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STD4N80K5-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
**STD4N80K5-VB** is a single N-channel power MOSFET in TO252 package with a maximum drain-source voltage of 800V and a maximum drain current of 2A. This product uses SJ_Multi-EPI technology, has low on-resistance and good current carrying capacity, and is suitable for high-voltage applications. Its threshold voltage is 3.5V, and it can work normally under a lower driving voltage. The low RDS(ON) characteristic of STD4N80K5-VB enables it to have lower power loss under high current load conditions, and is widely used in electronic equipment that requires high-voltage switch control.
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**STD4N80K5-VB** is a single N-channel power MOSFET in TO252 package with a maximum drain-source voltage of 800V and a maximum drain current of 2A. This product uses SJ_Multi-EPI technology, has low on-resistance and good current carrying capacity, and is suitable for high-voltage applications. Its threshold voltage is 3.5V, and it can work normally under a lower driving voltage. The low RDS(ON) characteristic of STD4N80K5-VB enables it to have lower power loss under high current load conditions, and is widely used in electronic equipment that requires high-voltage switch control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | 2600mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. Detailed parameter description
| **Parameter** | **Value** | **Description** |
|----------------------|--------------------------------------|------------------------------------------------------------|
| **Package** | TO252 | TO252 package, suitable for surface mounting, with good heat dissipation and electrical performance|
| **Configuration** | Single N-channel | Single N-channel MOSFET configuration, suitable for high-voltage power switching and power management applications|
| **VDS** | 800V | Maximum drain-source voltage 800V, suitable for high-voltage circuit applications|
| **VGS** | ±30V | Supports gate-source voltage of ±30V, adapting to various power driving conditions|
| **Vth** | 3.5V | Threshold voltage is 3.5V, suitable for low-voltage startup and precise control|
| **RDS(ON)** | 2600mΩ@VGS=10V | Low on-resistance, providing lower power loss and optimizing switching efficiency|
| **ID** | 2A | Maximum drain current of 2A, suitable for low current control and high voltage switching applications|
| **Technology** | SJ_Multi-EPI | Using SJ_Multi-EPI technology, the current carrying capacity and conduction characteristics of the device are optimized|
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| **Parameter** | **Value** | **Description** |
|----------------------|--------------------------------------|------------------------------------------------------------|
| **Package** | TO252 | TO252 package, suitable for surface mounting, with good heat dissipation and electrical performance|
| **Configuration** | Single N-channel | Single N-channel MOSFET configuration, suitable for high-voltage power switching and power management applications|
| **VDS** | 800V | Maximum drain-source voltage 800V, suitable for high-voltage circuit applications|
| **VGS** | ±30V | Supports gate-source voltage of ±30V, adapting to various power driving conditions|
| **Vth** | 3.5V | Threshold voltage is 3.5V, suitable for low-voltage startup and precise control|
| **RDS(ON)** | 2600mΩ@VGS=10V | Low on-resistance, providing lower power loss and optimizing switching efficiency|
| **ID** | 2A | Maximum drain current of 2A, suitable for low current control and high voltage switching applications|
| **Technology** | SJ_Multi-EPI | Using SJ_Multi-EPI technology, the current carrying capacity and conduction characteristics of the device are optimized|
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Domain and module applications：
3. Application fields and module examples
1. **High-voltage power switch**
**AC-DC converter**: STD4N80K5-VB is suitable for AC-DC power converters. Its high withstand voltage of 800V enables it to handle higher input voltages and perform power conversion efficiently. The low RDS(ON) characteristics of the MOSFET reduce power losses and ensure efficient power management. This MOSFET is particularly suitable for high-voltage power conversion modules in home appliances, industrial power supplies and charging systems.
**Power supply system**: In the power supply system, STD4N80K5-VB can be used to switch high-voltage currents. Its low on-resistance enables the device to operate efficiently under high-voltage environments, making it suitable for applications such as power converters and charging stations.
2. **Industrial control and drive circuits**
**Motor drive circuit**: STD4N80K5-VB can be used for switching operations in motor control systems, especially for industrial drive systems. Its high withstand voltage and stable conduction characteristics can effectively support the efficient drive of the motor and control the stable output of the current, which is suitable for the drive control module in the factory automation system.
**VFD**: In the inverter application, this MOSFET can efficiently control the current conversion and provide precise voltage control. It is widely used in industrial equipment that needs to accurately adjust the motor speed.
