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STD419S-VB Product details

Product introduction:

STD419S-VB Product Introduction

STD419S-VB is a high-performance P-channel power MOSFET in TO-251 package with excellent current carrying capacity and low on-resistance. Its maximum drain-source voltage (VDS) is -40V and the gate-source voltage (VGS) range is ±20V, which is suitable for high-efficiency switching applications. The turn-on voltage (Vth) of this MOSFET is -2V, and it has a low RDS(ON) value (14mΩ@VGS=4.5V and 10mΩ@VGS=10V), ensuring low power loss during operation and improving the overall efficiency of the system. STD419S-VB has a maximum current carrying capacity of -55A and can provide large current control. It is widely used in power management, automotive electronics, LED drivers, inverters and other fields.

Using Trench technology, this MOSFET has low RDS(ON) and high switching performance, and can work in a variety of high-efficiency applications to meet stringent electrical performance requirements. Whether it is high current switching applications or medium and low voltage control systems, the STD419S-VB is a reliable and efficient choice.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO251 Single-P -40V -2V -55A 10mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO251 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO251 Single-P -40V -2V -55A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO251 Single-P -40V -2V -55A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO251 Single-P
STD419S-VB parameter details

| **Parameter name** | **Parameter value** | **Description** |
|---------------------|------------------------|-------------------------------------------------|
| **Package type** | TO-251 | Compact surface mount package, suitable for high-performance, space-demanding applications. |
| **Channel configuration** | Single P-channel | Suitable for negative voltage controlled switching applications, providing better current control. |
| **Drain-source voltage (VDS)** | -40V | Maximum voltage is -40V, suitable for medium voltage high-efficiency switching systems. |
| **Gate-source voltage (VGS)** | ±20V | Provides a wide gate voltage control range, suitable for a variety of drive circuits. |
| **Turning point voltage (Vth)** | -2V | Suitable for negative voltage controlled applications, ensuring fast response of MOSFET. |
| **On-resistance (RDS(ON))** | 14mΩ @ VGS=4.5V | Low on-resistance helps reduce power loss and improve conversion efficiency. |
| **On-resistance (RDS(ON))** | 10mΩ @ VGS=10V | Lower on-resistance improves switching efficiency and system performance. |
| **Maximum current (ID)** | -55A | Higher current carrying capacity for medium and high power applications. |
| **Technology** | Trench | Using Trench technology to provide low on-resistance and high switching performance. |

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Domain and module applications:

STD419S-VB application areas and module examples

1. **Power management system**
STD419S-VB is widely used in power management systems, especially modules such as power converters, power adapters, and DC-DC converters. In these applications, P-channel MOSFETs are used for load switching and current regulation, which can control current in a low-power loss manner to ensure stable system operation. The low on-resistance of this MOSFET ensures high efficiency of the power system and reduces heat generation.

2. **Power tools**
In the field of power tools, STD419S-VB is suitable for controlling electric motors and other high-current components. Due to its high current carrying capacity (-55A) and low on-resistance, it can reduce energy loss during power conversion and improve the working efficiency and service life of the tool. It is particularly suitable for battery management and motor drive modules in power tools.

3. **Automotive electronics**
STD419S-VB is also widely used in automotive electronics, especially in automotive power management systems, on-board chargers and battery management systems. P-channel MOSFET is suitable for negative voltage switching and power conversion, and can provide efficient current control and energy management to ensure the efficiency and reliability of automotive electronic systems.

4. **LED driver**
In LED driver modules, STD419S-VB can be used as a switching element to regulate current and maintain constant current output. Due to its high current capability and low on-resistance, it can effectively control the power supply of LED lamps, thereby improving energy efficiency and extending the life of the equipment.

5. **Inverter**
In inverter modules, STD419S-VB can efficiently convert DC to AC, especially for medium power inverter applications. Through its low on-resistance and high current carrying capacity, STD419S-VB provides an efficient switching solution for use in solar inverters, electric vehicle inverters and other systems.

6. **Battery Management System (BMS)**
In the battery management system, STD419S-VB can be used to accurately control the charging and discharging process of the battery. Through its efficient current switching capability, it can achieve fast and precise current regulation, help optimize battery efficiency, and improve the safety and reliability of the battery system.

In short, STD419S-VB is suitable for power management, automotive electronics, LED drivers, battery management, inverters and other fields due to its excellent current carrying capacity, low on-resistance and efficient switching performance, especially in high-power and high-efficiency switching applications. It shows great application potential.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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