charging and discharging of the battery.
- **Solar inverter**: This MOSFET is also suitable for solar inverters for efficiently converting DC power (DC) to AC power (AC). Its high voltage carrying capacity and low conduction loss characteristics make it an ideal choice for inverter switching circuits.
4. **Industrial Control and Motor Drive**
- **Industrial Motor Drive Control**: In industrial motor drive control systems, STD5N62K3-VB, as a switching element, can provide stable current output and is suitable for use in control links such as motor starting and speed regulation.
- **Industrial Power Control**: In power modules for industrial equipment, STD5N62K3-VB is suitable for applications that require high voltage carrying and medium current handling, helping to achieve high-efficiency conversion of power management systems.
The high voltage carrying capacity, low on-resistance and efficient switching characteristics of STD5N62K3-VB make it widely used in power management, power tools, solar inverters, electric vehicle battery management systems and other fields, with good market prospects and application value.
1. **Power management**
- **Switching power supply (SMPS)**: STD5N62K3-VB can work stably in high voltage environments and is suitable for high voltage power switches in switching power supplies (SMPS). Its low on-resistance and stable switching characteristics can improve conversion efficiency and reduce power loss.
- **AC-DC power adapter**: This MOSFET can be used in AC-DC power adapters, especially in scenarios that require high voltage protection and high current handling capabilities, to provide efficient and stable power conversion.
2. **Power tools and home appliances**
- **Power tool power management**: In power tools, STD5N62K3-VB can be used as a power switch in the power conversion module to provide stable current support while maintaining low loss to meet the power needs of high-power power tools.
- **Home appliance power module**: In home appliances, such as microwave ovens, refrigerators, etc., STD5N62K3-VB can be used for power switches in power modules to meet the high efficiency and high voltage working requirements of home appliances.
3. **Electric vehicles and new energy**
- **Electric vehicle battery management system (BMS)**: STD5N62K3-VB can be used in the battery management system of electric vehicles, especially in the charging control and battery voltage protection circuits. It can withstand voltages up to 650V, effectively ensuring stable charging and discharging of the battery.
- **Solar inverter**: This MOSFET is also suitable for solar inverters for efficiently converting DC power (DC) to AC power (AC). Its high voltage carrying capacity and low conduction loss characteristics make it an ideal choice for inverter switching circuits.
4. **Industrial Control and Motor Drive**
- **Industrial Motor Drive Control**: In industrial motor drive control systems, STD5N62K3-VB, as a switching element, can provide stable current output and is suitable for use in control links such as motor starting and speed regulation.
- **Industrial Power Control**: In power modules for industrial equipment, STD5N62K3-VB is suitable for applications that require high voltage carrying and medium current handling, helping to achieve high-efficiency conversion of power management systems.
The high voltage carrying capacity, low on-resistance and efficient switching characteristics of STD5N62K3-VB make it widely used in power management, power tools, solar inverters, electric vehicle battery management systems and other fields, with good market prospects and application value.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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