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STD30NF03L-VB Product details
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Product Introduction: STD30NF03L-VB
STD30NF03L-VB is a single N-channel power MOSFET in TO252 package with a drain-source voltage (VDS) of 30V and a gate voltage (VGS) of ±20V. This MOSFET uses advanced Trench technology and is designed for high-efficiency switching applications, especially under low voltage and high current conditions. Its on-resistance (RDS(ON)) is 9mΩ (VGS=4.5V) and 7mΩ (VGS=10V), which can provide low power loss and high current carrying capacity. The maximum drain current (ID) is 70A, making it suitable for various occasions requiring high current control. This MOSFET performs well in the field of low voltage and high efficiency, and is widely used in power management, motor control and other fields.
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STD30NF03L-VB is a single N-channel power MOSFET in TO252 package with a drain-source voltage (VDS) of 30V and a gate voltage (VGS) of ±20V. This MOSFET uses advanced Trench technology and is designed for high-efficiency switching applications, especially under low voltage and high current conditions. Its on-resistance (RDS(ON)) is 9mΩ (VGS=4.5V) and 7mΩ (VGS=10V), which can provide low power loss and high current carrying capacity. The maximum drain current (ID) is 70A, making it suitable for various occasions requiring high current control. This MOSFET performs well in the field of low voltage and high efficiency, and is widely used in power management, motor control and other fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
| Parameter | Value | Description|
|----------------|----------------------------|-------------------------------------------|
| **Package** | TO252 | Small TO252 package for high efficiency and space-constrained applications. |
| **Configuration** | Single N-channel | N-channel configuration for low-side switch applications. |
| **Drain-Source Voltage (VDS)** | 30V | Maximum drain-source voltage for low voltage applications. |
| **Gate Voltage (VGS)** | ±20V | Acceptable gate voltage range for safe operation. |
| **Threshold Voltage (Vth)** | 1.7V | Minimum gate voltage required for MOSFET to turn on. |
| **On-Resistance (RDS(ON))** | 9mΩ@VGS=4.5V, 7mΩ@VGS=10V | Low on-resistance for high efficiency and low power loss. |
| **Drain Current (ID)** | 70A | Maximum drain current, suitable for high current applications. |
| **Technology** | Trench | Using Trench technology, providing low on-resistance and efficient switching performance. |
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| Parameter | Value | Description|
|----------------|----------------------------|-------------------------------------------|
| **Package** | TO252 | Small TO252 package for high efficiency and space-constrained applications. |
| **Configuration** | Single N-channel | N-channel configuration for low-side switch applications. |
| **Drain-Source Voltage (VDS)** | 30V | Maximum drain-source voltage for low voltage applications. |
| **Gate Voltage (VGS)** | ±20V | Acceptable gate voltage range for safe operation. |
| **Threshold Voltage (Vth)** | 1.7V | Minimum gate voltage required for MOSFET to turn on. |
| **On-Resistance (RDS(ON))** | 9mΩ@VGS=4.5V, 7mΩ@VGS=10V | Low on-resistance for high efficiency and low power loss. |
| **Drain Current (ID)** | 70A | Maximum drain current, suitable for high current applications. |
| **Technology** | Trench | Using Trench technology, providing low on-resistance and efficient switching performance. |
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Domain and module applications：
Application fields and module examples
1. **Power management system**
STD30NF03L-VB is widely used in power management systems, especially for applications with low voltage power supplies and high current loads. Due to its low on-resistance, it can reduce energy losses and ensure higher efficiency in the power system. In DC-DC converters and battery management systems, this MOSFET is often used for efficient current regulation.
2. **Motor control applications**
Due to its high current carrying capacity (maximum 70A), STD30NF03L-VB is very suitable for motor drive and control systems, especially in low voltage motor drive modules. Its low on-resistance can effectively reduce power losses and improve the efficiency and stability of the drive system.
3. **LED drive circuit**
In LED drive circuits, STD30NF03L-VB can be used to regulate current and provide stable current control. Due to its excellent switching characteristics and high current capability, it can effectively manage current fluctuations and ensure long-term stable operation of LED lighting systems.
4. **Power Tools and Appliances**
The high current capability and low power loss of this MOSFET make it an ideal choice for power tools, household appliances and other high current consumption products. It can provide efficient power conversion to ensure the performance and service life of the equipment.
5. **Automotive Electronic Systems**
In automotive electronic systems, the STD30NF03L-VB can be used for battery management, power control and motor drive. Especially in automotive power systems that require high efficiency and high current transmission, MOSFET can effectively provide control and protection to ensure stable operation of the system.
The STD30NF03L-VB is suitable for many low-voltage, high-current applications, including power management, motor control, LED drive, and automotive electronics. Its low on-resistance and high current carrying capacity make it an indispensable core component in these systems.
1. **Power management system**
STD30NF03L-VB is widely used in power management systems, especially for applications with low voltage power supplies and high current loads. Due to its low on-resistance, it can reduce energy losses and ensure higher efficiency in the power system. In DC-DC converters and battery management systems, this MOSFET is often used for efficient current regulation.
2. **Motor control applications**
Due to its high current carrying capacity (maximum 70A), STD30NF03L-VB is very suitable for motor drive and control systems, especially in low voltage motor drive modules. Its low on-resistance can effectively reduce power losses and improve the efficiency and stability of the drive system.
3. **LED drive circuit**
In LED drive circuits, STD30NF03L-VB can be used to regulate current and provide stable current control. Due to its excellent switching characteristics and high current capability, it can effectively manage current fluctuations and ensure long-term stable operation of LED lighting systems.
4. **Power Tools and Appliances**
The high current capability and low power loss of this MOSFET make it an ideal choice for power tools, household appliances and other high current consumption products. It can provide efficient power conversion to ensure the performance and service life of the equipment.
5. **Automotive Electronic Systems**
In automotive electronic systems, the STD30NF03L-VB can be used for battery management, power control and motor drive. Especially in automotive power systems that require high efficiency and high current transmission, MOSFET can effectively provide control and protection to ensure stable operation of the system.
The STD30NF03L-VB is suitable for many low-voltage, high-current applications, including power management, motor control, LED drive, and automotive electronics. Its low on-resistance and high current carrying capacity make it an indispensable core component in these systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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