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STD4N62K3-VB Product details
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Product Introduction: STD4N62K3-VB
STD4N62K3-VB is a single N-channel power MOSFET in TO252 package with a drain-source voltage (VDS) of 650V and a gate voltage (VGS) of ±30V. This product adopts SJ_Multi-EPI technology, has good high-voltage tolerance and low on-resistance (RDS(ON) = 1000mΩ @VGS = 10V), and a maximum drain current (ID) of 5A. This MOSFET is suitable for high-voltage switching power supplies, inverters and other applications requiring high voltage tolerance. STD4N62K3-VB provides stable switching performance and high efficiency, and is widely used in industrial, energy and consumer electronics.
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STD4N62K3-VB is a single N-channel power MOSFET in TO252 package with a drain-source voltage (VDS) of 650V and a gate voltage (VGS) of ±30V. This product adopts SJ_Multi-EPI technology, has good high-voltage tolerance and low on-resistance (RDS(ON) = 1000mΩ @VGS = 10V), and a maximum drain current (ID) of 5A. This MOSFET is suitable for high-voltage switching power supplies, inverters and other applications requiring high voltage tolerance. STD4N62K3-VB provides stable switching performance and high efficiency, and is widely used in industrial, energy and consumer electronics.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
| Parameter | Value | Description|
|------------------|--------------------------------|-------------------------------------------|
| **Package** | TO252 | Small TO252 package, suitable for high power density applications. |
| **Configuration** | Single N-channel | Suitable for low-side switch, providing good current conduction performance. |
| **Drain-source voltage (VDS)** | 650V | Maximum drain-source voltage is 650V, suitable for high voltage applications. |
| **Gate voltage (VGS)** | ±30V | Acceptable gate voltage range to ensure safe operation. |
| **Threshold voltage (Vth)** | 3.5V | Minimum gate voltage required for MOSFET to turn on. |
| **On-resistance (RDS(ON))** | 1000mΩ@VGS=10V | Relatively high on-resistance, suitable for low to medium current applications. |
| **Drain Current (ID)** | 5A | Maximum drain current is 5A, suitable for medium current applications. |
| **Technology** | SJ_Multi-EPI | Adopts SJ_Multi-EPI technology to optimize high voltage performance. |
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| Parameter | Value | Description|
|------------------|--------------------------------|-------------------------------------------|
| **Package** | TO252 | Small TO252 package, suitable for high power density applications. |
| **Configuration** | Single N-channel | Suitable for low-side switch, providing good current conduction performance. |
| **Drain-source voltage (VDS)** | 650V | Maximum drain-source voltage is 650V, suitable for high voltage applications. |
| **Gate voltage (VGS)** | ±30V | Acceptable gate voltage range to ensure safe operation. |
| **Threshold voltage (Vth)** | 3.5V | Minimum gate voltage required for MOSFET to turn on. |
| **On-resistance (RDS(ON))** | 1000mΩ@VGS=10V | Relatively high on-resistance, suitable for low to medium current applications. |
| **Drain Current (ID)** | 5A | Maximum drain current is 5A, suitable for medium current applications. |
| **Technology** | SJ_Multi-EPI | Adopts SJ_Multi-EPI technology to optimize high voltage performance. |
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Domain and module applications：
Application fields and module examples
1. **Switching Power Supply (SMPS)**
The high drain-source voltage (650V) and low on-resistance of the STD4N62K3-VB make it very suitable for switching power supplies (SMPS). In this application, the MOSFET can provide stable switching performance, reduce power loss, and improve efficiency, and is suitable for power modules such as AC-DC conversion and DC-DC conversion.
2. **Inverter**
In the inverter, the STD4N62K3-VB can be used to convert DC power to AC power, especially in solar inverters and other renewable energy systems. The high withstand voltage characteristics of this MOSFET enable it to withstand high voltage applications and achieve high efficiency during the conversion process.
3. **Power Management System**
In power management and battery management systems (BMS), the STD4N62K3-VB is suitable for power conversion and current regulation in high voltage environments. Its stable conduction performance and high voltage tolerance make it suitable for use in battery chargers, power distribution systems and other fields.
4. **Industrial control**
In industrial automation control systems, STD4N62K3-VB can be used for high-voltage applications such as driving motors and regulating power loads. It can efficiently switch high-power devices, reduce heat loss, and ensure stable operation of the system.
5. **Consumer electronics**
In consumer electronics, such as TVs and power tools, STD4N62K3-VB is also widely used, especially in occasions where these devices require high-voltage input and high-efficiency output. This MOSFET can effectively improve the operating efficiency of the product and reduce power consumption.
6. **Electric vehicle charger**
In the charger of electric vehicles, STD4N62K3-VB can efficiently handle voltage conversion and current regulation, especially in the charging process that needs to withstand high voltage. Its stable switching characteristics and low on-resistance can reduce energy loss during charging and improve charging efficiency.
In summary, the STD4N62K3-VB is suitable for multiple fields such as switching power supplies, inverters, power management, industrial control, consumer electronics and electric vehicle chargers. With its high voltage resistance, stable conduction performance and high current handling capability, it provides reliable solutions for various high voltage applications.
1. **Switching Power Supply (SMPS)**
The high drain-source voltage (650V) and low on-resistance of the STD4N62K3-VB make it very suitable for switching power supplies (SMPS). In this application, the MOSFET can provide stable switching performance, reduce power loss, and improve efficiency, and is suitable for power modules such as AC-DC conversion and DC-DC conversion.
2. **Inverter**
In the inverter, the STD4N62K3-VB can be used to convert DC power to AC power, especially in solar inverters and other renewable energy systems. The high withstand voltage characteristics of this MOSFET enable it to withstand high voltage applications and achieve high efficiency during the conversion process.
3. **Power Management System**
In power management and battery management systems (BMS), the STD4N62K3-VB is suitable for power conversion and current regulation in high voltage environments. Its stable conduction performance and high voltage tolerance make it suitable for use in battery chargers, power distribution systems and other fields.
4. **Industrial control**
In industrial automation control systems, STD4N62K3-VB can be used for high-voltage applications such as driving motors and regulating power loads. It can efficiently switch high-power devices, reduce heat loss, and ensure stable operation of the system.
5. **Consumer electronics**
In consumer electronics, such as TVs and power tools, STD4N62K3-VB is also widely used, especially in occasions where these devices require high-voltage input and high-efficiency output. This MOSFET can effectively improve the operating efficiency of the product and reduce power consumption.
6. **Electric vehicle charger**
In the charger of electric vehicles, STD4N62K3-VB can efficiently handle voltage conversion and current regulation, especially in the charging process that needs to withstand high voltage. Its stable switching characteristics and low on-resistance can reduce energy loss during charging and improve charging efficiency.
In summary, the STD4N62K3-VB is suitable for multiple fields such as switching power supplies, inverters, power management, industrial control, consumer electronics and electric vehicle chargers. With its high voltage resistance, stable conduction performance and high current handling capability, it provides reliable solutions for various high voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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