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STD40NF02LT4-VB Product details
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Product Introduction: STD40NF02LT4-VB
STD40NF02LT4-VB is a single N-channel power MOSFET in TO252 package with a drain-source voltage (VDS) of 30V and a gate voltage (VGS) of ±20V. This product adopts Trench technology, has low on-resistance (RDS(ON)) and high conductivity, and can provide high-efficiency power conversion. Its on-resistance is 6mΩ (VGS=4.5V) and 5mΩ (VGS=10V), and the maximum drain current (ID) is 80A. STD40NF02LT4-VB is suitable for high-efficiency applications requiring low conduction loss and high switching frequency, and is widely used in automotive, industrial, power management and other fields.
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STD40NF02LT4-VB is a single N-channel power MOSFET in TO252 package with a drain-source voltage (VDS) of 30V and a gate voltage (VGS) of ±20V. This product adopts Trench technology, has low on-resistance (RDS(ON)) and high conductivity, and can provide high-efficiency power conversion. Its on-resistance is 6mΩ (VGS=4.5V) and 5mΩ (VGS=10V), and the maximum drain current (ID) is 80A. STD40NF02LT4-VB is suitable for high-efficiency applications requiring low conduction loss and high switching frequency, and is widely used in automotive, industrial, power management and other fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
| Parameter | Value | Description|
|------------------|--------------------------------|-------------------------------------------|
| **Package** | TO252 | Small TO252 package for compact applications. |
| **Configuration** | Single N-channel | N-channel configuration for low-side switch applications. |
| **Drain-Source Voltage (VDS)** | 30V | Maximum drain-source voltage for low to medium voltage applications. |
| **Gate Voltage (VGS)** | ±20V | Acceptable gate voltage range for safe operation. |
| **Threshold Voltage (Vth)** | 1.7V | Minimum gate voltage required for MOSFET to turn on. |
| **On-Resistance (RDS(ON))** | 6mΩ@VGS=4.5V, 5mΩ@VGS=10V | Low on-resistance for high efficiency and low power loss applications. |
| **Drain Current (ID)** | 80A | Maximum drain current, suitable for high current applications. |
| **Technology** | Trench | Using Trench technology to optimize switching performance and current conduction. |
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| Parameter | Value | Description|
|------------------|--------------------------------|-------------------------------------------|
| **Package** | TO252 | Small TO252 package for compact applications. |
| **Configuration** | Single N-channel | N-channel configuration for low-side switch applications. |
| **Drain-Source Voltage (VDS)** | 30V | Maximum drain-source voltage for low to medium voltage applications. |
| **Gate Voltage (VGS)** | ±20V | Acceptable gate voltage range for safe operation. |
| **Threshold Voltage (Vth)** | 1.7V | Minimum gate voltage required for MOSFET to turn on. |
| **On-Resistance (RDS(ON))** | 6mΩ@VGS=4.5V, 5mΩ@VGS=10V | Low on-resistance for high efficiency and low power loss applications. |
| **Drain Current (ID)** | 80A | Maximum drain current, suitable for high current applications. |
| **Technology** | Trench | Using Trench technology to optimize switching performance and current conduction. |
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Domain and module applications：
Application fields and module examples
1. **Automotive electronic systems**
The low on-resistance and high drain current carrying capacity of the STD40NF02LT4-VB make it ideal for automotive battery management systems (BMS) and power control modules for electric and hybrid vehicles. The MOSFET provides efficient power conversion and performs stably in environments requiring high current density.
2. **Power management systems**
Due to its excellent switching characteristics, the STD40NF02LT4-VB is widely used in power conversion systems, especially in high-efficiency power modules, DC-DC converters and inverters. Its low on-resistance helps reduce power losses and optimize energy efficiency, and performs well in power modules such as computer power supplies and communication equipment.
3. **Motor control**
The high current carrying capacity and low on-resistance of the STD40NF02LT4-VB make it an ideal choice for industrial motor control and power tool applications. It can efficiently drive high-power motors and is widely used in situations that require efficient power transmission and stable control.
4. **Power amplifier module**
In power amplifier modules, the STD40NF02LT4-VB can be used to improve the efficiency of power amplifiers. Its low RDS(ON) characteristics can reduce system losses and enhance power transmission, and is suitable for devices such as audio power amplifiers and RF amplifiers.
5. **Power tools and home appliance control**
This MOSFET is also very suitable for power tools and home appliances, especially in control modules that require higher current transmission. Its excellent conductivity and low on-resistance help improve the efficiency and service life of the equipment and reduce system power loss.
6. **Communication equipment**
In the communications industry, the STD40NF02LT4-VB can be used as a key component in signal amplifiers, power conversion power supplies, and other high-efficiency power management devices. Its low on-resistance helps improve conversion efficiency, especially in environments that require high-speed switching and lower losses.
In summary, the low on-resistance and high current capability of the STD40NF02LT4-VB make it suitable for multiple applications requiring high performance and high power density, such as automotive electronics, power management, motor control, power tools, home appliances and communication equipment.
1. **Automotive electronic systems**
The low on-resistance and high drain current carrying capacity of the STD40NF02LT4-VB make it ideal for automotive battery management systems (BMS) and power control modules for electric and hybrid vehicles. The MOSFET provides efficient power conversion and performs stably in environments requiring high current density.
2. **Power management systems**
Due to its excellent switching characteristics, the STD40NF02LT4-VB is widely used in power conversion systems, especially in high-efficiency power modules, DC-DC converters and inverters. Its low on-resistance helps reduce power losses and optimize energy efficiency, and performs well in power modules such as computer power supplies and communication equipment.
3. **Motor control**
The high current carrying capacity and low on-resistance of the STD40NF02LT4-VB make it an ideal choice for industrial motor control and power tool applications. It can efficiently drive high-power motors and is widely used in situations that require efficient power transmission and stable control.
4. **Power amplifier module**
In power amplifier modules, the STD40NF02LT4-VB can be used to improve the efficiency of power amplifiers. Its low RDS(ON) characteristics can reduce system losses and enhance power transmission, and is suitable for devices such as audio power amplifiers and RF amplifiers.
5. **Power tools and home appliance control**
This MOSFET is also very suitable for power tools and home appliances, especially in control modules that require higher current transmission. Its excellent conductivity and low on-resistance help improve the efficiency and service life of the equipment and reduce system power loss.
6. **Communication equipment**
In the communications industry, the STD40NF02LT4-VB can be used as a key component in signal amplifiers, power conversion power supplies, and other high-efficiency power management devices. Its low on-resistance helps improve conversion efficiency, especially in environments that require high-speed switching and lower losses.
In summary, the low on-resistance and high current capability of the STD40NF02LT4-VB make it suitable for multiple applications requiring high performance and high power density, such as automotive electronics, power management, motor control, power tools, home appliances and communication equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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