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STD4NK80Z-VB Product details
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Product Introduction: STD4NK80Z-VB
STD4NK80Z-VB is a single N-channel power MOSFET in TO252 package with 800V drain-source voltage (VDS) and ±30V gate voltage (VGS). This MOSFET uses SJ_Multi-EPI technology and has excellent high-voltage performance and stable switching characteristics. The maximum drain current (ID) is 2A and the on-resistance (RDS(ON)) is 2600mΩ @VGS = 10V. This product is very suitable for applications that require high voltage tolerance and low power consumption, such as switching power supplies, inverters, industrial power management and other high-voltage power applications.
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STD4NK80Z-VB is a single N-channel power MOSFET in TO252 package with 800V drain-source voltage (VDS) and ±30V gate voltage (VGS). This MOSFET uses SJ_Multi-EPI technology and has excellent high-voltage performance and stable switching characteristics. The maximum drain current (ID) is 2A and the on-resistance (RDS(ON)) is 2600mΩ @VGS = 10V. This product is very suitable for applications that require high voltage tolerance and low power consumption, such as switching power supplies, inverters, industrial power management and other high-voltage power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | 2600mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
| Parameter | Value | Description|
|------------------|--------------------------------|-------------------------------------------|
| **Package** | TO252 | Small TO252 package, suitable for high power density applications. |
| **Configuration** | Single N-channel | Suitable for low-side switch, providing good current conduction performance. |
| **Drain-source voltage (VDS)** | 800V | Maximum drain-source voltage is 800V, suitable for high voltage environment applications. |
| **Gate voltage (VGS)** | ±30V | Acceptable gate voltage range to ensure safe operation. |
| **Threshold voltage (Vth)** | 3.5V | Minimum gate voltage required for MOSFET to turn on. |
| **On-resistance (RDS(ON))** | 2600mΩ@VGS=10V | Relatively high on-resistance, suitable for low and medium power applications. |
| **Drain Current (ID)** | 2A | Maximum drain current is 2A, suitable for low and medium power applications. |
| **Technology** | SJ_Multi-EPI | High voltage performance and switching speed are optimized using SJ_Multi-EPI technology. |
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| Parameter | Value | Description|
|------------------|--------------------------------|-------------------------------------------|
| **Package** | TO252 | Small TO252 package, suitable for high power density applications. |
| **Configuration** | Single N-channel | Suitable for low-side switch, providing good current conduction performance. |
| **Drain-source voltage (VDS)** | 800V | Maximum drain-source voltage is 800V, suitable for high voltage environment applications. |
| **Gate voltage (VGS)** | ±30V | Acceptable gate voltage range to ensure safe operation. |
| **Threshold voltage (Vth)** | 3.5V | Minimum gate voltage required for MOSFET to turn on. |
| **On-resistance (RDS(ON))** | 2600mΩ@VGS=10V | Relatively high on-resistance, suitable for low and medium power applications. |
| **Drain Current (ID)** | 2A | Maximum drain current is 2A, suitable for low and medium power applications. |
| **Technology** | SJ_Multi-EPI | High voltage performance and switching speed are optimized using SJ_Multi-EPI technology. |
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Domain and module applications：
Application fields and module examples
1. **Switching Power Supply (SMPS)**
The high drain-source voltage (800V) and high on-resistance of STD4NK80Z-VB make it suitable for high-voltage switching power supply (SMPS). In such applications, the MOSFET can be used in power modules such as AC-DC conversion and DC-DC conversion, with stable switching performance and low power loss.
2. **Inverter**
In inverters, especially in solar and wind power systems, STD4NK80Z-VB can effectively convert DC power to AC power. Its high withstand voltage characteristics and low on-resistance make it suitable for high-voltage inverter applications and provide efficient energy utilization during the conversion process.
3. **Industrial Power Management**
In industrial power management systems, STD4NK80Z-VB can be used in battery management, power distribution and conversion power. Its high withstand voltage performance makes it very suitable for working in high voltage environments and can effectively improve the efficiency of power management systems.
4. **High-voltage power supply system**
In high-voltage power supply systems (such as data centers, industrial equipment power supplies), STD4NK80Z-VB MOSFET can be used for current regulation and voltage conversion to meet the needs of high voltage and high power applications. It can withstand higher voltages and work stably to ensure the reliability and stability of power supply.
5. **Consumer electronics**
In some consumer electronics products with high voltage applications, STD4NK80Z-VB can also provide superior performance. For example, in power modules for power tools and home appliances, it can withstand high voltages and provide stable current transmission.
6. **Electric vehicle charger**
In electric vehicle chargers, STD4NK80Z-VB can be used for high-voltage power conversion, especially during high-voltage battery charging. It can effectively manage voltage and current, improve charging efficiency and reduce energy loss.
In summary, the STD4NK80Z-VB MOSFET is suitable for switching power supplies, inverters, power management systems, high-voltage power supplies, consumer electronics, and electric vehicle chargers. With its high voltage resistance, stable switching performance, and medium power handling capability, it is widely used in various high-voltage, high-efficiency power conversion systems.
1. **Switching Power Supply (SMPS)**
The high drain-source voltage (800V) and high on-resistance of STD4NK80Z-VB make it suitable for high-voltage switching power supply (SMPS). In such applications, the MOSFET can be used in power modules such as AC-DC conversion and DC-DC conversion, with stable switching performance and low power loss.
2. **Inverter**
In inverters, especially in solar and wind power systems, STD4NK80Z-VB can effectively convert DC power to AC power. Its high withstand voltage characteristics and low on-resistance make it suitable for high-voltage inverter applications and provide efficient energy utilization during the conversion process.
3. **Industrial Power Management**
In industrial power management systems, STD4NK80Z-VB can be used in battery management, power distribution and conversion power. Its high withstand voltage performance makes it very suitable for working in high voltage environments and can effectively improve the efficiency of power management systems.
4. **High-voltage power supply system**
In high-voltage power supply systems (such as data centers, industrial equipment power supplies), STD4NK80Z-VB MOSFET can be used for current regulation and voltage conversion to meet the needs of high voltage and high power applications. It can withstand higher voltages and work stably to ensure the reliability and stability of power supply.
5. **Consumer electronics**
In some consumer electronics products with high voltage applications, STD4NK80Z-VB can also provide superior performance. For example, in power modules for power tools and home appliances, it can withstand high voltages and provide stable current transmission.
6. **Electric vehicle charger**
In electric vehicle chargers, STD4NK80Z-VB can be used for high-voltage power conversion, especially during high-voltage battery charging. It can effectively manage voltage and current, improve charging efficiency and reduce energy loss.
In summary, the STD4NK80Z-VB MOSFET is suitable for switching power supplies, inverters, power management systems, high-voltage power supplies, consumer electronics, and electric vehicle chargers. With its high voltage resistance, stable switching performance, and medium power handling capability, it is widely used in various high-voltage, high-efficiency power conversion systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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