3. **Battery Management System (BMS)**
**High-voltage Battery Management**: The high withstand voltage capability of STD4N80K5-VB makes it suitable for high-voltage battery switch control in the battery management system. It can provide stable current control during the battery charging and discharging process to ensure that the battery operates at a safe voltage. It is suitable for electric vehicles, high-voltage energy storage systems and other fields.
**Electric Vehicles (EV)**: In the BMS of electric vehicles, this MOSFET is used to control the charging and discharging process of high-voltage batteries to ensure efficient and safe operation of the batteries.
4. **High-efficiency lighting and LED driving**
**LED power management**: STD4N80K5-VB is widely used in LED driving power supplies. Its low on-resistance and high withstand voltage enable it to handle higher voltage power supplies and efficiently provide stable current to drive LED modules. Application scenarios include LED lighting, signal lights and other fields.
**Smart lighting system**: This MOSFET is suitable for smart lighting systems. It can efficiently manage current, control the brightness of LEDs, and optimize power consumption. It is widely used in commercial lighting and home lighting.
5. **Consumer electronics and electrical equipment**
**TV and audio equipment power management**: In consumer electronics, STD4N80K5-VB can be used in power management systems for TVs and audio equipment. Its high withstand voltage and high current carrying capacity enable these devices to work efficiently and stably.
**Household Appliance Power Control**: This MOSFET is suitable for household appliances, such as microwave ovens, electric water heaters, air conditioners, etc., and can provide reliable current control and efficient power management in the power systems of these devices.
In summary, STD4N80K5-VB is widely used in high-voltage power switches, battery management systems, industrial drives, electric vehicles, LED drives, power conversion and other fields. Its high withstand voltage and low RDS(ON) characteristics make it perform well in various high-power and high-voltage applications, and can provide efficient and reliable power management solutions.
1. **High-voltage power switch**
**AC-DC converter**: STD4N80K5-VB is suitable for AC-DC power converters. Its high withstand voltage of 800V enables it to handle higher input voltages and perform power conversion efficiently. The low RDS(ON) characteristics of the MOSFET reduce power losses and ensure efficient power management. This MOSFET is particularly suitable for high-voltage power conversion modules in home appliances, industrial power supplies and charging systems.
**Power supply system**: In the power supply system, STD4N80K5-VB can be used to switch high-voltage currents. Its low on-resistance enables the device to operate efficiently under high-voltage environments, making it suitable for applications such as power converters and charging stations.
2. **Industrial control and drive circuits**
**Motor drive circuit**: STD4N80K5-VB can be used for switching operations in motor control systems, especially for industrial drive systems. Its high withstand voltage and stable conduction characteristics can effectively support the efficient drive of the motor and control the stable output of the current, which is suitable for the drive control module in the factory automation system.
**VFD**: In the inverter application, this MOSFET can efficiently control the current conversion and provide precise voltage control. It is widely used in industrial equipment that needs to accurately adjust the motor speed.
3. **Battery Management System (BMS)**
**High-voltage Battery Management**: The high withstand voltage capability of STD4N80K5-VB makes it suitable for high-voltage battery switch control in the battery management system. It can provide stable current control during the battery charging and discharging process to ensure that the battery operates at a safe voltage. It is suitable for electric vehicles, high-voltage energy storage systems and other fields.
**Electric Vehicles (EV)**: In the BMS of electric vehicles, this MOSFET is used to control the charging and discharging process of high-voltage batteries to ensure efficient and safe operation of the batteries.
4. **High-efficiency lighting and LED driving**
**LED power management**: STD4N80K5-VB is widely used in LED driving power supplies. Its low on-resistance and high withstand voltage enable it to handle higher voltage power supplies and efficiently provide stable current to drive LED modules. Application scenarios include LED lighting, signal lights and other fields.
**Smart lighting system**: This MOSFET is suitable for smart lighting systems. It can efficiently manage current, control the brightness of LEDs, and optimize power consumption. It is widely used in commercial lighting and home lighting.
5. **Consumer electronics and electrical equipment**
**TV and audio equipment power management**: In consumer electronics, STD4N80K5-VB can be used in power management systems for TVs and audio equipment. Its high withstand voltage and high current carrying capacity enable these devices to work efficiently and stably.
**Household Appliance Power Control**: This MOSFET is suitable for household appliances, such as microwave ovens, electric water heaters, air conditioners, etc., and can provide reliable current control and efficient power management in the power systems of these devices.
In summary, STD4N80K5-VB is widely used in high-voltage power switches, battery management systems, industrial drives, electric vehicles, LED drives, power conversion and other fields. Its high withstand voltage and low RDS(ON) characteristics make it perform well in various high-power and high-voltage applications, and can provide efficient and reliable power management solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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