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STD3055L2-60-VB Product details

Product introduction:

STD3055L2-60-VB Product Introduction

STD3055L2-60-VB is a high-efficiency N-channel power MOSFET in TO-252 package with excellent switching performance and low on-resistance, designed for high-power applications. Its maximum drain-source voltage is 20V and the gate-source voltage range is ±20V, which is suitable for low-voltage, high-current power control systems. This MOSFET uses Trench technology to provide extremely low on-resistance (RDS(ON) is 6mΩ @ VGS=2.5V and 4.5mΩ @ VGS=4.5V) and can carry up to 100A of current. Its turn-on voltage (Vth) ranges from 0.5V to 1.5V, which is suitable for low-voltage and high-current applications, especially in battery-powered devices and power-intensive applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 20V 0.5~1.5V 100A 6mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 20V 0.5~1.5V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 20V 0.5~1.5V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
STD3055L2-60-VB Parameter Detailed Description

| **Parameter Name** | **Parameter Value** | **Description** |
|---------------------|------------------------|-------------------------------------------------|
| **Package Type** | TO-252 | Surface mount package with excellent heat dissipation and small size. |
| **Channel Configuration** | Single N-channel | Provides efficient switching characteristics for low voltage and high current applications. |
| **Drain-Source Voltage (VDS)** | 20V | Suitable for power control and conversion in low voltage systems. |
| **Gate-Source Voltage (VGS)** | ±20V | Provides a wide gate drive voltage range, suitable for a variety of drive circuits. |
| **Throw-On Voltage (Vth)** | 0.5~1.5V | The turn-on voltage range is low, suitable for low voltage applications. |
| **On-resistance (RDS(ON))** | 6mΩ @ VGS=2.5V, 4.5mΩ @ VGS=4.5V | Extremely low on-resistance ensures efficient power transmission. |
| **Maximum current (ID)** | 100A | High current capability for high-power power control systems. |
| **Technology** | Trench | Provides low power loss and efficient switching performance. |

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Domain and module applications:

STD3055L2-60-VB Applications and Module Examples

1. **Battery Management System (BMS)**
STD3055L2-60-VB is widely used in battery management systems (BMS), especially in high-current battery charging and discharging control. Its maximum current carrying capacity of 100A and low on-resistance characteristics make it very suitable for current monitoring, balancing and protection functions of battery packs to ensure safe and efficient operation of batteries.

2. **Switching Power Supply (SMPS)**
Due to its low on-resistance and high current carrying capacity, this MOSFET is widely used in switching power supplies (SMPS), especially in power conversion applications that require high efficiency. Its maximum drain-source voltage is 20V, which is suitable for low-voltage, high-power power management applications such as DC-DC converters and adapters.

3. **Power tool drive system**
In the drive system of power tools, the STD3055L2-60-VB can efficiently control the current flow of the motor to ensure stable operation of the power tool under high load. Its high current capability and low on-resistance characteristics help improve the efficiency of the system and reduce heat generation, making it suitable for use as a switching element in the power drive circuit of power tools.

4. **Electric vehicle (EV) charging system**
In the electric vehicle (EV) charging system, the STD3055L2-60-VB can efficiently control the flow of current as a switching element, especially in the charging process. The high current capability and low on-resistance can effectively improve the charging efficiency, extend the battery life, and reduce heat loss.

5. **Power amplifier (PA) module**
This MOSFET can also be used in RF power amplifier (PA) modules, especially in low voltage and high current applications. Its high current carrying capacity and low on-resistance can effectively reduce power loss and improve the overall efficiency of the amplifier.

6. **Automotive Electronic Power System**
In automotive electronic power systems, STD3055L2-60-VB is widely used to provide stable current control for on-board electronic devices. In high-power electrical systems, MOSFETs can be used to handle high current switches to ensure efficient operation of power systems in automotive applications.

With its high current capability and low on-resistance, STD3055L2-60-VB provides stable current control and efficient energy conversion in a variety of applications, making it very widely applicable in areas such as battery management, power systems, and drive control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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