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STD3NK80Z-1-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
**STD3NK80Z-1-VB** is a high voltage N-channel power MOSFET in TO251 package, designed for 800V drain-source voltage (VDS). This product adopts **SJ_Multi-EPI** technology, with excellent switching performance and low on-resistance. Its gate voltage is up to ±30V, the turn-on voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 2600mΩ, and it supports up to 2A of drain current (ID) at VGS = 10V. This MOSFET is suitable for high-voltage power management, motor drive, inverter and other applications requiring high voltage and low current control.
Due to its excellent current control capability and high voltage withstand characteristics, STD3NK80Z-1-VB performs well in systems requiring high voltage protection and high-efficiency switching. It is widely used in power conversion equipment, inverters, home appliance control and other industrial and automotive electronic equipment.
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**STD3NK80Z-1-VB** is a high voltage N-channel power MOSFET in TO251 package, designed for 800V drain-source voltage (VDS). This product adopts **SJ_Multi-EPI** technology, with excellent switching performance and low on-resistance. Its gate voltage is up to ±30V, the turn-on voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 2600mΩ, and it supports up to 2A of drain current (ID) at VGS = 10V. This MOSFET is suitable for high-voltage power management, motor drive, inverter and other applications requiring high voltage and low current control.
Due to its excellent current control capability and high voltage withstand characteristics, STD3NK80Z-1-VB performs well in systems requiring high voltage protection and high-efficiency switching. It is widely used in power conversion equipment, inverters, home appliance control and other industrial and automotive electronic equipment.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 800V | 3.5V | 2A | 2600mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
II. Detailed parameter description
| **Parameter** | **Value** | **Description** |
|---------------------|------------------------------------|------------------------------------------------------|
| **Package type** | TO251 | TO251 package, suitable for medium power load and current handling. |
| **Configuration** | Single N-channel | Single channel N-channel configuration, suitable for efficient current control and switching applications. |
| **Drain-source voltage (VDS)** | 800V | Can withstand 800V drain-to-source voltage, suitable for high voltage load control. |
| **Gate voltage (VGS)** | ±30V | Supports a wide range of gate voltage control, adapting to a variety of power management solutions. |
| **Throw-on voltage (Vth)** | 3.5V | Moderate turn-on voltage, suitable for a wide range of control systems. |
| **On-resistance (RDS(ON))** | 2600mΩ @ VGS = 10V | Low on-resistance for high-efficiency power management and current control. |
| **Drain current (ID)** | 2A | Maximum drain current is 2A, suitable for low current load applications. |
| **Technology** | SJ_Multi-EPI | SJ_Multi-EPI technology provides lower on-resistance and higher switching performance. |
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| **Parameter** | **Value** | **Description** |
|---------------------|------------------------------------|------------------------------------------------------|
| **Package type** | TO251 | TO251 package, suitable for medium power load and current handling. |
| **Configuration** | Single N-channel | Single channel N-channel configuration, suitable for efficient current control and switching applications. |
| **Drain-source voltage (VDS)** | 800V | Can withstand 800V drain-to-source voltage, suitable for high voltage load control. |
| **Gate voltage (VGS)** | ±30V | Supports a wide range of gate voltage control, adapting to a variety of power management solutions. |
| **Throw-on voltage (Vth)** | 3.5V | Moderate turn-on voltage, suitable for a wide range of control systems. |
| **On-resistance (RDS(ON))** | 2600mΩ @ VGS = 10V | Low on-resistance for high-efficiency power management and current control. |
| **Drain current (ID)** | 2A | Maximum drain current is 2A, suitable for low current load applications. |
| **Technology** | SJ_Multi-EPI | SJ_Multi-EPI technology provides lower on-resistance and higher switching performance. |
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Domain and module applications：
3. Application fields and module examples
**STD3NK80Z-1-VB** As an N-channel high-voltage power MOSFET, it is suitable for applications that require high voltage, low current control and excellent switching performance. The following are some typical application scenarios:
1. **High-voltage power management**
- **Module**: Power converter, DC-DC converter
- In the power management system, STD3NK80Z-1-VB can be used as a switching element in the power converter to regulate the input and output of high voltage. Due to its high withstand voltage of 800V and low on-resistance, it is particularly suitable for high-efficiency DC-DC converters and other power management systems.
2. **Inverter system**
- **Module**: Solar inverter, power inverter
- In solar inverter and power inverter, STD3NK80Z-1-VB can be used as a power switch. Its high voltage handling capability and low on-resistance enable it to maintain high efficiency in high-power applications, thereby reducing energy loss and improving the overall efficiency of the system.
3. **Home appliance control system**
- **Module**: Home appliance power module, air conditioning control
- In home appliance control systems, STD3NK80Z-1-VB can be used for power switches of equipment such as air conditioners. This MOSFET has high voltage handling capabilities and good conduction characteristics, which can effectively control the flow of current and reduce the power loss of the system.
4. **Industrial power supply applications**
- **Module**: Industrial power module, industrial control system
- In industrial automation and control systems, STD3NK80Z-1-VB can be used as a power switch element to provide stable current control. Its high voltage tolerance characteristics make it particularly suitable for power regulation modules in industrial equipment and power systems.
5. **Automotive electronics**
- **Module**: On-board power supply, DC-AC converter
- In automotive electronics applications, STD3NK80Z-1-VB can be used as a key switching element in the on-board power supply system, applied to battery management, inverter and electric vehicle drive control system, providing efficient current regulation and energy conversion.
In summary, **STD3NK80Z-1-VB** is suitable for high voltage applications, especially in power management, motor drive, inverter system and industrial control. Its excellent current control capability and high voltage resistance make it perform well in various high-efficiency power conversion and high voltage regulation applications.
**STD3NK80Z-1-VB** As an N-channel high-voltage power MOSFET, it is suitable for applications that require high voltage, low current control and excellent switching performance. The following are some typical application scenarios:
1. **High-voltage power management**
- **Module**: Power converter, DC-DC converter
- In the power management system, STD3NK80Z-1-VB can be used as a switching element in the power converter to regulate the input and output of high voltage. Due to its high withstand voltage of 800V and low on-resistance, it is particularly suitable for high-efficiency DC-DC converters and other power management systems.
2. **Inverter system**
- **Module**: Solar inverter, power inverter
- In solar inverter and power inverter, STD3NK80Z-1-VB can be used as a power switch. Its high voltage handling capability and low on-resistance enable it to maintain high efficiency in high-power applications, thereby reducing energy loss and improving the overall efficiency of the system.
3. **Home appliance control system**
- **Module**: Home appliance power module, air conditioning control
- In home appliance control systems, STD3NK80Z-1-VB can be used for power switches of equipment such as air conditioners. This MOSFET has high voltage handling capabilities and good conduction characteristics, which can effectively control the flow of current and reduce the power loss of the system.
4. **Industrial power supply applications**
- **Module**: Industrial power module, industrial control system
- In industrial automation and control systems, STD3NK80Z-1-VB can be used as a power switch element to provide stable current control. Its high voltage tolerance characteristics make it particularly suitable for power regulation modules in industrial equipment and power systems.
5. **Automotive electronics**
- **Module**: On-board power supply, DC-AC converter
- In automotive electronics applications, STD3NK80Z-1-VB can be used as a key switching element in the on-board power supply system, applied to battery management, inverter and electric vehicle drive control system, providing efficient current regulation and energy conversion.
In summary, **STD3NK80Z-1-VB** is suitable for high voltage applications, especially in power management, motor drive, inverter system and industrial control. Its excellent current control capability and high voltage resistance make it perform well in various high-efficiency power conversion and high voltage regulation applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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